CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING CODE: C3E SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE fT Ccb Crb rb’Cc SYMBOL VCBO VCEO VEBO PD TJ, Tstg ΘJA CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=25V VEB=2.0V IC=100µA IC=1.0mA IE=10µA IC=4.0mA, IB=0.4mA VCE=10V, IB=4.0mA VCE=10V, IC=4.0mA VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IC=4.0mA, f=31.8MHz otherwise noted) MIN 30 25 3.0 350 -65 to +150 357 MAX 100 100 UNITS V V V mW °C °C/W 0.50 0.95 UNITS nA nA V V V V V 0.70 0.65 9.0 MHz pF pF ps 30 25 3.0 60 650 R5 (3-February 2010) CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C3E R5 (3-February 2010) w w w. c e n t r a l s e m i . c o m