BTW67 and BTW69 Series ® 50A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT(RMS) 50 A VDRM/VRRM 600 to 1200 V IGT 80 mA G K K G DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities. Thanks to their internal ceramic pad, they provide high voltage insulation (2500VRMS), complying with UL standards (file ref: E81734). A K A G RD91 (BTW67) TOP3 Ins. (BTW69) Table 2: Order Codes Part Numbers Marking BTW67-xxx BTW67xxx BTW69-xxxRG BTW69xxx Table 3: Absolute Ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (180° conduction angle) RD91 Tc = 70°C TOP3 Ins. Tc = 75°C IT(AV) Average on-state current (180° conduction angle) RD91 Tc = 70°C TOP3 Ins. Tc = 75°C ITSM Non repetitive surge peak on-state current tp = 8.3 ms tp = 10 ms Tj = 25°C Value Unit 50 A 32 A 610 580 A I²t Value for fusing Tj = 25°C 1680 A2S dI/dt Critical rate of rise of on-state current IG = 2 F = 60 Hz x IGT , tr ≤ 100 ns Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 8 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C 5 V I ²t PG(AV) Tstg Tj VRGM Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage February 2006 REV. 5 1/6 BTW67 and BTW69 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol Test Conditions IGT Value RL = 33 Ω VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ IH IT = 500 mA Gate open IL IG = 1.2 x IGT Tj = 125°C Unit MIN. 8 MAX. 80 MAX. 1.3 V MIN. 0.2 V MAX. 150 mA MAX. 200 mA mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs VTM ITM = 100 A Tj = 25°C MAX. 1.9 V Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V Rd Dynamic resistance Tj = 125°C MAX. 8.5 mΩ 10 µA 5 mA Value Unit IDRM IRRM tp = 380 µs Tj = 25°C VDRM = VRRM MAX. Tj = 125°C Table 5: Thermal resistance Symbol Parameter Rth(j-c) Junction to case (D.C.) Rth(j-a) Junction to ambient (D.C.) Figure 1: Maximum average power dissipation versus average on-state current RD91 (Insulated) 1.0 TOP3 Insulated 0.9 TOP3 Insulated 50 °C/W Figure 2: Average and D.C. on-state current versus case temperature IT(AV)(A) P(W) 60 55 50 α = 180° D.C. 50 45 40 BTW69 BTW67 40 35 α = 180° 30 BTW69 30 25 20 20 15 BTW67 360° 10 10 5 IT(AV)(A) 0 5 10 15 Tcase(°C) α 0 2/6 °C/W 20 25 30 0 35 0 25 50 75 100 125 BTW67 and BTW69 Series Figure 3: Relative variation of impedance versus pulse duration thermal Figure 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] K=[Zth/Rth] 2.5 1E+0 Zth(j-c) 2.0 1E-1 1.5 Zth(j-a) BTW69 IGT 1.0 IH & IL 1E-2 0.5 Tj(°C) tp(s) 1E-3 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 5: Surge peak on-state current versus number of cycles -40 -20 0 20 40 60 80 100 120 140 Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t ITSM(A), I2t (A2s) ITSM(A) 600 5000 Tj initial = 25°C 550 500 ITSM tp=10ms 450 400 Non repetitive Tj initial=25°C 350 300 I2t One cycle 1000 Repetitive TC=75°C 250 200 150 dI/dt limitation 100 50 Number of cycles tp(ms) 0 1 10 100 1000 100 0.01 0.10 1.00 10.00 Figure 7: On-state characteristics (maximum values) ITM(A) 600 Tj max.: Vt0=1.0V Rd=8.5mΩ 100 Tj=max Tj=25°C 10 VTM(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/6 BTW67 and BTW69 Series Figure 8: Ordering Information Scheme BTW 69 - 600 RG Standard SCR series Type 67 = 50A in RD91 69 = 50A in TOP3 Voltage 600 = 600V 800 = 800V 1200 = 1200V Packing mode RG = Tube Blanck = Bulk Table 6: Product Selector Part Numbers Voltage (xxx) Sensitivity Package X 80 mA RD91 X 80 mA TOP3 Ins. 600 V 800 V 1200 V BTW67-xxx X X BTW69-xxx X X Figure 9: RD91 Package Mechanical Data A2 L2 REF. L1 B2 B1 C C2 C1 A1 N1 N2 B F E3 I A 4/6 A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 40.00 1.575 29.90 30.30 1.177 1.193 22.00 0.867 27.00 1.063 13.50 16.50 0.531 0.650 24.00 0.945 14.00 0.551 3.50 0.138 1.95 3.00 0.077 0.118 0.70 0.90 0.027 0.035 4.00 4.50 0.157 0.177 11.20 13.60 0.441 0.535 3.10 3.50 0.122 0.138 1.70 1.90 0.067 0.075 33° 43° 33° 43° 28° 38° 28° 38° BTW67 and BTW69 Series Figure 10: TOP3 Insulated Package Mechanical Data DIMENSIONS H REF. A Millimeters Min. R B ØL A K F P G C J D J E Typ. 4.4 Inches Max. Min. Typ. Max. 4.6 0.173 0.181 B 1.45 1.55 0.057 0.061 C 14.35 15.60 0.565 0.614 D 0.5 0.7 0.020 0.028 E 2.7 2.9 0.106 0.114 F 15.8 16.5 0.622 0.650 G 20.4 21.1 0.815 0.831 H 15.1 15.5 0.594 0.610 J 5.4 5.65 0.213 0.222 K 3.4 3.65 0.134 0.144 ØL 4.08 4.17 0.161 0.164 P 1.20 1.40 0.047 0.055 R 4.60 0.181 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 7: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTW67-xxx BTW67xxx RD91 20 g 25 Bulk BTW69-xxxRG BTW69xxx TOP3 Ins. 4.5 g 30 Tube Note: xxx = voltage Table 8: Revision History Date Revision Apr-2001 4A 13-Feb-2006 5 Description of Changes Last update. TOP3 Insulated delivery mode changed from bulk to tube. ECOPACK statement added. 5/6 BTW67 and BTW69 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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