MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE CM300DU-24F ¡IC ................................................................... 300A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 6 E2 G2 RTC 25 25 21.5 G1 E1 2.5 93 ±0.25 18 14 0.5 0.5 4 2.8 LABEL 0.5 0.5 4 7 7.5 18 14 8.5 7 21 18 14 29 +1.0 –0.5 80 15 C1 4-φ6.5 MOUNTING HOLES 3-M6 NUTS CIRCUIT DIAGRAM 18.25 E2 C1 RTC 6 G1 E1 C2E1 E2 C2E1 (18.5) (8.25) 62 ±0.25 CM E2 G2 110 Aug. 1999 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 300 600 300 600 960 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c’)Q RG Contact thermal resistance — — — — — — — — — — — — — — — — — — 1.0 — 1.8 1.9 — — — 3300 — — — — — 17.6 — — — 0.02 — — 40 2.4 — 120 5.1 3 — 300 80 500 300 250 — 3.2 0.13 0.18 — µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 300A, VGE = 15V Tj = 125°C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 600V, I C = 300A, VGE = 15V VCC = 600V, IC = 300A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied*2 (1/2 module) Tc measured point is just under the chips 0.065✽3 10 mA V nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 500 9 300 8.5 200 8 100 0 0.5 1 1.5 2 2.5 3 3.5 3 VGE = 15V Tj = 25°C 2.5 Tj = 125°C 2 1.5 1 0.5 0 4 0 200 400 600 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4 3 IC = 600A IC = 300A 2 IC = 120A 1 0 6 8 10 12 14 16 18 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 400 0 CAPACITANCE Cies, Coes, Cres (nF) 9.5 Tj = 25°C VGE = 20V 7 5 3 2 102 7 5 3 2 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 7 5 7 5 3 2 3 2 102 Cies 7 5 3 2 101 7 5 3 2 100 Tj = 25°C 101 0.5 20 Coes VGE = 0V Cres 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) 600 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) tf td(on) 102 7 5 3 2 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 125°C Inductive load tr 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE 103 7 5 3 2 Irr trr 102 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.13°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.15°C/ W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 300A 18 16 14 VCC = 400V 12 VCC = 600V 10 8 6 4 2 0 0 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Aug. 1999