Data Sheet Band Switching Diode DAN235E Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.7 1.6±0.2 0.3±0.1 0.05 Features 1)Ultra small mold type. (EMD3) 2)High reliability 0.15±0.05 (3) 1.6±0.2 0～0.1 0.6 0.1Min (1) (2) 0.6 EMD3 0.55±0.1 0.5 0.5 1.0±0.1 Construction Silicon epitaxial 0.7 0.7 0.8±0.1 0.2±0.1 -0.05 1.3 Applications High frequency switching 0.7±0.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.1 φ1.5 0.1 00 2.0±0.05 0.3±0.1 8.0±0.2 0～0.1 1.8±0.2 1.8±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ0.5±0.1 0.9±0.2 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Pd Reverse voltage (DC) VR Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage IR Limits Unit mW V °C °C 150 35 125 55 to 125 Min. - Typ. - Max. 1.0 Unit V - - 10 nA Reverse current Capacitance between terminals Ct - - 1.2 pF Forward resistance rf - - 0.9 Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=10mA VR=25V VR=6V , f=1MHz IF=2mA , f=100MHz 2011.06 - Rev.C Data Sheet DAN235E 100 100 10 Ta=75℃ 10 Ta=125℃ 1 Ta=25℃ 0.1 Ta=-25℃ Ta=75℃ 1 0.1 Ta=25℃ 0.01 Ta=-25℃ 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 840 830 AVE:834.0mV 820 810 0.16 0.14 0.12 0.1 0.08 AVE:0.0285nA 0.06 0.04 10 AVE:4.60A 5 0.3 0.2 1 Ta=25℃ IF=0.1A IR=0.1A RL=100Ω Irr=0.1*IR n=10pcs 80 60 20 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.6 0.5 100 AVE:0.630Ω 0.4 0.3 0.2 0 FORWARD CURRENT:IF(mA) rf DISPERSION MAP 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 10 Rth(j-a) 100 1 Ifsm t 0.1 0.1 10 0.7 trr DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 0.8 0.1 100 Ifsm Ta=25℃ f=100MHz IF=2mA n=10pcs 0.9 AVE:64.7ns 40 IFSM DISPERSION MAP 1 AVE:0.865pF Ta=25℃ VR=6V f=1MHz n=10pcs Ct DISPERSION MAP 0 10 30 0.4 0 0 100 25 0.5 0.1 FORWARD OPERATING RESISTANCE:rf(Ω) 8.3ms 20 0.6 0 REVERSE RECOVERY TIME:trr(ns) Ifsm 1 0.7 0.02 100 1cyc 15 0.8 IR DISPERSION MAP 20 10 0.9 Ta=25℃ VR=25V n=30pcs VF DISPERSION MAP 15 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 0 35 1 0.18 Ta=25℃ IF=10mA n=30pcs 850 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0.2 860 1 0.1 0.0001 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=125℃ 10 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 2/3 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 300us 1 0.001 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 2011.06 - Rev.C Data Sheet DAN235E ELECTROSTATIC DDISCHARGE TEST ESD(KV) 10 9 AVE:7.02kV 8 7 6 5 4 3 AVE:1.06kV 2 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A