Rohm DAN235E Band switching diode Datasheet

Data Sheet
Band Switching Diode
DAN235E
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
1.6±0.2
0.3±0.1
0.05
Features
1)Ultra small mold type. (EMD3)
2)High reliability
0.15±0.05
(3)
1.6±0.2
0~0.1
0.6
0.1Min
(1)
(2)
0.6
EMD3
0.55±0.1
0.5
0.5
1.0±0.1
Construction
Silicon epitaxial
0.7
0.7
0.8±0.1
0.2±0.1
-0.05
1.3
Applications
High frequency switching
0.7±0.1
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.1
φ1.5 0.1
00
2.0±0.05
0.3±0.1
8.0±0.2
0~0.1
1.8±0.2
1.8±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Reverse voltage (DC)
VR
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Limits
Unit
mW
V
°C
°C
150
35
125
55 to 125
Min.
-
Typ.
-
Max.
1.0
Unit
V
-
-
10
nA
Reverse current
Capacitance between terminals
Ct
-
-
1.2
pF
Forward resistance
rf
-
-
0.9
Ω
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Conditions
IF=10mA
VR=25V
VR=6V , f=1MHz
IF=2mA , f=100MHz
2011.06 - Rev.C
Data Sheet
DAN235E
100
100
10
Ta=75℃
10
Ta=125℃
1
Ta=25℃
0.1
Ta=-25℃
Ta=75℃
1
0.1
Ta=25℃
0.01
Ta=-25℃
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
0
5
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
840
830
AVE:834.0mV
820
810
0.16
0.14
0.12
0.1
0.08
AVE:0.0285nA
0.06
0.04
10
AVE:4.60A
5
0.3
0.2
1
Ta=25℃
IF=0.1A
IR=0.1A
RL=100Ω
Irr=0.1*IR
n=10pcs
80
60
20
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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0.6
0.5
100
AVE:0.630Ω
0.4
0.3
0.2
0
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
10
Rth(j-a)
100
1
Ifsm
t
0.1
0.1
10
0.7
trr DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms 8.3ms
1cyc
0.8
0.1
100
Ifsm
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
0.9
AVE:64.7ns
40
IFSM DISPERSION MAP
1
AVE:0.865pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
Ct DISPERSION MAP
0
10
30
0.4
0
0
100
25
0.5
0.1
FORWARD OPERATING
RESISTANCE:rf(Ω)
8.3ms
20
0.6
0
REVERSE RECOVERY TIME:trr(ns)
Ifsm
1
0.7
0.02
100
1cyc
15
0.8
IR DISPERSION MAP
20
10
0.9
Ta=25℃
VR=25V
n=30pcs
VF DISPERSION MAP
15
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
0
35
1
0.18
Ta=25℃
IF=10mA
n=30pcs
850
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0.2
860
1
0.1
0.0001
0.01
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Ta=125℃
10
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
2/3
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
10
1ms
time
300us
1
0.001
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
2011.06 - Rev.C
Data Sheet
DAN235E
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
10
9
AVE:7.02kV
8
7
6
5
4
3
AVE:1.06kV
2
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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3/3
2011.06 - Rev.C
Notice
Notes
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R1120A
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