MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
CM600DU-12NFH
- 5th generation Fast switching IGBT module -
Collector current IC .............…............…
600A
Collector-emitter voltage VCES ...........…
600V
Maximum junction temperature T jmax ...
1 5 0 °C
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
Dual (Half-Bridge)
APPLICATION
High freqency (30 kHz ~ 60 kHz) switching use:
Gradient anplifier, Induction heating, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
E2 G2
INTERNAL CONNECTION
Tolerance otherwise specified
3
Tolerance
0.5
to
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
Di1
±0.2
Tr2
C2E1
Di2
1
E2
Tr1
C1
G1 E1
Division of Dimension
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
Item
G-E short-circuited
Conditions
600
V
VGES
Gate-emitter voltage
C-E short-circuited
±20
V
IC
Operation
Collector current
IC(rms)
ICRM
TC=25 °C
Total power dissipation
A
400
Pulse, Repetitive
Ptot
600
(Note.5)
(Note.4)
1200
(Note.2, 5)
1130
W
TC'=25 °C
(Note.3, 5)
Emitter current
(Free wheeling diode forward current)
Operation
(Note.5)
Tj
Junction temperature
-
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Ptot'
2350
(Note.1)
IE
IE(rms)
(Note.1)
(Note.1)
IERM
600
A
400
Pulse, Repetitive
(Note.4)
1200
2500
°C
V
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1
mA
IGES
Gate-emitter leakage current
±VGE=VGES, C-E short-circuited
-
-
0.5
μA
VGE(th)
Gate-emitter threshold voltage
IC=60 mA, VCE=10 V
5
6
7
V
T j =25 °C
-
2.0
2.7
T j =125 °C
-
1.95
-
-
-
166
-
-
11
-
-
6.0
-
3720
-
-
-
650
VCEsat
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
IC=600 A
VCE=10 V, G-E short-circuited
VCC=300 V, IC=600 A, VGE=15 V
VCC=300 V, IC=600 A, VGE=±15 V,
RG=2.0 Ω, Inductive load
150
ns
-
2.6
V
VCC=300 V, IE=600 A, VGE=±15 V,
-
-
200
ns
Reverse recovery charge
RG=2.0 Ω, Inductive load
-
11
-
μC
Turn-on switching energy per pulse
VCC=300 V, IC=IE=600 A,
-
11
-
trr
(Note.1)
Reverse recovery time
Qrr
(Note.1)
rg
250
800
nC
2.0
IE=600 A
(Note.1)
-
nF
-
Emitter-collector voltage
Err
-
V
-
Fall time
(Note.1)
Eoff
,
VGE=15 V
VEC
Eon
(Note.6)
(Note.6)
, G-E short-circuited
Turn-off switching energy per pulse
VGE=±15 V, RG=2.0 Ω, T j =125 °C,
-
27
-
Reverse recovery energy per pulse
Inductive load
-
6.3
-
Internal gate resistance
Per switch, TC=25 °C
-
0.8
-
mJ
Ω
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Rth(j-c')Q
Rth(j-c')D
Item
Thermal resistance
(Note.2)
Contact thermal resistance
Thermal resistance
Limits
Conditions
(Note.2)
(Note.3)
Min.
Typ.
Max.
Unit
Junction to case, per IGBT
-
-
0.11
K/W
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
(Note.7)
Thermal grease applied
Junction to case, per IGBT
-
-
0.12
K/W
-
0.02
-
K/W
-
-
53
K/kW
Junction to case, per FWDi
-
-
78
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Item
Mounting torque
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
-
580
-
g
-100
-
+100
μm
m
Weight
-
ec
Flatness of base plate
On the centerline X, Y
2
(Note.8)
N·m
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS (T a =25 °C)
Symbol
Item
Conditions
Limits
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2
-
300
400
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
13.5
15.0
16.5
RG
External gate resistance
Per switch
1.0
-
10
Unit
V
Ω
-:Concave
+:Convex
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (TC) measured point is base plate side. (Refer to the figure of chip location)
Note.3: Case temperature (T C ' ) and heat sink temperature (T s ') are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R t h ( s - a ) } should measure just under the chips.
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
Note.5: Junction temperature (T j ) should not increase beyond T j m a x rating.
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
bottom
X
3 mm
Y
bottom
-:Concave
bottom
+:Convex
Note.9: No short circuit capability is designed.
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Case Temperature (TC)
measurement point
(Base plate side)
Tr1/Tr2: IGBT, Di1/Di2: FWDi
3
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
C1
C1
VGE=15 V
G1
V
V
Es1
V
C2E1
C2E1
G1
IE
G1
Es1
VGE=15 V
Shortcircuited
Shortcircuited
Shortcircuited
G1
IC
C1
C1
Shortcircuited
G2
C2E1
Shortcircuited
C2E1
Shortcircuited
IC
V
Es1
Es1
IE
G2
G2
G2
E2
Es2
Es2
Tr1
Tr2
E2
Di1
Di2
V C E s a t test circuit
VEC test circuit
〜
vGE
iE
90 %
0V
iE
0
Q r r =0.5×I r r ×t r r
t
Load
trr
IE
+
VCC
iC
0A
〜
-V GE
E2
Es2
Es2
E2
t
90 %
+V GE
RG
vGE
0V
Irr
vCE
iC
-V GE
10%
0A
tf
tr
t d (o n )
t d( o ff)
t
t r r , Q r r test waveform
Switching characteristics test circuit and waveforms
iE
vCE
0
iC
iC
ICM
VCC
0.1×ICM
0.1×VCC
0.5×I r r
ICM
VCC
t
0
0.1×VCC
IEM
vEC
vCE
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0A
t
0V
t
ti
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
4
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
13 V 11 V 10 V 9.5 V
1200
3
VGE=20 V
2.5
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
IC (A)
8.5
15 V
1000
COLLECTOR CURRENT
9 V
800
8 V
600
7.5
400
200
7 V
0
T j =125 °C
2
1.5
T j =25 °C
1
0.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
5
0
200
VCE (V)
400
600
800
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
1000
1200
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T j =25 °C
G-E short-circuited , T j =25 °C
5
10000
4
3.5
IE (A)
IC=1200 A
IC=600 A
3
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
4.5
IC=240 A
2.5
2
1.5
1000
T j =125 °C
T j =25 °C
100
1
0.5
0
10
0
5
10
GATE-EMITTER VOLTAGE
15
20
0
VGE (V)
0.5
1
1.5
2
2.5
EMITTER-COLLECTOR VOLTAGE
5
3
VEC (V)
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω,
T j =125 °C, INDUCTIVE LOAD
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC=600 A, VGE=±15 V,
T j =125 °C, INDUCTIVE LOAD
1000
10000
td(off)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
td(on)
100
tf
tr
td(off)
1000
td(on)
tr
tf
10
100
10
100
COLLECTOR CURRENT
1000
0.1
IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
10
RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=300 V, IC/IE=600 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
100
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
EXTERNAL GATE RESISTANCE
Eoff
Eon
10
Err
1
Eoff
10
Err
Eon
1
10
100
1000
0.1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
1
EXTERNAL GATE RESISTANCE
6
10
RG (Ω)
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=300 V, VGE=±15 V, RG=2.0 Ω,
T j =25 °C, INDUCTIVE LOAD
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
1000
1000
CAPACITANCE (nF)
Cies
t r r (ns), I r r (A)
Irr
100
trr
100
10
Coes
Cres
10
1
10
100
0.1
1000
EMITTER CURRENT
IE (A)
1
IC=600 A, T j =25 °C
Single pulse, TC'=25°C
20
Zth(j-c')
1
16
NORMALIZED TRANSIENT THERMAL IMPEDANCE
18
VGE (V)
100
VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE
10
COLLECTOR-EMITTER VOLTAGE
VCC=200 V
14
VCC=300 V
12
10
8
6
4
2
0
0
1000
2000
GATE CHARGE
3000
4000
5000
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
R t h ( j - c ' ) Q =53 K/kW, R t h ( j - c ' ) D =78 K/kW
TIME (S)
QG (nC)
7
February-2011
MITSUBISHI IGBT MODULES
CM600DU-12NFH
HIGH POWER SWITCHING USE
INSULATED TYPE
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·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is
always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property
damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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8
February-2011