A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.6A • Low on-resistance • Fast switching speed • Low gate drive • “Green” component and RoHS compliant (Note 1) 30V Mechanical Data Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Case: TO-252 (DPAK) • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Backlighting • DC-DC Converters • Marking Information: See Below • Power management functions • Ordering Information: See Below • Weight: 0.33 grams (approximate) D D G D G TOP VIEW Ordering Information Product DMN3024LK3-13 Note: S S PIN OUT -TOP VIEW Equivalent Circuit (Note 1) Marking N3024L Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information YYWW N3024L DMN3024LK3 Document Revision: 1 = Manufacturer’s Marking N3024L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 3) TA=70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) ID IDM IS ISM Value 30 ±20 14.4 12.0 9.78 46.5 12 46.5 Unit V V Value 4.1 32.5 8.9 71.4 2.17 17.4 30.8 14.0 57.6 2.24 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 2) Power dissipation Linear derating factor (Note 3) PD (Note 5) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: (Note 2) (Note 3) (Note 5) (Note 6) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). DMN3024LK3 Document Revision: 1 2 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Thermal Characteristics RDS(on) 10 Limit ID Drain Current (A) ID Drain Current (A) RDS(on) DC 1 1s 100ms 100m 1ms 25mm x 25mm 1oz FR4 10m 100m DC 1 1s 100ms 100m 10ms T amb=25°C Limit 10 100µs 1 10 10ms T amb=25°C 1ms 50mm x 50mm 2oz FR4 10m 0.1 100µs 1 VDS Drain-Source Voltage (V) 10 VDS Drain-Source Voltage (V) Safe Operating Area Safe Operating Area T amb=25°C 50 25mm x 25mm 1oz FR4 40 D=0.5 30 20 D=0.1 D=0.2 D=0.05 10 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Thermal Resistance (°C/W) Thermal Resistance (°C/W) 35 60 Transient Thermal Impedance T amb=25°C 30 50mm x 50mm 2oz FR4 25 20 D=0.5 15 D=0.1 D=0.2 10 D=0.05 5 Single Pulse 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 50mm x 50mm 2oz FR4 10 25mm x 25mm 1oz FR4 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Max Power Dissipation (W) 4.5 Single Pulse T amb=25°C 100 4.0 50mm x 50mm 2oz FR4 3.5 3.0 25mm x 25mm 1oz FR4 2.5 2.0 1.5 1.0 0.5 0.0 0 Pulse Power Dissipation DMN3024LK3 Document Revision: 1 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 3 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 30V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.024 VGS= 10V, ID= 7.0A RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 7 & 8) gfs ⎯ 16.5 ⎯ S VDS= 15V, ID= 7.0A Diode Forward Voltage (Note 7) VSD ⎯ 0.82 1.2 V IS= 1.7A, VGS= 0V Reverse recovery time (Note 8) trr 12 ⎯ ns Reverse recovery charge (Note 8) Qrr ⎯ 4.8 ⎯ nC Input Capacitance Ciss ⎯ 608 ⎯ pF Output Capacitance Coss ⎯ 132 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 71 ⎯ pF Total Gate Charge Qg ⎯ 12.9 ⎯ nC Gate-Source Charge Qgs ⎯ 2.5 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.5 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.9 ⎯ ns Turn-On Rise Time (Note 9) tr ⎯ 3.3 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 16 ⎯ ns tf ⎯ 8 ⎯ ns Static Drain-Source On-Resistance (Note 7) 0.039 Ω VGS= 4.5V, ID= 6.0A IS= 2.2A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time (Note 9) Notes: VDS= 15V, VGS= 0V f= 1MHz VDS= 15V, VGS= 10V ID= 7A VDD= 15V, VGS= 10V ID= 1A, RG ≅ 6.0Ω 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. DMN3024LK3 Document Revision: 1 4 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Typical Characteristics 5V ID Drain Current (A) T = 150°C 4V 3.5V 3V 1 0.1 2.5V VGS T = 25°C 10V VGS 4V 3.5V 10 ID Drain Current (A) 10V 10 3V 2.5V 1 2V 0.1 1.5V 0.01 0.01 0.1 1 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics ID Drain Current (A) VDS = 10V T = 150°C 1 T = 25°C 0.1 2 3 4 VGS Gate-Source Voltage (V) DMN3024LK3 Document Revision: 1 1000 2.5V VGS T = 25°C 100 3V 10 3.5V 1 4V 0.1 0.01 0.01 4.5V 10V 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current VGS = 10V 1.4 ID = 7A RDS(on) 1.2 1.0 0.8 VGS(th) VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (W) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) 1.6 10 10 1 T = 150°C 0.1 T = 25°C 0.01 Vgs = -3V 1E-3 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Typical Characteristics - continued VGS = 0V C Capacitance (pF) 800 f = 1MHz 700 600 CISS 500 COSS 400 CRSS 300 200 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 900 10 9 8 7 6 5 4 3 2 1 0 ID = 7A VDS = 15V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms DMN3024LK3 Document Revision: 1 Switching time test circuit 6 of 8 www.diodes.com June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Package Outline Dimensions DIM Inches Millimeters DIM Inches Min Max Min Max A 0.086 0.094 2.18 2.39 e A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016 D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52 D1 0.205 - 5.21 - θ1° 0° 10° 0° 10° E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15° E1 0.170 - 4.32 - - - - - - DMN3024LK3 Document Revision: 1 Min Millimeters 7 of 8 www.diodes.com Max Min 0.090 BSC Max 2.29 BSC June 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3024LK3 Suggested Pad Layout 6.2 0.244 3.0 0.118 5.8 0.228 1.6 0.063 2.58 0.101 6.17 0.243 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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