FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –8 A, –30 V Applications • High performance trench technology for extremely low RDS(ON) RDS(ON) = 13.5 mΩ @ V GS = –10 V RDS(ON) = 20 mΩ @ V GS = –4.5 V • Extended V GSS range (±25V) for battery applications • Battery protection • Low profile TSSOP-8 package • DC/DC conversion • Power management • Load switch D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage –30 V V GSS Gate-Source Voltage ± 25 V ID Drain Current (Note 1) –8 A PD – Pulsed Power Dissipation (Note 1a) –50 1.3 W (Note 1b) 0.6 TJ , TSTG Parameter – Continuous –55 to +150 °C (Note 1a) 96 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 256P FDW256P 13’’ 16mm 2500 units 2008 Fairc hild Semiconductor Corporation FDW256P Rev C1(W) FDW256P July 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –24 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 25 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –25 V, V DS = 0 V –100 nA –3 V On Characteristics –30 ID = –250 µA, Referenced to 25°C V –23 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –8.0 A 30 S V DS = –15 V, f = 1.0 MHz V GS = 0 V, 2267 pF 599 pF 315 pF –1 –1.7 5 V GS = –10 V, ID = –8.0 A V GS = –4.5 V, ID = –6.5 A V GS =–10 V, ID =–8.0A, TJ =125°C 11 16 15 mV/°C 13.5 20 19 –50 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –15 V, V GS = –10 V, 15 27 ns 11 35 ns Turn–Off Delay Time 78 125 ns tf Turn–Off Fall Time 45 72 ns Qg Total Gate Charge 28 38 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –15 V, V GS = –5.0V ID = –1 A, RGEN = 6 Ω ID = –8.0 A, 7 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –1.2 A Voltage (Note 2) –0.7 –1.2 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 96 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW256P Rev C1(W) FDW256P Electrical Characteristics FDW256P Typical Characteristics 50 -6.0V 2.2 -4.5V -4.0V -3.5V 40 -I D, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V 30 -3.0V 20 10 2 VGS = -3.5V 1.8 1.6 -4.0V -4.5V 1.4 -5.0V -6.0V 1.2 -10V 1 0 0 0.5 1 1.5 2 2.5 0.8 3 0 -V DS , DRAIN TO SOURCE VOLTAGE (V) 30 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.05 ID = -8A V GS = -10V RDS(ON), ON-RESISTANCE (OHM) ID = -4.0A 1.4 1.2 1 0.8 0.6 0.04 0.03 TA = 125o C 0.02 T A = 25o C 0.01 0 -50 -25 0 25 50 75 100 125 150 2 4 TJ , JUNCTION TEMPERATURE (oC) 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 T A = -55o C 25oC -I S, REVERSE DRAIN CURRENT (A) V DS = -5.0V 40 -ID, DRAIN CURRENT (A) 20 -I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 125o C 30 20 10 0 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55 oC 0.01 0.001 0.0001 1 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW256P Rev C1(W) FDW256P Typical Characteristics 4000 V DS = -10V ID = -8A f = 1 MHz V GS = 0 V -15V 8 3200 -20V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 CISS 2400 1600 COSS 2 800 0 0 CRSS 0 10 20 30 40 50 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 50 RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 1ms -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 10ms 100ms 1s 10s 1 DC V GS = -10V SINGLE PULSE Rθ JA = 208o C/W 0.1 T A = 25o C 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 -V DS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA o RθJA = 208 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW256P Rev C1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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