isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT42F/AF/BF/CF DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF ·Complement to Type BDT41F/AF/BF/CF APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT42F -80 BDT42AF -100 BDT42BF -120 BDT42CF -140 BDT42F -40 BDT42AF -60 BDT42BF -80 BDT42CF -100 Collector-Base Voltage Collector-Emitter Voltage UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current -3 A PC Collector Power Dissipation TC=25℃ 32 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.3 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT42F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT42F VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT -40 BDT42AF -60 IC= -30mA; IB= 0 V BDT42BF -80 BDT42CF -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.4 mA ICEO Collector Cutoff Current -0.2 mA -0.5 mA B BDT42F/AF VCE= -30V; IB= 0 BDT42BF/CF VCE= -60V; IB= 0 B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 15 Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 3 fT 75 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.6 μs 1.0 μs IC= -6A; IB1= -IB2= -0.6A isc Website：www.iscsemi.cn