PHILIPS BYQ30EX-150 Rectifier diodes ultrafast, rugged Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYQ30EX series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.95 V
a2
3
a1
1
IO(AV) = 16 A
IRRM ≤ 0.2 A
k 2
trr ≤ 25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYQ30EX series is supplied in
the conventional leaded SOT186A
package.
PINNING
PIN
SOT186A
DESCRIPTION
case
1
anode 1
2
cathode
3
anode 2
tab
isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
IO(AV)
Average rectified output current
(both diodes conducting)1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
-
16
A
-
16
A
-
100
110
A
A
-
0.2
A
-
0.2
A
-40
-
150
150
˚C
˚C
BYQ30EX
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
square wave
δ = 0.5; Ths ≤ 59 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 59 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
tp = 100 µs
current per diode
Storage temperature
Operating junction temperature
MAX.
-150
150
150
150
UNIT
-200
200
200
200
V
V
V
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
55
5.0
7.0
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.83
1.0
0.98
0.3
2
4
20
0.95
1.15
1.25
0.6
30
11
25
V
V
mA
µA
nC
ns
-
1.0
2
A
-
1
-
V
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
with heatsink compound
without heatsink compound
in free air
Rth j-a
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
trr
Reverse recovery charge
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 16 A; Tj = 150˚C
IF = 16 A;
VR = VRWM; Tj = 100 ˚C
VR = VRWM
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs; Tj = 100 ˚C
IF = 1 A; dIF/dt = 10 A/µs
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYQ30EX series
12
F
dt
I
R
rr
100
1.9
8
6
120
4
4
130
2
140
100%
10%
s
110
2.2
2.8
0
rrm
Fig.1. Definition of trr, Qs and Irrm
I
90
a = 1.57
time
Q
Ths(max) / C
Vo = 0.75 V
Rs 0.025 Ohms
10
t
I
Forward dissipation, PF (W) BYQ30
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
Fig.4. Maximum forward dissipation PF = f(IF(AV))per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
trr / ns
F
1000
IF=10A
100
time
IF=1A
VF
10
V
fr
VF
1
1
10
dIF/dt (A/us)
time
Fig.2. Definition of Vfr
12
10
Fig.5. Maximum trr at Tj = 25 ˚C.
Forward dissipation, PF (W) BYQ30
Ths(max) / C
D = 1.0
Vo = 0.75 V
Rs = 0.025 Ohms
110
0.2
0.1
6
tp
D=
2
0
2
4
6
8
Average forward current, IF(AV) (A)
tp
T
t
T
0
IF=1A
10
130
10
140
150
12
1
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
October 1998
IF=10A
100
120
I
4
trr / ns
1000
80
90
0.5
8
100
1
10
dIF/dt (A/us)
100
Fig.6. Maximum trr at Tj = 100 ˚C.
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
10
BYQ30EX series
Irrm / A
100 Qs / nC
IF=10A
5A
2A
1A
IF=10A
1
IF=1A
10
0.1
1.0
0.01
10
-dIF/dt (A/us)
1
100
1.0
Fig.7. Maximum Irrm at Tj = 25 ˚C.
10
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
IF=10A
Transient thermal impedance, Zth j-hs (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
0.001
1us
0.01
10
-dIF/dt (A/us)
1
100
Fig.8. Maximum Irrm at Tj = 100 ˚C.
20
Forward current, IF (A)
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYQ30EX
Fig.11. Transient thermal impedance; Zth j-hs = f(tp).
BYQ30
Tj = 25 C
Tj = 150 C
15
10
typ
max
5
0
0
0.5
1
1.5
Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
6
Rev 1.200
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