BC 856W ... BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 2 PNP 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 856W BC 857W BC 860W BC 858W BC 859W Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V Collector-Base-voltage E open - VCB0 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 200 mW 1) Collector current – Kollektorstrom (DC) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 2 DC current gain – Kollektor-Basis-Stromverhältnis ) - VCE = 5 V, - IC = 10 :A hFE typ. 90 typ. 150 typ. 270 - VCE = 5 V, - IC = 2 mA hFE 110...220 200...450 420...800 typ. 220 typ. 330 typ. 600 h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz Small signal current gain – Stromverstärkung hfe 1 Input impedance – Eingangs-Impedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance – Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 16 01.11.2003 General Purpose Transistors BC 856W ... BC 860W Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA -VCEsat – 75 mV 300 mV - IC = 100 mA, - IB = 5 mA -VCEsat – 250 mV 600 mV Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 10 mA, - IB = 0.5 mA - VBEsat – 700 mV – - IC = 100 mA, - IB = 5 mA - VBEsat – 850 mV – - VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV - VCE = 5 V, - IC = 10 mA - VBEon – – 820 mV IE = 0, - VCB = 30 V - ICB0 – – 15 nA IE = 0, - VCB = 30 V, Tj = 150/C - ICB0 – – 4 :A - IEB0 – – 100 nA 100 MHz – – – 10 pF 12 pF BC 856W... F BC 858W – – 10 dB BC 859W... BC860W – – 4 dB Base-Emitter voltage – Basis-Emitter-Spannung 1) Collector-Base cutoff current – Kollektorreststrom Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz - VCE = 5 V, - IC = 200 :A RG = 2 kS, f = 30...15 kHz BC 859W F – – 4 dB BC 860W F – – 4 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstärkungsgruppen pro Typ 620 K/W 2) RthA BC 846W ... BC 850W BC 856AW = 3A BC 856BW = 3B BC 857AW = 3E BC 857BW = 3F BC 857CW = 3G BC 858AW = 3J BC 858BW = 3K BC 858CW = 3L BC 859BW = 4B BC 859CW = 4C BC 860BW = 4F BC 860CW = 4G ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 17