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FDD86367 N-Channel PowerTrench® MOSFET www.onsemi.com FDD86367 N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ Features Typical RDS(on) = 3.3 mΩ at VGS = 10V, ID = 80 A D Typical Qg(tot) = 68 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D G Applications PowerTrain Management G S Solenoid and Motor Drivers D-PAK TO-252 (TO-252) Integrated Starter/Alternator S Primary Switch for 12V Systems For current package drawing, please refer to the website at http://www.fairchildsemi.com/package‐drawings/TO/ TO252A03.pdf. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 100 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 82 A mJ Power Dissipation 227 W Derate Above 25oC 1.52 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.66 oC/W 52 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 40μH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDD86367 Device FDD86367 Package D-PAK(TO-252) Semiconductor Components Industries, LLC, 2017 January, 2017, Rev. 1.0 Reel Size 13” Tape Width 12mm Quantity 2500units Publication Order Number: FDD86367/D 1 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V, VGS = 0V 80 - - V - - 1 μA - - 1 mA - - ±100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA 2 3 4 V ID = 80A, VGS= 10V - 3.3 4.2 mΩ - 6.6 8.4 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VGS = 0.5V, f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 40V, VGS = 0V, f = 1MHz VDD = 40V ID = 80A - 4840 - pF - 814 - pF - 31 - pF - 2.3 - Ω - 68 88 nC - 8.8 - nC - 22 - nC 14 - nC ns Switching Characteristics ton Turn-On Time - - 104 td(on) Turn-On Delay - 20 - ns tr Rise Time - 49 - ns td(off) Turn-Off Delay - 36 - ns tf Fall Time - 16 - ns toff Turn-Off Time - - 80 ns V VDD = 40V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD = 80A, VGS = 0V - - 1.3 ISD = 40A, VGS = 0V - - 1.2 V VDD = 64V, IF = 80A, dISD/dt = 100A/μs - 68 102 ns - 66 106 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. www.onsemi.com 2 FDD86367 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 I D, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 200 1.2 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY SILICON 160 VGS = 10V CURRENT LIMITED BY PACKAGE 120 80 40 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, Zθ JC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 TC = 25oC VGS = 10V FOR TEMPERATURES I DM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 0 10 1 10 FDD86367 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.01 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 350 IS, REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) TJ = 175oC TJ = 25oC T J = -55oC 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 50 0 0 1 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) TJ = 175 oC 10 TJ = 25 oC 1 350 200 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 8. Forward Diode Characteristics 250 150 100 VSD, BODY DIODE FORWARD VOLTAGE (V) 80μs PULSE WIDTH Tj=25oC 300 10 VGS = 0 V 100 0.1 0.0 10 Figure 7. Transfer Characteristics 350 1 350 150 2 0.1 Figure 6. Unclamped Inductive Switching Capability 200 50 0.01 NOTE: Refer to ON Application Notes AN7514 and AN7515 250 100 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VDD = 5V 300 STARTING TJ = 25oC 10 1 0.001 200 Figure 5. Forward Bias Safe Operating Area 0 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 80μ s PULSE WIDTH o 300 Tj=175 C 250 200 VGS 15V Top 10V 8V 7V 6V 5.5V 5.5V 5V Bottom 150 100 50 0 5 Figure 9. Saturation Characteristics 0 1 2 3 4 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD86367 N-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on) , DRAIN TO SOURCE ON-RESISTANCE (m Ω) 50 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX I D = 80A 40 30 TJ = 25o C 20 10 TJ = 175oC 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.8 1.6 1.4 1.2 1.0 0.8 ID = 80A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250μ A 1.2 ID = 5mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss 1000 Coss 100 C rss f = 1MHz VGS = 0V 10 0.1 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature V GS, GATE TO SOURCE VOLTAGE(V) Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.2 80 Figure 15. Capacitance vs. Drain to Source Voltage 10 I D = 80A 8 VDD = 32V 40V 48V 6 4 2 0 0 20 40 60 Q g, GATE CHARGE(nC) 80 Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 FDD86367 N-Channel PowerTrench® MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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