GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz Features • • • • • • • AM42-0007-DIE V4 Functional Schematic High Linear Gain: 22 dB Typical. High Saturated Output Power: +33 dBm Typical High Power Added Efficiency: 22% Typical High P1dB: +32 dBm Typical 50 Ω Input / Output Broadband Matched Integrated Output Power Detector High Performance Ceramic Bolt Down Package Description M/A-COM’s AM42-0007-DIE is a three stage MMIC linear power amplifier fabricated on a mature 0.5 micron MBE based GaAs process. The AM42-0007DIE employs a fully matched chip with integral bias networks and output power detector. This GaAs MMIC power amplifier is ideally suited for used as an output stage or driver in applications for VSAT applications. Ordering Information Part Number Package AM42-0007-DIE DIE Typical Bias Configuration 3,4 Absolute Maximum Ratings 1,2 Parameter Absolute Maximum VDD VGG +12 Volts -10 Volts Power Dissipation 17.9 W RF Input Power +23 dBm ChannelTemperature +150 °C Storage Temperature -65 °C to +150 °C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. Back of die temperature (TB) = +25°C. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 3. Nominal bias is obtained by first connecting –5 volts to pin VGG (resistor network used) followed by connecting +9 volts to pin VDD. Note sequence. 4. It is recommended that the die be mounted with Au/Sn eutectic performs for good RF ground and thermal interface. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. GaAs MMIC Power Amplifier, 2 W, 14.0 - 14.5 GHz AM42-0007-DIE V4 Electrical Specifications 5: TB = +25°C , VDD = +9 V, VGG = -1.2V, Z0 = 50Ω Parameter Test Conditions Units Min. Typ. Max. Linear Gain PIN < 0 dBm dB — 22 — Input VSWR — Ratio — 2.5:1 — Output VSWR — Ratio — 2.7:1 — Saturated Output Power PIN < +14 dBm dBm — +33 — Output Power @ 1dB Compression dBm 31 +32 — Output IP3 dBm — 41 — Power Added Efficiency (PAE) PIN < +14 dBm % — 22 — Bias Current IDSQ (No RF) mA — 850 — IGG (No RF) mA — 0.1 — Thermal Resistance θ CB2 °C/W — 7 Detector Output Voltage (VDET) Pin = +3 dBm, Ids = 750 mA Typ. V — +3.5 — — 6 5. 100% on wafer tested (50 µs pulse width, 20% duty factor) without resistor network on gates. 6. Channel to die backside. Typical Performance @ 25°C 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.