AP4578M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Lower Gate Charge ▼ Fast Switching Performance D2 D2 SO-8 SO-8 S2 G1 S2 S1 G1 S1 G2 G2 Description N-CH BVDSS RDS(ON) 60V 64mΩ ID P-CH BVDSS RDS(ON) ID 4.5A -60V 125mΩ The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. -3A D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 60 -60 V ±20 ±20 V Continuous Drain Current 3 4.5 -3 A Continuous Drain Current 3 3.6 -2.4 A 20 -20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 Linear Derating Factor 0.016 W W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 201122041 AP4578M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 60 - - V - 0.05 - V/℃ VGS=10V, ID=4A - 55 64 mΩ VGS=4.5V, ID=2A - 65 80 mΩ VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=10V, ID=4A - 7 - S o VDS=60V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=4A - 9 17 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=30V - 9 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=30Ω - 7 - ns Ciss Input Capacitance VGS=0V - 730 1170 pF Coss Output Capacitance VDS=25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=4A, VGS=0V - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 39 - nC AP4578M o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -60 - - V - -0.04 - V/℃ VGS=-10V, ID=-3A - 100 125 mΩ VGS=-4.5V, ID=-2A - 120 150 mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-2A - 5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-60V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-48V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±20V - - ±100 nA BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) IGSS VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance 2 Max. Units Qg Total Gate Charge ID=-3A - 12 20 nC Qgs Gate-Source Charge VDS=-48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-30V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 33 - ns tf Fall Time RD=30Ω - 6 - ns Ciss Input Capacitance VGS=0V - 905 1450 pF Coss Output Capacitance VDS=-25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 12 18 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-3A, VGS=0V - 36 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 55 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad. AP4578M N-Channel 25 25 T A = 25 o C 10V 7.0V 20 ID , Drain Current (A) 20 ID , Drain Current (A) 10V 7.0V T A =150 o C 15 10 5 15 10 V G =3.0V 5 V G =3.0V 0 0 0 1 2 3 4 5 0 1 V DS , Drain-to-Source Voltage (V) 4 5 Fig 2. Typical Output Characteristics 1.6 75 ID=2A T A =25 o C I D =4A V G =10V 1.4 Normalized RDS(ON) 70 RDS(ON) (mΩ ) 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 65 60 55 1.2 1.0 -6.3 -5 0.8 50 0.6 2 4 6 8 10 -50 Fig 3. On-Resistance v.s. Gate Voltage 3 1.5 Normalized VGS(th) (V) 2 T j =150 o C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4 2 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) IS(A) 2 T j =25 o C 1 1 0.5 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 T j ,Junction Temperature ( 100 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4578M N-Channel f=1.0MHz 1000 C iss ID=4A V DS = 48 V 10 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss 100 C rss 4 2 0 10 0 4 8 12 16 20 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 Normalized Thermal Response (Rthja) Duty factor=0 5 100us 1ms ID (A) 10ms 1 100 T A =25 o C Single Pulse 0.1 02 01 0.1 0 05 PDM 0 02 t T 0 01 0.01 Duty factor = t/T Peak T = P x R Single Pulse +T 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 25 VG V DS =5V ID , Drain Current (A) 20 T j =25 o C QG T j =125 o C 4.5V 15 QGS QGD 10 5 Charge 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q AP4578M P-Channel 20 20 -10V o T A =150 C -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 15 10 V 3 0V 5 -10V 15 10 V 5 0 3 0V 0 0 1 2 3 4 5 6 7 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 170 I D = -2 A I D = -3 A V G = - 10V 1.8 o T A =25 C 160 Normalized R DS(ON) RDS(ON) (mΩ ) 1.6 150 140 1.4 1.2 1.0 0.8 130 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 2 Normalized -VGS(th) (V) 1.5 -IS(A) 2 T j =25 o C o T j =150 C 1 0 1 0.5 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4578M P-Channel f=1.0MHz -VGS , Gate to Source Voltage (V) 12 10000 I D =-3A V DS =-48V 10 8 C iss C (pF) 1000 6 4 C 100 C rss 2 0 10 0.0 5.0 10.0 15.0 20.0 25.0 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 100us -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 1 T A =25 o C 0.1 0.1 P DM 0.01 t T Duty factor = t/T Peak Tj = P DM x Rthja + Ta Rthja = 135℃ ℃ /W 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance -ID , Drain Current (A) 20 VG V DS =-5V 15 T j =25 o C QG T j =150 o C -4.5V QGS 10 QGD 5 Charge 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q