Ordering number : ENA1581A ECH8501 Bipolar Transistor http://onsemi.com (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--30)40 V (--)30 V (--)6 V (--)5 A Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC PT Tj Storage Temperature Tstg Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Total Dissipation PW≤1μs, duty cycle≤1% (--)30 A (--)600 mA When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-007 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8501-TL-H Packing Type : TL 0.25 2.9 0.15 8 5 MA 2.3 2.8 0 to 0.02 LOT No. TL 4 1 0.65 Electrical Connection 0.3 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collector(NPN TR) 8 : Collector(NPN TR) 0.07 0.9 0.25 Marking Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 September, 2013 53012 TKIM/72110EA TKIM TC-00002441 No. A1581-1/8 ECH8501 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(--)125mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ 200 Unit max (--)0.1 μA (--)0.1 μA 560 (260)280 MHz (49)32 IC=(--)2.5A, IB=(--)125mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ pF (--100)75 (--170)110 (--)0.85 (--)1.2 (--30)40 V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. mV V V (--)30 V (--)6 V (37)30 ns (147)220 ns (14)12 ns Note : The specifications shown above are for each individual transistor. Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT Vout IB2 VR RB 50Ω RL + + 100μF 470μF VBE= --5V VCC=12V IC=20IB1= --20IB2=2.5A (For PNP, the polarity is reversed.) Ordering Information Device ECH8501-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1581-2/8 ECH8501 --3.0 --10mA --8mA --6mA --2.5 --2.0 --1.5 --4mA --1.0 --2mA --0.5 IB=0mA --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V IC -- VBE 3.5 A 30m 20m A m 40 10mA 3.0 2.5 8mA 2.0 6mA 1.5 4mA 1.0 2mA IB=0mA 0 0 --0.5 0.1 0.2 0.3 0.5 0.4 Collector-to-Emitter Voltage, VCE -- V IT15618 [PNP] IC -- VBE 5 VCE= --2V IT15619 [NPN] VCE=2V 4 --1 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 1 0 --1.2 --25°C 2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V IT15620 hFE -- IC 1000 3 25°C 25°C --2 --25°C --3 Ta=75° C Collector Current, IC -- A --4 Ta=75° C Collector Current, IC -- A --5 [PNP] VCE= --0.5V 1.2 IT15621 hFE -- IC 1000 7 [NPN] VCE=0.5V 7 DC Current Gain, hFE Ta=75°C 5 DC Current Gain, hFE 4.0 A [NPN] 0.5 0 0 0 70m A 50m A --3.5 --20mA 4.5 Collector Current, IC -- A mA --70 mA --4.0 A --30m A m --40 IC -- VCE 5.0 mA mA 0 --5 --1 00 Collector Current, IC -- A --4.5 [PNP] 100 IC -- VCE --5.0 25°C 3 --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A hFE -- IC 1000 7 0.01 5 7 --10 IT15622 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A [PNP] hFE -- IC 1000 VCE= --2V 7 5 7 10 IT15623 [NPN] VCE=2V 7 Ta=75°C 5 DC Current Gain, hFE DC Current Gain, hFE 2 25°C 3 --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT15624 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT15625 No. A1581-3/8 ECH8501 VCE(sat) -- IC [PNP] 2 --100 7 5 °C 75 3 = Ta 2 C 5° --2 °C 25 --10 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 VCE(sat) -- IC [PNP] Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 C 5° =7 Ta 3 2 C 5° --2 C ° 25 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 VBE(sat) -- IC [PNP] = Ta 2 °C 25 10 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15679 Collector Current, IC -- A VCE(sat) -- IC [NPN] IC / IB=50 2 100 7 5 °C 75 C 5° --2 = Ta 3 2 °C 25 2 --1.0 Ta= --25°C 7 25°C 5 75°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Output Capacitance, Cob -- pF 7 5 3 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 IT15632 2 3 5 7 1.0 2 3 5 7 10 IT15680 VBE(sat) -- IC [NPN] IC / IB=20 1.0 Ta= --25°C 7 25°C 5 75°C 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15631 Cob -- VCB 100 f=1MHz 100 5 7 0.1 Collector Current, IC -- A [PNP] 2 3 2 2 0.01 5 7 --10 IT15630 Cob -- VCB 3 2 3 IC / IB=20 Collector Current, IC -- A Output Capacitance, Cob -- pF °C 75 C 5° --2 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 --1.0 5 7 0.01 5 7 --10 IT15628 Collector Current, IC -- A 2 --0.01 7 10 --10 7 --0.01 100 3 IC / IB=50 [NPN] IC / IB=20 2 3 0.01 5 7 --10 IT15678 Collector Current, IC -- A 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 VCE(sat) -- IC 3 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 [NPN] f=1MHz 7 5 3 2 10 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 IT15633 No. A1581-4/8 ECH8501 f T -- IC 3 2 100 7 5 3 7 5 3 2 3 5 7 --0.1 3 5 7 --1.0 2 3 Collector Current, IC -- A ASO 5 3 2 100 7 5 3 2 3 5 7 0.1 DC 10 ms 0m s s IC=5A 1m s op era tio n Ta=25°C Single pulse For PNP, minus sign is omitted. 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 3 5 7 1.0 2 PC -- Ta 1.8 3 5 7 10 IT15635 [PNP/NPN] When mounted on ceramic substrate (900mm2×0.8mm) 1.6 10 2 Collector Current, IC -- A ≤1μs 100μs [NPN] VCE=10V 2 0.01 5 7 --10 IT15634 [PNP/NPN] ICP=30A 1.0 7 5 3 2 0.1 7 5 3 2 2 0μ 50 10 7 5 3 2 2 fT -- IC 7 Gain-Bandwidth Product, fT -- MHz 5 2 --0.01 Collector Current, IC -- A [PNP] VCE= --10V Collector Dissipation, PC -- W Gain-Bandwidth Product, f T -- MHz 7 1.4 1.3 1.2 To t al 1.0 Di ss ip nit atio 1u 0.8 n 0.6 0.4 0.2 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 5 IT15636 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15457 No. A1581-5/8 ECH8501 Embossed Taping Specification ECH8501-TL-H No. A1581-6/8 ECH8501 Outline Drawing ECH8501-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1581-7/8 ECH8501 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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