ASI ASI10570 Npn silicon rf power transistor Datasheet

AVF150
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG (B)
A
.100 X 45°
DESCRIPTION:
ØD
The ASI AVF150 is Designed for
.088 x 45°
CHAMFER
C
B
FEATURES:
•
•
• Omnigold™ Metalization System
E
F
G
H
I
MAXIMUM RATINGS
11 A
IC
VCC
55 V
PDISS
400 W @ TC = 25 OC
TJ
-65 OC to +250 OC
O
TSTG
-65 C to +200 C
θ JC
0.6 OC/W
CHARACTERISTICS
SYMBOL
K
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
1.050 / 26.67
C
.245 / 6.22
D
.120 / 3.05
.140 / 3.56
E
.552 / 14.02
.572 / 14.53
F
.790 / 20.07
.810 / 20.57
MAXIMUM
.255 / 6.48
.285 / 7.24
G
H
.003 / 0.08
.007 / 0.18
I
.052 / 1.32
.072 / 1.83
J
.120 / 3.05
.130 / 3.30
.210 / 5.33
K
O
J
ORDER CODE: ASI10570
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 15 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 43 V
MHz
RBE = 10 Ω
IC = 1.0 A
POUT = 150 W
MINIMUM TYPICAL MAXIMUM
V
65
V
3.5
V
15
f = 1030 - 1090
UNITS
65
8.5
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
12.5
mA
120
--dB
%
REV. A
1/1
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