AP9980GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 80V ▼ Single Drive Requirement RDS(ON) 45mΩ ▼ Fast Switching Performance ID 21.3A ▼ Low Gate Charge D G S Description G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9980GJ) are available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 21.3 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 13.4 A 80 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 41.7 W Linear Derating Factor 0.33 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3.0 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 200810172 AP9980GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 80 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.07 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 45 mΩ VGS=4.5V, ID=8A - - 55 mΩ VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=12A - 20 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=64V ,VGS=0V - - 100 uA Gate-Source Leakage VGS=+25V - - +100 nA ID=12A - 18 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=64V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC VDS=40V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=12A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 29 - ns tf Fall Time RD=3.3Ω - 30 - ns Ciss Input Capacitance VGS=0V - 1810 2900 pF Coss Output Capacitance VDS=25V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 96 - pF Rg Gate Resistance f=1.0MHz - 1.6 - Ω Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=12A, VGS=0V, - 57 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 140 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9980GH/J 60 50 10V 6.0V 5.0V 4.5V T C =25 o C 40 40 ID , Drain Current (A) ID , Drain Current (A) 50 30 20 10 30 20 V G =3.0V 10 V G =3.0V 0 0 0 3 6 9 12 15 18 0 3 6 9 12 15 18 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 54 2.2 I D = 12 A V G =10V 2.0 ID=8A T C =25 o C 1.8 Normalized RDS(ON) 50 RDS(ON) (mΩ) 10V 6.0V 5.0V 4.5V T C =150 o C 46 1.6 1.4 1.2 1.0 42 0.8 0.6 38 trr 0.4 3 5 7 9 -50 11 0 50 100 o V GS , Gate-to-Source Voltage (V) Qrr 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 3 2.5 6 VGS(th) (V) IS(A) 2 T j =150 o C T j =25 o C 4 1.5 1 2 0.5 0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9980GH/J f=1.0MHz 12 10000 I D = 12 A C iss V DS = 4 0V V DS = 50 V V DS = 64 V 8 1000 C (pF) VGS , Gate to Source Voltage (V) 10 6 C oss C rss 100 4 2 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) 10us 100us ID (A) 10 1ms 10ms 100ms 1 DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 t , Pulse Width (s) Qrr 1 Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 E3 B1 F1 e Millimeters SYMBOLS E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number 9980GH Package Code Meet Rohs requirement for low voltage MOSFET only LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E1 E A1 B2 F B1 MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.50 0.69 0.88 B2 0.60 0.87 1.14 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 5.20 5.35 5.50 E 6.70 7.00 7.30 E1 5.40 5.80 6.20 e ---- 2.30 ---- F 5.88 6.84 7.80 1.All Dimensions Are in Millimeters. c e 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 9980GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence 6