DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557; BC558 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546, BC547 and BC548. 3 2 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS − −80 V BC557 − −50 V − −30 V − −65 V collector-emitter voltage open base BC557 − −45 V BC558 − −30 V − −200 mA − 500 mW 125 475 125 800 100 − ICM peak collector current Ptot total power dissipation Tamb ≤ 25 °C hFE DC current gain IC = −2 mA; VCE = −5 V BC556 BC557; BC558 1997 Mar 27 UNIT BC556 BC556 fT MAX. open emitter BC558 VCEO MIN. transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BC556 − −80 V BC557 − −50 V − −30 V BC556 − −65 V BC557 − −45 V − −30 V − −5 V BC558 VCEO MIN. collector-emitter voltage open base BC558 VEBO emitter-base voltage open collector IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Mar 27 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V − −1 −15 nA ICBO collector cut-off current IE = 0; VCB = −30 V; Tj = 150 °C − − −4 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 125 − 475 BC557; BC558 125 − 800 BC556A; BC557A; BC558A 125 − 250 BC556B; BC557B; BC558B 220 − 475 BC557C; BC558C 420 − 800 BC556 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −60 −300 mV VBEsat base-emitter saturation voltage IC = −100 mA; IB = −5 mA − −180 −650 mV IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV VBE base-emitter voltage IC = −10 mA; VCE = −5 V; note 2 − − −820 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 3 − pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 2 10 dB Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 1997 Mar 27 4 − Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 MBH726 300 handbook, full pagewidth hFE 200 VCE = 5 V 100 0 10−1 1 102 10 IC (mA) 103 BC556A; BC557A; BC558A. Fig.2 DC current gain; typical values. MBH727 400 handbook, full pagewidth hFE VCE = 5 V 300 200 100 0 10−2 10−1 1 10 BC556B; BC557B; BC558B. Fig.3 DC current gain; typical values. 1997 Mar 27 5 102 IC (mA) 103 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 MBH728 600 handbook, full pagewidth hFE 500 VCE = 5 V 400 300 200 100 0 10−2 10−1 1 10 BC557C; BC558C. Fig.4 DC current gain; typical values. 1997 Mar 27 6 102 IC (mA) 103 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Mar 27 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Mar 27 8 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 NOTES 1997 Mar 27 9 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 NOTES 1997 Mar 27 10 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557; BC558 NOTES 1997 Mar 27 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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