PHILIPS BC557 Pnp general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC556; BC557; BC558
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 27
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage1
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546, BC547 and BC548.
3
2
3
2
1
MAM281
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
−
−80
V
BC557
−
−50
V
−
−30
V
−
−65
V
collector-emitter voltage
open base
BC557
−
−45
V
BC558
−
−30
V
−
−200
mA
−
500
mW
125
475
125
800
100
−
ICM
peak collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
hFE
DC current gain
IC = −2 mA; VCE = −5 V
BC556
BC557; BC558
1997 Mar 27
UNIT
BC556
BC556
fT
MAX.
open emitter
BC558
VCEO
MIN.
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
2
MHz
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BC556
−
−80
V
BC557
−
−50
V
−
−30
V
BC556
−
−65
V
BC557
−
−45
V
−
−30
V
−
−5
V
BC558
VCEO
MIN.
collector-emitter voltage
open base
BC558
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 27
3
VALUE
UNIT
250
K/W
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
IE = 0; VCB = −30 V
−
−1
−15
nA
ICBO
collector cut-off current
IE = 0; VCB = −30 V; Tj = 150 °C
−
−
−4
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V;
see Figs 2, 3 and 4
125
−
475
BC557; BC558
125
−
800
BC556A; BC557A; BC558A
125
−
250
BC556B; BC557B; BC558B
220
−
475
BC557C; BC558C
420
−
800
BC556
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−60
−300
mV
VBEsat
base-emitter saturation voltage
IC = −100 mA; IB = −5 mA
−
−180
−650
mV
IC = −10 mA; IB = −0.5 mA; note 1
−
−750
−
mV
IC = −100 mA; IB = −5 mA; note 1
−
−930
−
mV
IC = −2 mA; VCE = −5 V; note 2
−600
−650
−750
mV
VBE
base-emitter voltage
IC = −10 mA; VCE = −5 V; note 2
−
−
−820
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
3
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
10
−
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2
10
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
1997 Mar 27
4
−
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
MBH726
300
handbook, full pagewidth
hFE
200
VCE = 5 V
100
0
10−1
1
102
10
IC (mA)
103
BC556A; BC557A; BC558A.
Fig.2 DC current gain; typical values.
MBH727
400
handbook, full pagewidth
hFE
VCE = 5 V
300
200
100
0
10−2
10−1
1
10
BC556B; BC557B; BC558B.
Fig.3 DC current gain; typical values.
1997 Mar 27
5
102
IC (mA)
103
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
MBH728
600
handbook, full pagewidth
hFE
500
VCE = 5 V
400
300
200
100
0
10−2
10−1
1
10
BC557C; BC558C.
Fig.4 DC current gain; typical values.
1997 Mar 27
6
102
IC (mA)
103
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1997 Mar 27
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 27
8
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
NOTES
1997 Mar 27
9
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
NOTES
1997 Mar 27
10
Philips Semiconductors
Product specification
PNP general purpose transistors
BC556; BC557; BC558
NOTES
1997 Mar 27
11
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© Philips Electronics N.V. 1997
SCA53
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117047/00/02/pp12
Date of release: 1997 Mar 27
Document order number:
9397 750 02033
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