tm FDMA1032CZ 20V Complementary PowerTrench® MOSFET General Description Features This device is designed specifically as a single package • Q1: N-Channel handset and other ultra-portable applications. RDS(ON) = 68 mΩ @ VGS = 4.5V 3.7 A, 20V. solution for a DC/DC 'Switching' MOSFET in cellular RDS(ON) = 86 mΩ @ VGS = 2.5V It • Q2: P-Channel features an independent N-Channel & P-Channel –3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V MOSFET with low on-state resistance for minimum RDS(ON) = 141 mΩ @ VGS = –2.5V conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching • Low profile – 0.8 mm maximum – in the new package directly from the controlling device. The MicroFET 2x2 MicroFET 2x2 mm package offers exceptional thermal performance for its • HBM ESD protection level > 2kV (Note 3) physical size and is well suited to switching applications. • RoHS Compliant PIN 1 S1 G1 D1 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Q1 Q2 Units VDS Drain-Source Voltage Parameter 20 –20 V VGS Gate-Source Voltage ±12 ±12 3.7 –3.1 V A Drain Current ID – Continuous (Note 1a) – Pulsed PD 6 Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range –6 1.4 W 0.7 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RθJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 032 FDMA1032CZ 7’’ 8mm 3000 units ©2008 Fairchild Semiconductor Corporation FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET March 2008 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics Q1 Q2 Q1 Q2 Q1 Q2 All 20 –20 VDS = VGS, ID = 250 µA VDS = VGS, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS = 4.5 V, ID = 3.7 A, TJ = 125°C VGS = –4.5V, ID = –3.1 A VGS = –2.5 V, ID = –2.5 A VGS = –4.5 V, ID = –3.1 A,TJ = 125°C VDS = 10 V, ID = 3.7 A VDS = –10 V, ID = –3.1 A Q1 Q2 Q1 Q2 Q1 0.6 –0.6 Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz V 15 –12 mV/°C 1 –1 ±10 µA 1.0 –1.0 –4 4 37 50 53 1.5 –1.5 V 68 86 90 mΩ 95 141 140 mΩ Q1 Q2 60 88 87 16 –11 Q1 Q2 Q1 Q2 Q1 Q2 340 540 80 120 60 100 µA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS VGS = 0 V, ID = 250 µA ID = –250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = 0 V VDS = –16 V, VGS = ±12 V, VDS = 0 V Forward Transconductance Q2 mV/°C S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Q2 VDS = –10 V, VGS = 0 V, f = 1.0 MHz pF pF pF FDMA1032CZ Rev B2 (W) Symbol TA = 25°C unless otherwise noted Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω Q2 VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω Q1 VDS = 10 V, ID = 3.7 A, VGS = 4.5 V Q2 VDS = –10 V,ID =– 3.1 A, VGS =– 4.5 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 13 8 11 14 37 3 36 4 7 0.7 1.1 1.1 2.4 16 24 16 20 26 59 6 58 6 10 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 1.1 A (Note 2) VGS = 0 V, IS = –1.1 A (Note 2) Q1 IF = 3.7 A, dIF/dt = 100 A/µs Q2 IF = –3.1 A, dIF/dt = 100 A/µs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.7 –0.8 11 25 2 9 1.1 –1.1 1.2 –1.2 A V ns nC Notes: 2 1. RθJA is determined with the device mounted on a 1 in pad of 2 oz. copper on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB (d) RθJA = 151°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Electrical Characteristics 5 ID, DRAIN CURRENT (A) 2.5V VGS = 4.5V 3.5V 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 3.0V 4 3 2 1 1.5V 0 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 0 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 1.4 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 1.2 Figure 1. On-Region Characteristics. 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 4 3 2 o TA = 125 C -55oC 1 o 25 C 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 ID, DRAIN CURRENT (A) VGS = 2.0V 1.8 VGS = 0V 10 1 0.1 TA = 125oC 0.01 o 25 C 0.001 o -55 C 0.0001 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 10 VGS, GATE-SOURCE VOLTAGE (V) 500 VDS = 5V ID = 3.7A 8 400 CAPACITANCE (pF) 10V 6 4 300 Ciss 200 Coss 2 100 0 0 Crss 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RθJA = 173°C/W TA = 25°C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 173°C/W TA = 25°C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 P(pk), PEAK TRANSIENT POWER (W) 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 15V 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 RθJA(t) = r(t) * RθJA RθJA =173 °C/W D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics Q1 (N-Channel) 5 -ID, DRAIN CURRENT (A) 2.6 VGS = 4 5V 2.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 2.0V 3.0V 4 3 2 1 1.5V 0 0 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 -2.5V 1.4 -3.0V 0 -4.0V -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.5 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.1A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = -1.55A 0.16 0.12 o TA = 125 C 0.08 o TA = 25 C 0.04 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 14. On-Resistance Variation with Temperature. 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 6 100 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 5 -ID, DRAIN CURRENT (A) -3.5V 1 0.6 2 Figure 12. On-Region Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -2.0V 2.2 4 3 2 TA = 125oC -55oC 1 25oC 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. 2.5 10 1 TA = 125oC 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) 1000 f = 1MHz VGS = 0 V ID = -3.1A 800 8 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 -10V 4 2 600 Ciss 400 Crss 0 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 Figure 18. Gate Charge Characteristics. 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 50 10 100us 1 DC 10s 1s 10ms 100ms 1ms VGS = -4.5V SINGLE PULSE o RθJA = 173 C/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 173°C/W TA = 25°C 40 30 20 10 0 0.0001 Figure 20. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 19. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) Coss 200 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 21. Single Pulse Maximum Power Dissipation. 1 RθJA(t) = r(t) * RθJA RθJA =173 °C/W D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDMA1032CZ Rev B2 (W) FDMA1032CZ 20V Complementary PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) ® FDMA1032CZ 20V Complementary PowerTrench MOSFET Dimensional Outline and Pad Layout rev3 FDMA1032CZ Rev B2 (W) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMA1032CZ Rev B2 (W) F FDMA1032CZ 20V Complementary PowerTrench® MOSFET TRADEMARKS