Single N-channel MOSFET ELM13406CA-S ■General description ■Features ELM13406CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=3.6A (Vgs=10V) Rds(on) < 65mΩ (Vgs=10V) Rds(on) < 105mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Symbol Limit Unit Vds Vgs 30 ±20 3.6 V V Id Ta=70°C Pulsed drain current 2.9 15 Idm Ta=25°C Power dissipation 1.4 Pd Ta=70°C Junction and storage temperature range Tj, Tstg 0.9 -55 to 150 Note A 1 A 2 W 1 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 70 100 63 90 125 80 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4- 1 Single N-channel MOSFET ELM13406CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Rds(on) Gfs Vsd Output capacitance Reverse transfer capacitance Gate resistance Coss Crss Rg SWITCHING PARAMETERS Total gate charge (10V) Qg Total gate charge (4.5V) Qg Gate-source charge Gate-drain charge Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 1 Tj=55°C 5 100 1.0 15 Tj=125°C Vgs=4.5V, Id=2.8A Vds=5V, Id=3.6A Is=1A 1.9 3.0 50 65 74 75 7 0.79 100 105 Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=3.6A td(on) tr Vgs=10V, Vds=15V td(off) Rl=2.2Ω, Rgen=3Ω tf trr Qrr If=3.6A, dl/dt=100A/μs If=3.6A, dl/dt=100A/μs nA V A mΩ 1.00 2.5 A 375 pF 57 39 3 6 pF pF Ω 6.5 8.5 nC 3.1 4.0 nC 288 Vgs=0V, Vds=15V, f=1MHz μA mΩ S V Is Ciss Turn-off fall time Vgs=10V, Id=3.6A Typ. 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Input capacitance Turn-on delay time Turn-on rise time Turn-off delay time Min. Ta=25°C Max. Unit 1.2 1.6 nC nC 4.6 1.9 20.1 ns ns ns 2.6 ns 10.2 3.5 14.0 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single N-channel MOSFET ELM13406CA-S ■Typical electrical and thermal characteristics 15 10 10V 4.5V 6V 8 4V 9 Id(A) Id (A) 12 3.5V 6 Vds=5V 6 4 125°C Vgs=3V 3 2 25°C 0 0 0 1 2 3 4 5 1.5 2 3 100 4 4.5 5 1.8 Normalized On-Resistance 90 Vgs=4.5V 80 70 60 50 Vgs=10V 40 Id=3.6A 1.6 Vgs=4.5V Vgs=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 Id=3.6A 1.0E+00 125° 150 1.0E-01 100 Is (A) Rds(on) (m� ) 3.5 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Rds(on) (m� ) 2.5 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.2 Single N-channel MOSFET ELM13406CA-S 10 Ciss Capacitance (pF) 8 Vgs (Volts) 400 Vds=15V Id=3.6A 6 4 2 300 200 Coss 0 0 1 2 3 4 5 6 0 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 100�s 0.1s 10ms 25 30 Tj(max)=150°C Ta=25°C 5 10s DC 0.1 1 10 0 0.001 100 Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Z�ja Normalized Transient Thermal Resistance 20 10 1s 10 15 15 10�s Power (W) Id (Amps) Rds(on) limited 0.1 10 20 Tj(max)=150°C Ta=25°C 1.0 5 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 Crss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000