SEMICONDUCTOR BC807 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D ·Complementary to BC817. 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA PC* 350 mW Tj 150 ℃ Tstg -55～150 ℃ Q Collector Power Dissipation Junction Temperature Storage Temperature Range P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.9% Alumina 10×8×0.6mm. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 - 630 hFE(2) VCE=-1V, IC=-500mA 40 - - VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V Transition Frequency fT 80 - - MHz - 9 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Note : hFE Classification 16:100～250 , 25:160～400 , 40:250～630 Marking Lot No. MARK SPEC TYPE. BC807-16 BC807-25 BC807-40 MARK 5A 5B 5C 2009. 2. 19 Revision No : 5 Type Name 1/2 BC807 h FE - I C I C - VCE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE =-1V 500 300 Ta=100 C Ta=25 C Ta=-25 C 50 30 COMMON EMITTER Ta=25 C -8 -800 -600 -3 -400 -2 -200 I B =-1mA 0 0 -100 -300 0 -1000 -1 -2 Ta=100 C -0.1 Ta=25 C Ta=-25 C -100 -300 TRANSITION FREQUENCY f T (MHz) C -100 -30 -10 -3 -1 -0.2 -1000 -0.6 -0.8 -1.0 fT - I C P C - Ta COMMON EMITTER Ta=25 C VCE =-5V 100 30 10 -3 -10 -30 -100 -300 -1000 500 400 300 200 100 0 0 COLLECTOR CURRENT I C (mA) 2009. 2. 19 -0.4 BASE-EMITTER VOLTAGE V BE (V) 500 -1 -300 COLLECTOR CURRENT I C (mA) 300 -6 COMMON EMITTER VCE =1V 100 -0.3 -1000 Ta= COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /IB =25 COLLECTOR POWER DISSIPATION P C (mW) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -30 -5 I C - V BE VCE(sat) - I C -0.01 -10 -4 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT IC (mA) -1 -3 Ta= -25 C -30 C 10 -10 -0.03 -7 -6 -5 -4 25 100 -1000 Ta= DC CURRENT GAIN h FE 1000 Revision No : 5 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2