KEC BC807 Epitaxial planar pnp transistor (general purpose, switching) Datasheet

SEMICONDUCTOR
BC807
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
E
B
L
L
D
·Complementary to BC817.
3
H
G
A
2
1
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-800
mA
Emitter Current
IE
800
mA
PC*
350
mW
Tj
150
℃
Tstg
-55~150
℃
Q
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
P
K
J
N
C
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93 +_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-20V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μA
hFE(1)
VCE=-1V, IC=-100mA
100
-
630
hFE(2)
VCE=-1V, IC=-500mA
40
-
-
VCE(sat)
IC=-500mA, IB=-50mA
-
-
-0.7
V
Base-Emitter Voltage
VBE
VCE=-1V, IC=-500mA
-
-
-1.2
V
Transition Frequency
fT
80
-
-
MHz
-
9
-
pF
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
Note : hFE Classification 16:100~250 , 25:160~400 , 40:250~630
Marking
Lot No.
MARK SPEC
TYPE.
BC807-16
BC807-25
BC807-40
MARK
5A
5B
5C
2009. 2. 19
Revision No : 5
Type Name
1/2
BC807
h FE - I C
I C - VCE
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE =-1V
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
COMMON EMITTER
Ta=25 C
-8
-800
-600
-3
-400
-2
-200
I B =-1mA
0
0
-100
-300
0
-1000
-1
-2
Ta=100 C
-0.1
Ta=25 C
Ta=-25 C
-100
-300
TRANSITION FREQUENCY
f T (MHz)
C
-100
-30
-10
-3
-1
-0.2
-1000
-0.6
-0.8
-1.0
fT - I C
P C - Ta
COMMON EMITTER
Ta=25 C
VCE =-5V
100
30
10
-3
-10
-30
-100
-300
-1000
500
400
300
200
100
0
0
COLLECTOR CURRENT I C (mA)
2009. 2. 19
-0.4
BASE-EMITTER VOLTAGE V BE (V)
500
-1
-300
COLLECTOR CURRENT I C (mA)
300
-6
COMMON EMITTER
VCE =1V
100
-0.3
-1000
Ta=
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
I C /IB =25
COLLECTOR POWER DISSIPATION
P C (mW)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-3
-30
-5
I C - V BE
VCE(sat) - I C
-0.01
-10
-4
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT IC (mA)
-1
-3
Ta=
-25
C
-30
C
10
-10
-0.03
-7
-6
-5
-4
25
100
-1000
Ta=
DC CURRENT GAIN h FE
1000
Revision No : 5
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2/2
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