DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES • High current (max. 500 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. handbook, halfpage1 DESCRIPTION 3 2 3 2 NPN transistor in a TO-92; SOT54 plastic package. PNP complement: BC327. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation − 625 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 V Philips Semiconductors Product specification NPN general purpose transistor BC337 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 0.2 K/mW note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 20 V − − 100 nA IE = 0; VCB = 20 V; Tj = 150 °C − − 5 µA IC = 0; VEB = 5 V − − 100 nA IC = 100 mA; VCE = 1 V; see Figs 2, 3 and 4 100 − 600 BC337-16 100 − 250 BC337-25 160 − 400 BC337-40 250 − 600 BC337 DC current gain IC = 500 mA; VCE = 1 V; see Figs 2, 3 and 4 40 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA − − 700 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; note 1 − − 1.2 V Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Note 1. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 15 3 Philips Semiconductors Product specification NPN general purpose transistor BC337 MBH721 20 handbook, full pagewidth hFE 160 VCE = 1 V 120 80 40 0 10−1 1 10 102 IC (mA) 103 BC337-16. Fig.2 DC current gain; typical values. MBH720 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC337-25. Fig.3 DC current gain; typical values. 1999 Apr 15 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC337 MBH722 500 handbook, full pagewidth hFE 400 VCE = 1 V 300 200 100 0 10−1 1 10 BC337-40. Fig.4 DC current gain; typical values. 1999 Apr 15 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistor BC337 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 15 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistor BC337 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 15 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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