DCR750F85 Phase Control Thyristor DS5934-3 July 2014 (LN31717) KEY PARAMETERS FEATURES Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 733A 9800A 1500V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS Medium Voltage Soft Starts High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR750F85* DCR750F80 DCR750F75 DCR750F70 8500 8000 7500 7000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 *8200V @ -40 C, 8500V @ 0 C Outline type code: F (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR750F85 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 733 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1151 A Continuous (direct) on-state current - 1139 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 9.8 kA VR = 0 0.48 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.0184 °C/W Single side cooled Anode DC - 0.0333 °C/W Cathode DC - 0.0418 °C/W Double side - 0.004 °C/W - 0.008 °C/W - 125 °C Clamping force 23 kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 20.0 25.0 kN 2/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 100 A/µs Gate source 30V, 10, Non-repetitive - 200 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 100A to 500A at Tcase = 125°C - 1.030 V Threshold voltage – High level 500A to 2500A at Tcase = 125°C - 1.30 V On-state slope resistance – Low level 100A to 500A at Tcase = 125°C - 2.06 m On-state slope resistance – High level 500A to 2500A at Tcase = 125°C - 1.542 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 1200 µs 95 118 A 3000 4000 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, I peak = 1000A, tp = 1000us, VR = 100V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear to 2500V IRR Reverse Recovery current QS Stored charge IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt = – 5A/µs, VRpeak = 100V 3/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 10 mA CURVES 3000 max 125ºC Instantaneous on-state current,TI - (A) min 125ºC max 25ºC 2500 min 25ºC 2000 1500 1000 500 0 0 2 4 6 Instantaneous on-state voltage, VTM - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.454245 B = 0.106933 C = 0.001271 D = 0.013218 these values are valid for Tj = 125°C for IT 100A to 3000A 4/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR 130 16 180 120 Maximum case temperature, Tcase ( o C ) Mean power dissipation - (kW) 14 12 10 8 6 180 4 120 90 60 2 120 110 90 100 60 30 90 80 70 60 50 40 30 20 10 30 0 0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) 0 2000 200 400 600 800 1000 1200 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 125 16 120 90 100 14 60 Mean power dissipation - (kW) T - ( ° C) Maximum heatsink temperature, Heatsink 180 30 75 50 12 10 8 6 d.c. 180 120 90 60 30 4 25 2 0 0 0 0 200 400 600 800 500 1000 1500 2000 2500 3000 1000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR 125 d.c. d.c. 180 120 90 60 30 100 T -(o C) Maximum heatsink temperature heatsink T -(° C) Maximum permissible case temperature ,case 125 75 50 25 180 120 100 90 60 30 75 50 25 0 0 0 500 1000 1500 2000 0 500 1000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 45.0 Double side cooled Thermal Impedance Zth(j-c) ( °C/kW ) Double Side Cooled 40.0 Anode side cooled Ri (°C/kW) 1 7.5608 2 4.0772 Ti (s) 0.6877 0.2537 0.0614 0.0101 Ri (°C/kW) 6.7211 4.6219 15.5387 14.8631 Ti (s) Cathode Side Cooled Cathode side cooled 35.0 1500 Ri (°C/kW) Ti (s) Anode Side Cooled 3 3.8420 4 2.8671 0.1910 0.0158 5.0011 3.3169 11.5564 8.5810 4.7942 8.3643 4.2216 6.0269 0.0166 0.2255 i 4 Z th [ Ri i(41 exp(T / Ti )] Z th [ Ri (1 exp(-T/ Ti )] 30.0 i 1 25.0 i 1 20.0 Rth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. 15.0 10.0 5.0 0.0 0.001 0.01 0.1 1 Time ( s ) 10 100 ° 180 120 90 60 30 15 Double side cooling Zth (z) sine. rect. 3.19 2.14 3.72 3.10 4.29 3.64 4.81 4.23 5.22 4.88 5.40 5.22 ° 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. rect. 2.97 2.03 3.43 2.89 3.92 3.36 4.36 3.87 4.69 4.41 4.84 4.70 Cathode Sided Cooling Zth (z) ° sine. rect. 180 2.95 2.02 120 3.40 2.87 90 3.88 3.34 60 4.31 3.84 30 4.64 4.37 15 4.79 4.65 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR 25 2.5 10 Conditions: Tcase= 125°C VR = 0 half-sine wave Conditions: Tcase = 125°C VR =0 Pulse width = 10ms ITSM 15 1.5 I2t 10 1 5 0.5 0 1 1 10 1 100 0 100 10 Pulse width, tP - (ms) Number of cycles Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 10000 250 9000 Reverse recovery current, Irr - (A) Q s max = 3667.9*(di/dt) 0.3917 8000 Stored Charge, Qs - (uC) 2 I2t (MA2s) Surge current, ITSM - (kA) Surge current, TI SM- (kA) 20 7000 6000 5000 4000 Q s typical = 3158.5*(di/dt) 0.4161 3000 Conditions: Tj = 125°C, V peak ~ 4400V Vrm ~ 2600V snubber as appropriate to control reverse voltage 2000 1000 200 IRRmax = 42.374*(di/dt) 0.7033 150 IRRtypical = 39.671*(di/dt) 0.7197 Conditions: Tj = 125°C, V peak ~ 4400V Vrm ~ 2600V snubber as appropriate to control reverse voltage 100 50 0 0 0 2 4 6 8 10 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 12 0 2 4 6 8 10 12 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR 10 9 Gate trigger voltage, V GT - (V) 8 7 Upper Limit 6 5 Preferred gate drive 4 3 Tj = -40oC 2 Lower Limit Tj = 25oC 1 Tj = 125oC 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current I GT , - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W Gate trigger voltage, VGT - (V) 25 10W 20W 50W 20 100W 150W -40C 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, I GT - (A) Fig. 15 Gate characteristics 8/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR 1.35 Normalised Turn-off time, Tq - (us) 1.3 Tq (dv/dt) = Tq(20V/us).0.7148.(dv/dt)0.1124 1.25 1.2 1.15 1.1 1.05 Conditions: Tj = 125oC I F = 1000A tp = 1000us VRM = 100V di/dt = -5A/us 1 0.95 0.9 0.85 0.8 0.75 0 20 40 60 80 100 120 Rate of change of reapplied voltage, dv/dt - (V/us) Fig.16 Turn-off time 9/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Ø73.0 MAX Ø47.0 NOM Ø1.5 CATHODE GATE ANODE Ø47.0 NOM Device DCR1003SF18 DCR1006SF28 DCR1008SF36 DCR1020F65 DCR1050SF42 DCR1180F52 DCR1274SF18 DCR1275SF28 DCR1277SF36 DCR1279SF48 DCR1350F42 DCR1610F28 DCR1640F28 DCR1830F22 DCR750F85 DCR810F85 DCR840F48 DCR890F65 DCR950F65 Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.72 26.17 27.1 26.55 26.72 26.17 26.84 26.29 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 26.72 26.17 26.49 25.94 26.49 25.94 26.415 25.865 27.46 26.91 27.46 26.91 26.84 26.29 27.1 26.5 27.1 26.5 FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F Fig.17 Package outline 10/11 www.dynexsemi.com DCR750F85 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 11/11 www.dynexsemi.com