DPG60IM300PC HiPerFRED² VRRM = 300 V I FAV = 60 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG60IM300PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60IM300PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V IR reverse current, drain current VF typ. VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.35 mA TVJ = 25°C 1.43 V 1.78 V 1.14 V IF = forward voltage drop min. 60 A I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 135°C rectangular 1.53 V T VJ = 175 °C 60 A TVJ = 175 °C 0.69 V d = 0.5 for power loss calculation only 6.4 mΩ 0.45 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 80 pF I RM max. reverse recovery current TVJ = 25 °C 3.5 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 60 A; VR = 200 V -di F /dt = 200 A/µs 335 550 W A TVJ = 125°C 9 A TVJ = 25 °C 35 ns TVJ = 125°C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60IM300PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight FC 1) 2 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Part number D P G 60 IM 300 PC XXXXXXXXX Part No. IXYS Zyyww Logo Assembly Line = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) 000000 Date Code Assembly Code Ordering Standard Part Number DPG60IM300PC Similar Part DPG60I300HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60IM300PC Package TO-247AD (2) * on die level Delivery Mode Tape & Reel Code No. 502404 Voltage class 300 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.69 V R 0 max slope resistance * 3.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 800 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60IM300PC Outlines TO-263 (D2Pak) Dim. L1 c2 Supplier Option A1 H D E A D1 W 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG60IM300PC Fast Diode 120 0.7 100 0.6 20 18 IF = 120 A 60 A 30 A 80 Qrr 0.5 IF 14 IRM 12 60 [A] IF = 120 A 60 A 30 A 16 [μC] 0.4 TVJ = 150°C 40 [A] 10 8 0.3 20 TVJ = 125°C VR = 200 V 25°C 0.2 0.0 0.4 0.8 1.2 1.6 4 0 2.0 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt VF [V] Fig. 1 Forward current IF versus VF 1000 TVJ = 125°C VR = 200 V 1.2 70 800 60 [ns] 50 Qrr 0.2 0 40 40 80 120 160 9 8 700 7 600 6 500 5 400 4 300 3 200 400 600 0 400 [V] 2 600 Fig. 6 Typ. forward recovery voltage VFR & time tfr versus diF /dt Fig. 5 Typ. reverse recov. time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 200 VFR -diF /dt [A/μs] -diF /dt [A/μs] 16 10 VFR 200 0 TVJ [°C] 1.0 14 IF = 120 A 12 60 A 30 A 10 Erec [ns] IF = 120 A 60 A 30 A 0.6 0.4 600 tfr trr IRM 400 TVJ = 125°C VR = 200 V IF = 60 A tfr 900 1.0 Kf 0.8 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 80 1.4 TVJ = 125°C VR = 200 V 6 ZthJC 8 [K/W] [μJ] 6 4 TVJ = 125°C VR = 200 V 2 0 200 400 600 0.1 10 0 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 10 1 10 2 10 3 10 4 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a