PHILIPS BFQ17 Npn 1 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ17
NPN 1 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
DESCRIPTION
BFQ17
PINNING
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. The
transistor has extremely good
intermodulation properties and a high
power gain.
PIN
DESCRIPTION
Code: FA
page
1
emitter
2
collector
3
base
1
2
Bottom view
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
25
V
ICM
peak collector current
−
300
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
−
1
W
fT
transition frequency
IC = 150 mA; VCE = 15 V; f = 500 MHz;
Tj = 25 °C
1.5
−
GHz
Cre
feedback capacitance
IC = 10 mA; VCE = 15 V; f = 1 MHz;
Tamb = 25 °C
1.9
−
pF
MIN.
MAX.
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE ≤ 50 Ω
−
40
V
VCEO
collector-emitter voltage
open base
−
25
V
VEBO
emitter-base voltage
open collector
−
2
V
IC
DC collector current
−
150
mA
ICM
peak collector current
f > 1 MHz
−
300
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
−
1
W
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
THERMAL RESISTANCE
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
IE = 0; VCB = 20 V; Tj = 50 °C
−
−
20
µA
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA
−
−
0.5
V
DC current gain
IC = 150 mA; VCE = 5 V
25
80
−
Cc
collector capacitance
IE = ie = 0; VCB = 15 V; f = 1 MHz
−
−
4
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 15 V;
f = 1 MHz; Tamb = 25 °C
−
1.9
−
pF
fT
transition frequency
IC = 150 mA; VCE = 15 V;
f = 500 MHz
−
1.5
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 60 mA; VCE = 15 V;
f = 200 MHz; Tamb = 25 °C
−
16
−
dB
IC = 60 mA; VCE = 15 V;
f = 800 MHz; Tamb = 25 °C
−
6.5
−
dB
ICBO
collector cut-off current
VCE sat
hFE
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
- dB.
G UM = 10 log ------------------------------------------------------------2 
2

1
–
S
1
–
S

11  
22 
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
MBB365
MBB828
160
10
handbook, halfpage
handbook, halfpage
Cc
(pF)
h FE
8
120
6
80
4
40
2
0
0
100
0
200
I C (mA)
0
10
VCE = 5 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current.
MBB364
2
handbook, halfpage
fT
(GHz)
1.6
1.2
0.8
0.4
0
0
40
80
120
160
I C (mA)
VCE = 15 V; f = 500 MHz; Tj = 25 °C.
Fig.4
Transition frequency as a function of
collector current.
September 1995
4
20
30
V CB (V)
40
Collector capacitance as a function of
collector-base voltage.
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
September 1995
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFQ17
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
6
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