APTC60DSKM35T3 Dual buck chopper VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 11 18 22 Features • 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 • • • • 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single buck of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTC60DSKM35T3 – Rev 0 September, 2004 Absolute maximum ratings APTC60DSKM35T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 375µA VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Maximum Reverse Leakage Current IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 60A IF = 120A IF = 60A Reverse Recovery Time Qrr Reverse Recovery Charge VR=600V IF = 60A VR = 400V di/dt=200A/µs 1 40 375 35 3.9 ±150 mΩ V nA Max Unit Min Typ 14 5.13 0.42 518 Unit V µA nF 58 nC 222 Test Conditions IRM Max 3 21 30 84 1340 µJ 1960 2192 µJ 2412 Min 600 Tj = 25°C Tj = 125°C Tc = 70°C ns 283 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ 2.1 VGS = 10V VBus = 300V ID = 72A Diode ratings and characteristics trr Tj = 25°C Tj = 125°C Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A R G = 2.5Ω Tf VF Min 600 Typ Max 250 750 Tj = 125°C 60 2.2 2.3 1.4 Tj = 25°C 55 Tj = 125°C 151 Tj = 25°C 121 Tj = 125°C 999 Unit V µA A 2.7 V ns nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2-6 APTC60DSKM35T3 – Rev 0 September, 2004 Symbol BVDSS APTC60DSKM35T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T T 25 Unit °C/W V 150 125 100 4.7 110 M4 Temperature sensor NTC RT = 2500 -40 -40 -40 Max 0.3 0.9 Typ 68 4080 Max °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website – http://www.advancedpower.com 3-6 APTC60DSKM35T3 – Rev 0 September, 2004 Package outline APTC60DSKM35T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 80 TJ=125°C 40 TJ=25°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 36A 1.05 VGS =10V VGS=20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 0 0 20 40 60 80 I D, Drain Current (A) 100 120 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4-6 APTC60DSKM35T3 – Rev 0 September, 2004 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) 280 I D, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 µs limited by RDSon 100 1 ms 10 DC line 1 10 ms Single pulse TJ =150°C 0.1 -50 -25 0 25 50 75 100 125 150 1 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 1000 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 72A 14 ID=72A TJ=25°C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 0 100 APT website – http://www.advancedpower.com 200 300 400 Gate Charge (nC) 500 600 5-6 APTC60DSKM35T3 – Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DSKM35T3 APTC60DSKM35T3 Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 80 40 40 60 80 100 tr 20 0 20 0 120 0 20 ID, Drain Current (A) Switching Energy (mJ) Eon 100 120 6 Eoff Eon 4 2 0 40 60 80 100 ID, Drain Current (A) 120 ZCS ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C hard switching 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTC60DSKM35T3 – Rev 0 September, 2004 20 120 Frequency (kHz) VDS=400V ID=72A T J=125°C L=100µH 8 I DR, Reverse Drain Current (A) Switching Energy (mJ) Eoff Operating Frequency vs Drain Current 20 80 Switching Energy vs Gate Resistance 140 40 60 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 60 40 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 tf 60 td(on) 0 VDS=400V RG=2.5Ω T J=125°C L=100µH 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120