APM3011N N-Channel Enhancement Mode MOSFET Features • • • • Pin Description 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-220, TO-252 and TO-263 Packages Applications • Top View of TO-220 , TO-252 and TO-263 Power Management in Desktop Computer or DC/DC Converters Systems. Ordering and Marking Information APM3011N Package Code F : TO-220 U :TO-252 Temp. Range C : 0 to 70 ° C Handling Code TU : Tube TR : Tape & Reel Handling Code Temp. Range Package Code APM 3011N G/U/F : APM 3011N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol G : TO-263 (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Maximum Drain Current – Continuous 60 IDM Maximum Drain Current – Pulsed 120 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 1 www.anpec.com.tw APM3011N Absolute Maximum Ratings Cont. Symbol PD (TA = 25°C unless otherwise noted) Parameter Maxim um Power Dissipation Rating T A =25°C T A =100°C TJ TO-252 50 TO-263 62.5 TO-252 20 TO-263 25 Maxim um Junction Tem perature Unit W W 150 °C -55 to 150 °C T STG Storage Tem perature Range R θJA Thermal Resistance – Junction to Ambient 50 °C/W R θJC Thermal Resistance – Junction to Case 2.5 °C/W Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSda Dynamicb Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Parameter Drain-Source Breakdown V lt Gate Voltage Drain Zero Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=30A VGS=5V, IDS=15A ISD=24A, VGS=0V VDS=15V, IDS=30A VGS=4.5V VDD=15V, IDS=1A, VGEN=10V, RG=0.2Ω VGS=0V VDS=15V Frequency =1.0MHz APM3011N Typ. Max. Min. 30 Unit V 1 9 14 0.6 22 12.8 5 9 6 30 8 2000 420 210 1 5 3 ±100 11 18 1.2 µA V nA mΩ V 28 nC 14 12 45 16 ns pF Notes a b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 2 www.anpec.com.tw APM3011N Typical Characteristics Output Characteristics Transfer Characteristics 70 50 VDS=10V IDS-Drain Current (A) 50 IDS-Drain Current (A) VG=4,4.5,6,8,10V 60 V GS=3V 40 30 20 VGS=2.5V 40 30 TJ=25°C 20 TJ=125°C 10 TJ=-55°C 10 0 0 1 2 3 4 5 6 7 8 9 0 1.0 10 1.5 VDS-Drain-to-Source Voltage (V) 2.0 3.5 4.0 On-Resistance vs. Drain Current 1.2 0.020 RDS(ON)-On-Resistance (Ω) IDS=250µA VGS(th)-Variance (V) 3.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.0 0.8 0.6 0.4 -50 2.5 -25 0 25 50 75 100 125 0.012 V GS=10V 0.008 0.004 0.000 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 V GS=5V 0.016 0 10 20 30 40 50 60 IDS-Drain Current (A) 3 www.anpec.com.tw APM3011N Typical Characteristics Cont. On-Resistaence vs. Junction Temperature RDS(ON)-On Resistance (Ω) (Normalized) On-Resistance vs. Gate-to-Source Voltage 0.035 RDS (ON)-On-Resistance (Ω) IDS=30A 0.030 0.025 0.020 0.015 0.010 0.005 0.000 3 4 5 6 7 8 9 10 VGS=10V IDS=30A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 Gate Voltage (V) Tj-Junction Temperature (°C) Gate Charge Capacitance Characteristics 10 150 3000 VDS=15V IDS=20A 2000 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) 1.6 6 4 Ciss 1000 Coss 500 Crss 2 Frequency=1MHz 0 0 10 20 30 40 100 0.1 50 QG-Total-Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 1 10 30 VDS-Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM3011N Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 3000 100 2000 10 TJ=125°C 1 Power (W) ISD-Source Current (A) 2500 TJ=-55°C TJ=25°C 0.1 0.0 0.2 0.4 0.6 1500 1000 500 0.8 1.0 1.2 0 1 05 1.4 - - - - 1 04 1 03 1 02 1 01 VSD-Source to Drain Voltage 1 00 Time (sec) Transient Thermal Response Curve 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 D=0.1 0 .1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 0 .0 1 -5 10 10 -4 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=62.5°C/W 3. TJM-TA=PDMZthJA 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 5 www.anpec.com.tw APM3011N Package Informaion TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 0. 0 20 6 www.anpec.com.tw APM3011N Packaging Information Cont. TO-263 ( Reference JEDEC Registration TO-263) E L2 E1 TERMINAL 4 D1 D L L3 A c2 R Φ1 L1 L4 DETAIL "A"ROTED c Millimeters Dim A b b2 c c2 D E L L1 L2 L3 Min. 4.06 0.51 1.14 1.14 8.64 9.65 14.60 2.24 1.02 1.20 0.38 TYP. Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 Inches Max. 4.83 1.016 1.651 Min. 0.160 0.02 0.045 1.40 9.65 10.54 15.88 2.84 2.92 1.78 0.045 0.340 0.380 0.575 0.090 0.040 0.050 7 0.015 TYP. Max. 0.190 0.040 0.065 0.055 0.380 0.415 0.625 0.110 0.112 0.070 www.anpec.com.tw APM3011N Package Information Cont. TO-220 ( Reference JEDEC Registration TO-220) D R Q b E e b1 e1 L1 L H1 A c F Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Millimeters Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 J1 Inches Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 8 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 www.anpec.com.tw APM3011N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Average ramp-up rate(183 °C to Peak) Preheat temperature 125 ± 25 °C) Temperature maintained above 183 °C Time within 5 °C of actual peak temperature Peak temperature range Ramp-down rate Time 25 °C to peak temperature Convection or IR/ Convection 3 °C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0 °C or 235 +5/-0 °C 6 °C /second max. 6 minutes max. VPR 10 °C /second max. 60 seconds 215~ 219 °C or 235 +5/-0 °C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 9 pkg. thickness < 2.5mm and pkg. volume < Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM3011N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimension t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 Application A B C J 2.5± 0.5 Po T1 16.4 +0.3 -0.2 P1 TO-252 330±3 100 ± 2 13 ± 0. 5 2 ± 0.5 Application F D D1 TO-252 7.5 ± 0.1 1.5± 0.1 Application A TO-263 T2 P E 8 ± 0.1 1.75± 0.1 Ao W 16 + 0.3 16 - 0.1 Bo Ko t 1.5+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 B C J T1 T2 P E 13 ± 0. 5 2 ± 0.5 24 ± 4 2± 0.3 16 ± 0.1 1.75± 0.1 D D1 Po P1 Ao W 24 + 0.3 - 0.1 Bo 380±3 80 ± 2 Application F Ko t TO-263 11.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 10 www.anpec.com.tw APM3011N Cover Tape Dimensions Application TO- 252 TO- 263 Carrier Width 16 24 Cover Tape Width 13.3 21.3 Devices Per Reel 2500 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Mar., 2002 11 www.anpec.com.tw