100mA/50V Digital transistors(with built-in resistors) DTC043EM / DTC043EEB / DTC043EUB Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. Dimensions (Unit : mm) VMT3 Abbreviated symbol : 47 EMT3F (3) (1) Structure NPN epitaxial planar silicon transistor (Resistor built-in type) (2) Abbreviated symbol : 47 UMT3F 2.0 (1) 0.65 0.65 1.3 0.53 0.53 2.1 0.425 Applications Inverter, Interface, Driver 0.9 (3) 1.25 0.425 0.32 (2) 0.13 Abbreviated symbol : 47 Packaging specifications Package Packaging Type Type Code Basic ordering unit (pieces) DTC043EM DTC043EEB DTC043EUB Equivalent circuit VMT3 Taping T2L EMT3F Taping TL UMT3F Taping TL 8000 3000 3000 ○ - ○ - ○ OUT R1 IN R2 GND IN OUT GND R 1=R2=4.7k Absolute maximum (Ta=25C) Parameter Symbol Supply voltage VCC Input voltage VIN Collector current *1 Output current Power dissipation *2 Junction temperature Range of storage temperature M Limits(DTC043E□) EB UB 50 30 -10 100 100 IC(max) IO PD Tj Tstg 150 200 150 -55 to +150 Unit V V V mA mA mW C C *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.08 - Rev.A Data Sheet DTC043EM / DTC043EEB / DTC043EUB Electrical characteristics (Ta=25C) Parameter Symbol Input voltage Output voltage Min. Typ. VI(off) - - 0.5 V VCC=5V / IO=100uA VI(on) 2.2 - - V VO=0.3V / IO=5mA VO(on) - 0.05 0.15 V IO=5mA / II=0.5mA II - - 1.8 mA VI=5V Input current Max. Test Conditions Unit IO(off) - - 500 nA VCC=50V / VI=0V DC current gain GI 20 - - - VO=10V / IO=5mA Transition frequency * fT - 250 - MHz VCE=10V /IE=-5mA f=100MHz Input resistance R1 3.29 4.7 6.11 k Resistance ratio R2/R1 0.8 1.0 1.2 - Output current * Characteristics of built-in transistor Electrical characteristics curves 10 100 VCC=5V OUTPUT CURRENT : IO (mA) INPUT VOLTAGE : VI(on) (V) VO=0.3V Ta=-40ºC Ta=25ºC Ta=75ºC Ta=125ºC 10 1 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.1 0.01 0.001 0.1 0.1 1 10 0 100 0.5 1 1.5 2 2.5 Fig.1 Input Voltage vs. Output Current Fig.2 Input Voltage vs. Output Current (ON characteristics) (OFF characteristics) 1000 1 100 OUTPUT VOLTAGE : VO(on) (V) VO=10V DC CURRENT GAIN : GI 3 INPUT VOLTAGE : V I(off) (V) OUTPUT CURRENT : IO (mA) Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 10 1 IO/II=10 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta=-40ºC 0.01 0.001 0.1 1 10 100 0.1 OUTPUT CURRENT : IO (mA) Fig.3 DC Current Gain vs. Output Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 100 OUTPUT CURRNET : IO (mA) Fig.4 Output Voltage vs. Output Current 2/2 2011.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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