BYW82 - BYW86 FAST RECOVERY RECTIFIER DIODES VOLTAGE RANGE: 200 - 1000V CURRENT: 3.0 A Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics B A Low reverse current A High surge current loading Mechanical Data · Case : DO-15 Molded plastic · Epoxy : UL94V-O rate flame retardant · Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed · Polarity : Color band denotes cathode end · Mounting position : Any · Weight : 0.465 gram C D DO-15 Dim Min Max A 25.40 — B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm Maximum Ratings TA = 25C unless otherwise specified Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2*t–rating Junction and storage temperature range Test Conditions Type BYW82 BYW83 BYW84 BYW85 BYW86 tp=10ms, half sinewave x Tamb 65°C tp=20ms, half sinewave, Tj=175 °C I(BR)R=1A, Tj=175°C Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR Value 200 400 600 800 1000 100 18 3 1000 Unit V V V V V A A A W ER 20 mJ i2*t Tj=Tstg 40 –65...+175 A2*s °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 37.5mm 1 of 3 Symbol RthJA RthJA Value 25 70 Unit K/W K/W www.sunmate.tw Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery y time Reverse recovery charge Test Conditions IF=3A VR=VRRM VR=VRRM, Tj=100°C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms Type Symbol VF IR IR V(BR) CD trr trr Qrr Min Typ 0.1 5 65 2 3 6 Max 1.0 1 10 1600 100 4 6 10 Unit V mA mA V pF ms ms mC R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 4 I FAV– Average Forward Current ( A ) 40 30 20 l l 10 3 2 1 TL=constant 0 0 5 10 15 20 25 0 30 l – Lead Length ( mm ) 94 9563 VR = VR RM f=1kHz RthJA=25K/W L=10mm 0 80 120 160 200 Tamb – Ambient Temperature ( °C ) 94 9564 Figure 1. Max. Thermal Resistance vs. Lead Length 40 Figure 3. Max. Average Forward Current vs. Ambient Temperature VR = VR RM f=1kHz RthJA=70K/W 1.6 I R – Reverse Current ( mA ) I FAV– Average Forward Current ( A ) 1000 2.0 PCB 1.2 0.8 0.4 Scattering Limit 100 0 1 VR = VR RM 0.1 0 94 9565 10 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 0 94 9566 Figure 2. Max. Average Forward Current vs. Ambient Temperature 2 of 3 40 80 120 160 200 Tj – Junction Temperature ( °C ) Figure 4. Reverse Current vs. Junction Temperature www.sunmate.tw 100 80 CD – Diode Capacitance ( pF ) Tamb= 175°C IF – Forward Current ( A ) Scattering Limit 10 1 Tamb= 25°C 0.1 0.01 40 20 0 0 0.6 1.2 1.8 2.4 3.0 0.1 VF – Forward Voltage ( V ) 94 9567 1 100 10 VR – Reverse Voltage ( V ) 94 9569 Figure 5. Max. Forward Current vs. Forward Voltage Z thp – Thermal Resistance for Pulse Cond. (K/W) 60 Figure 6. Typ. Diode Capacitance vs. Reverse Voltage 1000 VR RM=1000V 100 94 9568 RthJA=70K/W tp/T=0.5 Tamb= 25°C tp/T=0.2 10 tp/T=0.1 45°C tp/T=0.05 tp/T=0.01 tp/T=0.02 1 10–4 70°C 60°C 100°C 10–3 10–2 10–1 100 101 tp – Pulse Length ( s ) 10–1 100 101 IFRM – Repetitive Peak Forward Current ( A ) Figure 7. Thermal Response 3 of 3 www.sunmate.tw