Central CMPT5087 Pnp silicon transistor Datasheet

Central
CMPT5086
CMPT5087
TM
Semiconductor Corp.
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
50
50
3.0
50
350
UNITS
V
V
V
mA
mW
TJ,Tstg
ΘJA
-65 to +150
357
oC
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
TEST CONDITIONS
VCB=10V
VCB=35V
IC=100µA
IC=1.0mA
IE=100µA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
CMPT5086
MIN MAX
10
50
50
50
3.0
0.30
0.85
150
500
150
150
40
4.0
150 600
178
CMPT5087
MIN MAX
10
50
50
50
3.0
0.30
0.85
250
800
250
250
40
4.0
250
900
UNITS
nA
nA
V
V
V
V
V
MHz
pF
SYMBOL
NF
NF
TEST CONDITIONS
VCE=5.0V, IC=20mA, RS=10kΩ
f=10Hz to 15.7kHz
VCE=5.0V, IC=100µA, RS=3.0kΩ,
f=1.0kHz
CMPT5086
MIN MAX
3.0
3.0
CMPT5087
MIN MAX
2.0
2.0
UNITS
dB
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
179
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