FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.8 V logic Applications • Low gate charge (13nC typical) • Power management • High performance trench technology for extremely low RDS(ON) • Load switch • Low profile TSSOP-8 package D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain–Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –4.5 A PD Power Dissipation for Single Operation – Continuous (Note 1a) – Pulsed TJ, TSTG –40 (Note 1a) 1.3 (Note 1b) 0.6 W –55 to +150 °C (Note 1a) 87 °C/W (Note 1b) 133 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 262P FDW262P 13’’ 16mm 3000 units 2001 Fairchild Semiconductor Corporation FDW262P Rev C(W) FDW262P June 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA –1.5 V On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = –250 µA, Referenced to 25°C –14 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = –250 µA ID= –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –4.5 A VGS = –2.5 V, ID = –3.7 A VGS = –1.8 V, ID = –3 A VGS=–4.5 V, ID =–4.5A, TJ=125°C –0.4 –20 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –4.5 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.8 2.5 37 50 77 48 mV/°C 47 65 100 65 mΩ A 16 S 1193 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 193 pF 96 pF (Note 2) VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 11 20 ns 9 18 ns ns td(off) Turn–Off Delay Time 36 57 tf Turn–Off Fall Time 19 34 ns Qg Total Gate Charge 13 18 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –4.5 A, 2.5 nC 3.6 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.1 A Voltage –0.7 (Note 2) –1.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper. b) 133°C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW262P Rev C(W) FDW262P Electrical Characteristics FDW262P Typical Characteristics 40 2.2 -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) -3.0V 30 -2.5V 20 -2.0V 10 -1.8V 0 2 VGS = - 2.0V 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.0V 0.8 0 1 2 3 4 5 0 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.15 ID = -4.5A VGS = - 4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.2 1.1 1 0.9 0.8 ID = -2.3A 0.12 0.09 TA = 125oC 0.06 TA = 25oC 0.03 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) -4.5V 1 25oC 15 125oC 10 5 0 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW262P Rev C(W) FDW262P Typical Characteristics 2000 VDS = -5V ID = -4.5A f = 1 MHz VGS = 0 V -10V 4 1600 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 1200 800 COSS 400 CRSS 0 0 0 4 8 12 16 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 P(pk), PEAK TRANSIENT POWER (W) 50 100µs RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 10s DC 1 VGS = -4.5V SINGLE PULSE RθJA = 133oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 133°C/W TA = 25°C 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 133 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW262P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3