BLF574XR; BLF574XRS
Power LDMOS transistor
Rev. 1 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF574 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1.
Application information
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
CW
225
50
600
23.5
74.5
pulsed RF
225
50
600
24
74.7
Test signal
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF574XR (SOT1214A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
3
5
4
[1]
source
2
sym117
BLF574XRS (SOT1214B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
3
5
[1]
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
Version
BLF574XR
-
flanged ceramic package; 2 mounting holes; 4 leads
SOT1214A
BLF574XRS
-
earless flanged ceramic package; 4 leads
SOT1214B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
110
V
VGS
gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
[1]
BLF574XR_BLF574XRS
Product data sheet
Conditions
[1]
Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
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BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Conditions
thermal resistance from junction to case
[1]
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
Tj = 150 C
[1][2]
Typ
Unit
0.18
K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.75 mA
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 275 mA
1.25
1.7
2.25
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
38
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 9.625 A
-
0.15
-
Table 7.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
2.4
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
210 -
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
94
pF
-
Table 8.
RF characteristics
Test signal: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 100 mA; Tcase = 25 C; unless
otherwise specified; in a class-AB production test circuit.
BLF574XR_BLF574XRS
Product data sheet
Symbol Parameter
Conditions
Min
Gp
power gain
PL = 600 W
21.65 23.5
RLin
input return loss
PL = 600 W
-
D
drain efficiency
PL = 600 W
70
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
Typ
Max
Unit
-
dB
17
13
dB
74.5
-
%
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BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
DDD
&RVV
S)
9'6 9
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF574XR and BLF574XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 600 W pulsed; f = 225 MHz.
7.2 Impedance information
drain 1
gate 1
Zi
ZL
gate 2
drain 2
001aan207
Fig 2.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 600 W.
BLF574XR_BLF574XRS
Product data sheet
f
Zi
ZL
(MHz)
()
()
225
4.67 j5.47
5.66 + j2.05
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Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
4 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
7.3 Test circuit
PP
PP
&
&
&
&
&
PP
&
&
&
&
/
/
5
7
5
&
&
&
&
&
&
&
&
&
&
&
&
&
5
7
&
5
/
&
&
&
5
/
&
&
PP
PP
PP
PP
DDD
Printed-Circuit Board (PCB) Rogers 5880: r = 2.2 F/m; thickness = 0.79 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 3.
Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see Figure 3.
Component
BLF574XR_BLF574XRS
Product data sheet
Description
Value
Remarks
C1, C2, C3, C10, multilayer ceramic chip capacitor 1 nF
C11, C17, C18
[1]
C4, C5
multilayer ceramic chip capacitor 62 pF
[1]
C6, C7
multilayer ceramic chip capacitor 51 pF
[1]
C8, C9
multilayer ceramic chip capacitor 4.7 F, 50 V
C12, C13
multilayer ceramic chip capacitor 33 pF
[2]
C14, C16
multilayer ceramic chip capacitor 43 pF
[1]
C15
multilayer ceramic chip capacitor 20 pF
[1]
C19, C20
multilayer ceramic chip capacitor 4.7 F; 100 V
C21, C22
electrolytic capacitor
C23
multilayer ceramic chip capacitor 5 12 pF
[3]
C24, C25
multilayer ceramic chip capacitor 4 16 pF
[3]
C26, C27
multilayer ceramic chip capacitor 2 510 pF
[3]
C28
multilayer ceramic chip capacitor 56 pF
[1]
L1, L2
2 turn 1 mm copper wire
D = 3 mm,
length = 3 mm
L3, L4
3 turn 1 mm copper wire
D = 3 mm,
length = 3 mm
R1
chip resistor
0
470 F; 63 V
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Rev. 1 — 20 June 2013
Kemet
C1210X475K5RAC-T4
© NXP B.V. 2013. All rights reserved.
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BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
Table 10. List of components …continued
For test circuit see Figure 3.
Component
Description
Value
Remarks
R2, R3
chip resistor
10
SMD 1206
R4, R5
metal film resistor
2 , 0.6 W
T1, T2
semi rigid coax
50 , 58 mm
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
American Technical Ceramics type 100A or capacitor of same quality.
[3]
American Technical Ceramics type 800B or capacitor of same quality.
HUBER+SUHNER
EZ-141-AL-TP-M17
7.4 Graphical data
The following figures are measured in a class-AB production test circuit.
7.4.1 1-Tone CW
DDD
DDD
Ș'
*S
G%
3/
G%P
,GHDO3/
*S
Ș'
3/
3/ :
VDS = 50 V; IDq = 100 mA; f = 225 MHz.
3L G%P
VDS = 50 V; IDq = 100 mA; f = 225 MHz.
(1) PL(1dB) = 57.56 dBm (570 W)
(2) PL(3dB) = 58.13 dBm (649 W)
Fig 4.
Power gain and drain efficiency as function of
output power; typical values
BLF574XR_BLF574XRS
Product data sheet
Fig 5.
Output power as a function of input power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
6 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
DDD
DDD
*S
G%
Ș'
3/ :
VDS = 50 V; f = 225 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(3) IDq = 200 mA
(4) IDq = 300 mA
(4) IDq = 300 mA
(5) IDq = 400 mA
(5) IDq = 400 mA
(6) IDq = 500 mA
(6) IDq = 500 mA
Power gain as a function of output power;
typical values
BLF574XR_BLF574XRS
Product data sheet
3/ :
VDS = 50 V; f = 225 MHz.
(1) IDq = 50 mA
Fig 6.
Fig 7.
Drain efficiency as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
7 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
DDD
DDD
*S
G%
Ș'
3/ :
IDq = 100 mA; f = 225 MHz.
(1) VDS = 25 V
(2) VDS = 30 V
(2) VDS = 30 V
(3) VDS = 35 V
(3) VDS = 35 V
(4) VDS = 40 V
(4) VDS = 40 V
(5) VDS = 45 V
(5) VDS = 45 V
(6) VDS = 50 V
(6) VDS = 50 V
Power gain as a function of output power;
typical values
BLF574XR_BLF574XRS
Product data sheet
3/ :
IDq = 100 mA; f = 225 MHz.
(1) VDS = 25 V
Fig 8.
Fig 9.
Drain efficiency as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
8 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
8. Package outline
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BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
9 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
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Fig 11. Package outline SOT1214B
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
10 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
XR
eXtremely Rugged
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF574XR_BLF574XRS v.1
20130620
Product data sheet
-
-
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
11 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF574XR_BLF574XRS
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
12 of 14
BLF574XR; BLF574XRS
NXP Semiconductors
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
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13 of 14
NXP Semiconductors
BLF574XR; BLF574XRS
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 June 2013
Document identifier: BLF574XR_BLF574XRS