AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A G • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature Coefficient • Soft Recovery Co-Pak Diode • Tight parameter distribution • • Lead-Free, RoHS Compliant Automotive Qualified * tSC ≥ 5μs, TJ(max) = 175°C E VCE(on) typ. = 1.70V n-channel C C E C G Benefits • High Efficiency in a wide range of applications G C TO-247AC AUIRGP4066D1 • Suitable for a wide range of switching frequencies due to Low V CE (ON) and Low Switching losses G G ate • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation E TO-247AD AUIRGP4066D1-E C C ollector E Em itter • Low EMI Ordering Information Base part number Package Type AUIRGP4066D1 TO-247AC Standard Pack Form Tube AUIRGP4066D1-E TO-247AD Tube Complete Part Number Quantity 25 AUIRGP4066D1 25 AUIRGP4066D1-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units V Continuous Collector Current 600 140 IC @ TC = 100°C Continuous Collector Current 90 INOMINAL Nominal Current 75 ICM Pulse Collector Current VGE = 15V 225 ILM Clamped Inductive Load Current VGE = 20V IF NOMINAL Diode Nominal Current IFM Diode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage ±20 Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 454 PD @ TC = 100°C Maximum Power Dissipation 227 TJ Operating Junction and TST G Storage Temperature Range VCES Collector-to-Emitter Voltage IC @ TC = 25°C d g c 300 75 A g d 300 V W -55 to +175 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Thermal Resistance Junction-to-Case-(each IGBT) Min. Typ. Max. Units ––– ––– 0.33 °C/W ––– ––– 0.53 RθJC (Diode) f Thermal Resistance Junction-to-Case-(each Diode)f RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– RθJC (IGBT) *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ΔV(B R)CES /ΔT J T emperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. Typ. Max. Units 600 — — V — 0.30 — V/°C — 1.70 2.1 — 2.0 — — 2.1 — VGE(th) Gate Threshold Voltage 4.0 — 6.5 Δ VGE(t h)/Δ T J Threshold Voltage temp. coefficient — -13 — Conditions VGE = 0V, IC = 200μA f VGE = 0V, IC = 15mA (25°C-175°C) d d = 175°Cd IC = 75A, VGE = 15V, TJ = 25°C V IC = 75A, VGE = 15V, TJ = 150°C IC = 75A, VGE = 15V, TJ V VCE = VGE, I C = 2.1mA mV/°C VCE = VGE, I C = 20mA (25°C - 175°C) gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 25μs ICES Collector-to-Emitter Leakage Current — 3.0 200 μA VGE = 0V, VCE = 600V — 10 — mA VFM Diode Forward Voltage Drop — 1.60 1.77 V — 1.54 — IGES Gate-to-Emitter Leakage Current — — ±100 VGE = 0V, VCE = 600V, TJ = 175°C IF = 75A IF = 75A, TJ = 175°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. — 150 225 Qg Total Gate Charge (turn-on) Qge Gate-to-Emitter Charge (turn-on) — 40 60 Qgc Gate-to-Collector Charge (turn-on) — 60 90 Eon Turn-On Switching Loss — 4240 5190 Eoff Turn-Off Switching Loss — 2170 3060 Etotal Total Switching Loss — 6410 8250 td(on) Turn-On delay time — 50 70 tr Rise time — 80 100 td(off) Turn-Off delay time — 200 230 tf Fall time — 60 80 Eon Turn-On Switching Loss — 6210 — Eoff Turn-Off Switching Loss — 2815 — Etotal Total Switching Loss — 9025 — td(on) Turn-On delay time — 45 — tr Rise time — 70 — td(off) Turn-Off delay time — 240 — tf Fall time — 80 — Cies Input Capacitance — 4470 — Coes Output Capacitance — 350 — Cres Reverse Transfer Capacitance — 140 — Units Conditions IC = 75A nC VGE = 15V VCC = 400V IC = 75A, VCC = 400V, VGE = 15V μJ RG = 10Ω, L = 100μH, TJ = 25°C E nergy los s es include tail & diode revers e recovery IC = 75A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 100μH TJ = 25°C IC = 75A, VCC = 400V, VGE=15V μJ RG=10Ω, L=100μH, TJ = 175°C E nergy los s es include tail & diode revers e recovery IC = 75A, VCC = 400V, VGE=15V ns RG=10Ω, L=100μH TJ = 175°C VGE = 0V pF VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 300A RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Erec VCC = 480V, Vp 600V FULL SQUARE Rg = 10Ω, VGE = +20V to 0V VCC = 400V, Vp 600V 5 — — μs Reverse Recovery Energy of the Diode — 680 — μJ TJ = 175°C trr Diode Reverse Recovery Time — 240 — ns VCC = 400V, IF = 75A Irr Peak Reverse Recovery Current — 50 — A VGE = 15V, Rg = 10Ω, L =100μH Rg = 10Ω, VGE = +15V to 0V Notes: VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 50Ω, tested in production ILM ≤ 400A. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur. 2 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E 150 500 125 400 Ptot (W) IC (A) 100 75 50 300 200 100 25 0 25 50 75 100 125 150 0 175 25 50 75 125 150 175 T C (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 10μsec 100 100 IC (A) 100μsec IC (A) 100 1msec 10 DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 300 250 250 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 150 150 100 100 50 50 0 0 0 2 4 6 8 10 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60μs 3 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 ICE (A) ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 300 200 1000 www.irf.com © 2013 International Rectifier 0 2 4 6 8 10 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60μs May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E 300 300 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 250 200 IF (A) ICE (A) 200 -40°C 25°C 175°C 250 150 150 100 100 50 50 0 0 0 2 4 6 8 0.0 10 1.0 2.0 VCE (V) 20 20 18 18 16 16 14 14 ICE = 38A ICE = 75A 10 ICE = 150A 8 12 ICE = 38A ICE = 75A 10 ICE = 150A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) 20 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 300 20 IC, Collector-to-Emitter Current (A) 18 16 14 VCE (V) 15 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C 12 ICE = 38A ICE = 75A 10 8 ICE = 150A 6 4 2 250 T J = 25°C T J = 175°C 200 150 100 50 0 0 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C 4 4.0 Fig. 8 - Typ. Diode Forward Characteristics tp = ≤60μs VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60μs 12 3.0 VF (V) www.irf.com © 2013 International Rectifier 4 6 8 10 12 14 16 18 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = ≤60μs May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E 18000 1000 16000 tdOFF Swiching Time (ns) 14000 Energy (μJ) 12000 EON 10000 8000 6000 4000 tF 100 tR tdON EOFF 2000 0 10 0 25 50 75 100 125 150 0 50 100 150 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 100μH; VCE = 400V, RG = 10Ω; VGE = 15V 10000 15000 13000 Swiching Time (ns) Energy (μJ) 11000 tdOFF 1000 EON 9000 7000 5000 tF 100 tR EOFF tdON 3000 10 1000 0 25 50 75 0 100 20 60 80 100 120 R G (Ω) Rg (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 100μH; VCE = 400V, ICE = 75A; VGE = 15V 55 60 55 RG = 10Ω 50 RG = 22Ω 50 45 45 RG = 47Ω IRR (A) IRR (A) 40 40 RG = 100Ω 35 40 35 30 30 25 25 20 20 40 60 80 100 120 140 160 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C 5 www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 RG (Ω) Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E 55 18000 16000 150A 47Ω 14000 22Ω 12000 45 QRR (μC) IRR (A) 50 10000 40 75A 100Ω 8000 10Ω 6000 35 38A 4000 2000 30 400 500 600 200 700 400 600 800 1000 diF /dt (A/μs) diF /dt (A/μs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C 800 20 3500 RG = 10Ω RG = 22Ω RG = 47Ω 3000 600 Isc Time (μs) 2000 10 400 5 200 Current (A) RG = 100Ω 2500 Energy (μJ) Tsc 15 1500 1000 0 0 500 25 75 125 8 175 10 12 18 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 16 10000 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 16 VGE (V) IF (A) 1000 Coes 100 Cres 10 VCES = 400V VCES = 300V 14 12 10 8 6 4 2 0 0 100 200 300 400 500 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 6 14 www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 120 140 160 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 75A; L = 485μH May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 R3 R3 R4 R4 Ri (°C/W) τC τ τ2 τ1 τ3 τ2 τ3 τ4 τ4 τi (sec) 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R2 R2 0.09294 0.0182 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 τJ R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ1 τ2 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 0.001 1E-005 0.0001 0.001 τ4 τ4 τi (sec) 0.012 0.000034 0.163 0.000390 0.215 0.005990 0.139 0.033585 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Ri (°C/W) R4 R4 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E L L VC C D UT 0 80 V DU T 4 80V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T 4x DC L - 5V 360V DU T / D RIVER DUT VCC Rg Fig.C.T.3 - S.C. SOA Circuit R= Fig.C.T.4 - Switching Loss Circuit VCC ICM C force 400μH D1 10K C sense DUT VCC G force DUT 0.0075μ Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E 700 500 400 80 400 300 60 200 40 10% ICE 300 60 40 10% ICE 100 20 0 0 0 Eon Loss Eof f Loss -100 -0.4 -100 -0.4 -20 -0.2 0 0.2 0.4 0.6 -20 -0.2 QRR t RR 0.4 0.6 700 700 600 600 500 500 VCE 400 Peak IRR 300 400 300 ICE 200 200 100 100 0 0 -100 0.00 0.20 0.40 0.60 0.80 time (μS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 9 0.2 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 Vce (V) VF (V) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 -0.20 0 time (μs) time(μs) 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 -40 -50 -60 80 90% ICE 200 20 0 100 www.irf.com © 2013 International Rectifier Ice (A) 100 120 TEST CURRENT I CE (A) 100 90% ICE VCE (V) 600 ICE (A) 120 500 140 tr tf 600 VCE (V) 700 140 -100 -3 0 3 6 9 12 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUP4066D1 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number AUP4066D1-E YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E † Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level TO-247AC N/A TO-247AD ESD Machine Model Class M4 (+/-425V) AEC-Q101-002 Human Body Model Class H2 (+/-4000V) AEC-Q101-001 †† Charged Device Model Class C5 (+/-1125V) AEC-Q101-005 †† Yes RoHS Compliant † †† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Highest passing voltage 12 www.irf.com © 2013 International Rectifier May 02, 2013 AUIRGP4066D1/AUIRGP4066D1-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. 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