AP9466GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Single Drive Requirement
▼ Fast Switching Characteristics
BVDSS
40V
RDS(ON)
13.5mΩ
ID
G
40A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
40
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
25
A
1
IDM
Pulsed Drain Current
150
A
PD@TC=25℃
Total Power Dissipation
36.7
W
Linear Derating Factor
0.29
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200727071-1/4
AP9466GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min.
Typ.
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=26A
-
-
13.5
mΩ
VGS=4.5V, ID=16A
-
-
21
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=26A
-
24.5
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=26A
-
13.5
22
nC
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
2.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.4
-
nC
VDS=20V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=26A
-
73
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=0.77Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=26A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9466GS
150
80
o
T C =25 C
120
10V
7.0V
5.0V
T C =150 o C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
60
90
5.0V
4.5V
60
4.5V
40
20
V G =3.0V
30
V G =3.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
2.2
I D =26A
V G =10V
I D =26A
T C =25 o C
Normalized RDS(ON)
1.8
RDS(ON) (mΩ)
16
12
1.4
1.0
8
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2
25
1.8
20
1.6
VGS(th) (V)
IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
15
T j =150 o C
0
T j , Junction Temperature ( o C)
T j =25 o C
1.4
10
1.2
5
1
0
0.8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9466GS
f=1.0MHz
14
10000
I D =26A
10
V DS =20V
V DS =24V
V DS =32V
8
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
12
Coss
Crss
6
100
4
2
10
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
10us
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
10
1ms
10ms
100ms
DC
o
1
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
9466GS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence