BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. (3) (2) (1) Q2 Q1 Features • Pb−Free Package is Available (4) (5) (6) MAXIMUM RATINGS − NPN Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847 BC848 VCEO 65 45 30 V Collector-Base Voltage BC846 BC847 BC848 VCBO 80 50 30 V VEBO 6.0 V IC 100 mAdc MARKING DIAGRAM 6 Emitter−Base Voltage Collector Current − Continuous SOT−363 CASE 419B STYLE 1 1 1 xx = Device Code d = Date Code MAXIMUM RATINGS − PNP Rating Collector-Emitter Voltage Collector-Base Voltage Symbol Value Unit BC846 BC847 BC848 VCEO −65 −45 −30 V BC846 BC847 BC848 VCBO −80 −50 −30 V VEBO −5.0 V IC −100 mAdc Emitter−Base Voltage Collector Current − Continuous XXd ORDERING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Device Mark Package Shipping† BC846BPDW1T1 BB SOT−363 3000 Units/Reel BC847BPDW1T1 BF SOT−363 3000 Units/Reel BC847BPDW1T1G BF SOT−363 3000 Units/Reel (Pb−Free) BC847CPDW1T1 BG SOT−363 3000 Units/Reel BC848CPDW1T1 BL SOT−363 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 380 250 mW 3.0 mW/°C RJA 328 °C/W TJ, Tstg −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR−5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 3 1 Publication Order Number: BC846BPDW1T1/D BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 − − − − − − 80 50 30 − − − − − − 80 50 30 − − − − − − 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 BC846B, BC847B BC847C, BC848C − − 150 270 − − BC846B, BC847B BC847C, BC848C 200 420 290 520 475 800 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) Collector −Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector −Base Breakdown Voltage (IC = 10 A) Emitter −Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847B Only BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 pF − − 10 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 NF dB BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 BC846B, BC847B BC847C, BC848C − − 150 270 − − BC846B, BC847B BC847C, BC848C 200 420 290 520 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 A, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 A) Emitter −Base Breakdown Voltage (IE = −1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = −10 A, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 3 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL NPN CHARACTERISTICS − BC846 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 100 200 50 100 200 −1.4 −1.8 VB for VBE 50 −55°C to 125°C −2.2 −2.6 −3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient 40 2.0 50 −1.0 Figure 3. Collector Saturation Region 4.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 4 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL PNP CHARACTERISTICS — BC846 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (AMP) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage −2.0 −1.6 −1.2 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 10. Base−Emitter Temperature Coefficient 40 6.0 −55°C to 125°C −2.2 Figure 9. Collector Saturation Region 20 VB for VBE VCE = −5.0 V 500 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) −50 −100 Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 5 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 14. “Saturation” and “On” Voltages 2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Normalized DC Current Gain TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 100 Figure 16. Base−Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 15. Collector Saturation Region 7.0 50 70 100 40 Figure 17. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 18. Current−Gain − Bandwidth Product http://onsemi.com 6 50 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 22. Base−Emitter Temperature Coefficient f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region C, CAPACITANCE (pF) −100 −50 Figure 20. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 19. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −20 −30 −40 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 23. Capacitances Figure 24. Current−Gain − Bandwidth Product http://onsemi.com 7 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 25. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. −200 IC, COLLECTOR CURRENT (mA) 1s 3 ms −100 −50 −10 −5.0 −2.0 −1.0 TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 26. Active Region Safe Operating Area http://onsemi.com 8 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series PACKAGE DIMENSIONS SOT−363/SC−88 CASE 419B−02 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B M J C K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 N H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 For additional information, please contact your local Sales Representative. BC846BPDW1T1/D