CYStech Electronics Corp. Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 1/3 General Purpose PNP Digital Transistors (Built-in Resistors) DTA114TS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTC114TS3 Equivalent Circuit DTA114TS3 SOT-323 R1=10 kΩ B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC (Max) Pd Tj Tstg -50 -50 -5 -100 200 150 -55~+150 V V V mA mW °C °C DTA114TS3 CYStek Product Specification Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 2/3 CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol Min. Typ. Max. Unit Test Conditions VCBO -50 - - V IC=-50uA VCEO -50 - - V IC=-1mA VEBO -5 - - V IE=-50uA ICBO IEBO - - -0.5 -0.5 uA uA VCB=-50V VEB=-4V VCE(sat) - 0.1 -0.3 V IC=-10mA, IB=-1mA hFE R fT 100 7 - 10 250 600 VCE=-5V, IC=-1mA 13 kΩ MHz VCE=-10V, IE=-5mA, f=100MHz* * Transition frequency of the device Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE(SAT)@IC=10IB HFE@VCE=5V 10 10 0.1 1 10 100 100 1 10 100 Collector Current---IC(mA) Collector Current---IC(mA) PD - Ta Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) DTA114TS3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C254S3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 3/3 SOT-323 Dimension 3 Marking: A Q A1 1 C Lp 2 TE 6E detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Pastic Surface Mounted Package CYStek Package Code: S3 θ He 0 1 v A Style: Pin 1.Base 2.Emitter 3.Collector 2 mm scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 27.002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTA114TS3 CYStek Product Specification