BCD AP2125K-2.5TRG1 300ma high speed, extremely low noise cmos ldo regulator Datasheet

Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
General Description
Features
The AP2125 series are 300mA, positive voltage regulator ICs fabricated by CMOS process.
·
·
Each of these ICs is equipped with a voltage reference,
an error amplifier, a resistor network for setting output
voltage, a chip enable circuit, a current limit circuit and
OTSD (over temperature shut down) circuit to prevent
the IC from over current and over temperature.
·
·
·
·
·
·
·
The AP2125 series have features of high ripple rejection, low dropout voltage, low noise, high output voltage accuracy and low current consumption which
make them ideal for use in various battery-powered
apparatus.
Excellent Ripple Rejection: 70dB Typical (1.8V
Version)
Low Dropout Voltage: 65mV (IOUT=100mA,
3.3V Version)
Low Standby Current: 0.01µA Typical
Low Quiescent Current: 60µA Typical
Extremely Low Noise: 50µVrms Typical
Maximum Output Current: 300mA (Min.)
High Output Voltage Accuracy: ±2%
Compatible with Low ESR Ceramic Capacitor
Excellent Line/Load Regulation
Applications
The AP2125 have 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.15V
and 4.2V fixed voltage versions.
·
·
·
·
·
·
These ICs are available in tiny SC-70-5 and SC-82
packages as well as industry standard SOT-23-3 and
SOT-23-5 packages.
SOT-23-3
AP2125
SOT-23-5
CDMA/GSM Cellular Handsets
Battery-powered Equipments
Laptops, Palmtops, Notebook Computers
Hand-held Instruments
PCMCIA Cards
Portable Information Appliances
SC-70-5
SC-82
Figure 1. Package Types of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Pin Configuration
N Package
(SOT-23-3)
K/KS Package
(SOT-23-5/SC-70-5)
KC Package
(SC-82)
VIN
3
1
2
GND
VOUT
VIN
1
GND
2
CE
3
5
VOUT
4
NC
CE
1
4
VIN
GND
2
3
VOUT
Figure 2. Pin Configuration of AP2125 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOT-23-3
SOT-23-5/
SC-70-5
SC-82
3
1
4
VIN
Input voltage
1
2
2
GND
Ground
3
1
CE
Active high enable input pin. Logic high=enable, logic low=shutdown
NC
No connection
4
2
5
3
VOUT
Regulated output voltage
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Functional Block Diagram
Shutdown
and
Logic Control
3
CE
VIN
3 (1)
Shutdown
and
Logic Control
1 (4)
VIN
VREF
VREF
MOS Driver
MOS Driver
2
5 (3)
VOUT
Current Limit
and
Thermal
Protection
Current Limit
and
Thermal Protection
1
2 (2)
GND
VOUT
GND
A(B)
A SOT-23-5/SC-70-5
SOT-23-3
B
SC-82
Figure 3. Functional Block Diagram of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Ordering Information
AP2125
E1: Lead Free
G1: Green
Circuit Type
TR: Tape and Reel
Package
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
2.8: Fixed Output 2.8V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
4.15: Fixed Output 4.15V
4.2: Fixed Output 4.2V
N:
SOT-23-3
K:
SOT-23-5
KS: SC-70-5
KC: SC-82
Package
SOT-23-3
SOT-23-5
Temperature
Range
-40 to 85oC
oC
-40 to 85
Part Number
Marking ID
Lead Free
Green
AP2125N-1.8TRE1
AP2125N-1.8TRG1
EJ2
GJ2
Tape & Reel
AP2125N-2.5TRE1
AP2125N-2.5TRG1
EJ4
GJ4
Tape & Reel
AP2125N-2.8TRE1
AP2125N-2.8TRG1
EJ5
GJ5
Tape & Reel
AP2125N-3.0TRE1
AP2125N-3.0TRG1
EJ6
GJ6
Tape & Reel
AP2125N-3.3TRE1
AP2125N-3.3TRG1
EJ7
GJ7
Tape & Reel
AP2125N-4.2TRE1
AP2125N-4.2TRG1
EJ3
GJ3
Tape & Reel
AP2125K-1.8TRE1
AP2125K-1.8TRG1
ECB
GCB
Tape & Reel
AP2125K-2.5TRE1
AP2125K-2.5TRG1
ECD
GCD
Tape & Reel
AP2125K-2.8TRE1
AP2125K-2.8TRG1
ECE
GCE
Tape & Reel
AP2125K-3.0TRE1
AP2125K-3.0TRG1
ECF
GCF
Tape & Reel
AP2125K-3.3TRE1
AP2125K-3.3TRG1
ECG
GCG
Tape & Reel
GCJ
Tape & Reel
AP2125K-4.2TRE1
AP2125K-4.2TRG1
ECC
GCC
Tape & Reel
AP2125KS-1.8TRE1
AP2125KS-1.8TRG1
26
B6
Tape & Reel
AP2125KS-2.5TRE1
AP2125KS-2.5TRG1
35
C5
Tape & Reel
AP2125KS-2.8TRE1
AP2125KS-2.8TRG1
27
B7
Tape & Reel
AP2125KS-3.0TRE1
AP2125KS-3.0TRG1
36
C6
Tape & Reel
AP2125KS-3.3TRE1
AP2125KS-3.3TRG1
28
B8
Tape & Reel
AP2125KS-4.2TRE1
AP2125KS-4.2TRG1
34
C4
Tape & Reel
AP2125KC-1.8TRE1
AP2125KC-1.8TRG1
91
T1
Tape & Reel
AP2125KC-2.5TRE1
AP2125KC-2.5TRG1
96
T6
Tape & Reel
AP2125KC-2.8TRE1
AP2125KC-2.8TRG1
92
T2
Tape & Reel
AP2125KC-3.0TRE1
AP2125KC-3.0TRG1
97
T7
Tape & Reel
AP2125KC-3.3TRE1
AP2125KC-3.3TRG1
93
T3
Tape & Reel
AP2125KC-4.2TRE1
AP2125KC-4.2TRG1
95
T5
Tape & Reel
AP2125K-4.15TRG1
SC-70-5
SC-82
-40 to 85oC
-40 to 85oC
Green
Packing Type
Lead Free
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
6.5
V
Enable Input Voltage
VCE
-0.3 to VIN+0.3
V
Output Current
IOUT
450
mA
TJ
150
oC
TSTG
-65 to 150
oC
TLEAD
260
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
θJA
Thermal Resistance
o
C
SOT-23-3
200
SOT-23-5
200
SC-70-5
300
SC-82
300
oC/W
ESD (Human Body Model)
ESD
6000
V
ESD (Machine Model)
ESD
400
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
VOUT+0.5V
6
V
Operating Ambient Temperature Range
TA
-40
85
oC
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics
AP2125-1.8 Electrical Characteristics
(VIN=2.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=2.8V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
1.764
1.8
1.836
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=1.76V
300
360
mA
Load Regulation
VRLOAD
VIN=2.8V
1mA≤IOUT≤300mA
6
mV
Line Regulation
VRLINE
2.8V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
10
12
IOUT=100mA
100
120
IOUT=300mA
300
360
VIN=2.8V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=2.8V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=2.8V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
70
dB
f=1KHz
70
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
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o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-2.5 Electrical Characteristics
(VIN=3.5V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=3.5V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
2.45
2.5
2.55
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.45V
300
360
mA
Load Regulation
VRLOAD
VIN=3.5V
1mA≤IOUT≤300mA
10
mV
Line Regulation
VRLINE
3.5V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=3.5V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=3.5V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=3.5V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
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o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-2.8 Electrical Characteristics
(VIN=3.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=3.8V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
2.744
2.8
2.856
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.74V
300
360
mA
Load Regulation
VRLOAD
VIN=3.8V
1mA≤IOUT≤300mA
11
mV
Line Regulation
VRLINE
3.8V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=3.8V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=3.8V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=3.8V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
V
o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.0 Electrical Characteristics
(VIN=4.0V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=4.0V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
2.94
3.0
3.06
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=2.94V
300
360
mA
Load Regulation
VRLOAD
VIN=4.0V
1mA≤IOUT≤300mA
12
mV
Line Regulation
VRLINE
4.0V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=4.0V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=4.0V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=4.0V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
V
o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.3 Electrical Characteristics
(VIN=4.3V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=4.3V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
3.234
3.3
3.366
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=3.23V
300
360
mA
Load Regulation
VRLOAD
VIN=4.3V
1mA≤IOUT≤300mA
13
mV
Line Regulation
VRLINE
4.3V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=4.3V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=4.3V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=4.3V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
V
o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-4.15 Electrical Characteristics
(VIN=5.15V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=5.15V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
4.067
4.15
4.233
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=4.06V
300
360
mA
Load Regulation
VRLOAD
VIN=5.15V
1mA≤IOUT≤300mA
13
mV
Line Regulation
VRLINE
5.15V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=5.15V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=5.15V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=5.15V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
V
o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-4.2 Electrical Characteristics
(VIN=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Symbol
VOUT
Conditions
VIN=5.2V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
4.116
4.2
4.284
V
6
V
VIN
IOUT(MAX)
VIN-VOUT=1V, VOUT=4.12V
300
360
mA
Load Regulation
VRLOAD
VIN=5.2V
1mA≤IOUT≤300mA
13
mV
Line Regulation
VRLINE
5.2V≤VIN≤6V
IOUT=30mA
1
mV
Dropout Voltage
VDROP
Quiescent Current
IQ
IOUT=10mA
6.5
10
IOUT=100mA
65
100
IOUT=300mA
200
300
VIN=5.2V, IOUT=0mA
60
90
µA
0.01
1.0
µA
Standby Current
ISTD
VIN=5.2V
VCE in OFF mode
Power Supply
Rejection Ratio
PSRR
Ripple 0.5Vp-p
VIN=5.2V
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT)/∆T
mV
f=100Hz
65
dB
f=1KHz
65
dB
±100
ppm/oC
IOUT=30mA
Short Current Limit
ISHORT
VOUT=0V
50
mA
RMS Output Noise
VNOISE
10Hz ≤f≤100kHz
50
µVrms
CE "High" Voltage
CE input voltage "High"
CE "Low" Voltage
CE input voltage "Low"
1.5
V
0.4
Thermal Shutdown
160
Thermal Shutdown Hysteresis
25
May. 2010 Rev. 1. 4
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o
C
oC
BCD Semiconductor Manufacturing Limited
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Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics
3.50
1.90
AP2125-1.8
VIN=2.8V
1.88
3.46
o
TC=25 C
1.84
Output Voltage (V)
Output Voltage (V)
1.86
1.82
1.80
1.78
1.76
3.42
3.40
3.38
3.36
3.34
1.72
3.32
3.30
0
50
100
150
200
250
o
TC=25 C
3.44
1.74
1.70
AP2125-3.3
VIN=4.3V
3.48
300
0
50
100
250
300
Figure 5. Output Voltage vs. Output Current
Figure 4. Output Voltage vs. Output Current
400
400
360
360
AP2125-1.8
VIN=2.8V
280
o
240
TC=-40 C
o
200
TC=25 C
160
TC=85 C
o
120
280
240
40
0
90
120
150
180
210
240
270
300
TC=25 C
TC=85oC
120
80
60
o
160
40
30
o
TC=-40 C
200
80
0
AP2125-3.3
VIN=4.3V
320
Dropout Voltage (mV)
320
Dropout Voltage (mV)
200
Output Current (mA)
Output Current (mA)
0
150
0
30
60
90
120
150
180
210
240
270
300
Output Current (mA)
Output Current (mA)
Figure 6. Dropout Voltage vs. Output Current
Figure 7. Dropout Voltage vs. Output Current
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
13
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
400
360
IOUT=10mA
320
IOUT=100mA
AP2125-1.8
VIN=2.8V
IOUT=200mA
280
Dropout Voltage (mV)
Dropout Voltage (mV)
400
IOUT=300mA
240
200
160
120
360
IOUT=10mA
320
IOUT=100mA
IOUT=200mA
280
IOUT=300mA
240
200
160
120
80
80
40
40
0
0
-25
0
25
50
-25
75
0
25
50
75
o
o
Case Temperature ( C)
Case Temperature ( C)
Figure 8. Dropout Voltage vs. Case Temperature
Figure 9. Dropout Voltage vs. Case Temperature
2.0
3.6
1.8
3.2
1.6
2.8
1.4
Output Voltage (V)
Output Voltage (V)
AP2125-3.3
VIN=4.3V
1.2
1.0
0.8
AP2125-1.8
o
TC=25 C
0.6
0.4
0.0
50
100
150
200
250
300
350
400
450
1.6
1.2
AP2125-3.3
o
TC=25 C
VIN=4.3V
VIN=6V
0.4
VIN=6V
0
2.0
0.8
VIN=2.8V
0.2
2.4
0.0
500
0
50
100
150
200
250
300
350
400
450
500
Output Current (mA)
Output Current (mA)
Figure 11. Current Limit
Figure 10. Current Limit
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
14
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
2.0
3.6
1.8
3.2
1.4
o
TC=-40 C
1.2
o
TC=25 C
1.0
o
TC=85 C
0.8
AP2125-3.3
VIN=4.3V
2.8
AP2125-1.8
VIN=2.8V
Output Voltage (V)
Output Voltage (V)
1.6
2.4
TC=-40 C
2.0
TC=25 C
1.6
TC=85 C
o
o
o
1.2
0.6
0.8
0.4
0.4
0.2
0.0
0.0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
Output Current (mA)
2.0
3.6
1.8
3.2
Output Voltage (V)
Output Voltage (V)
1.2
1.0
0.8
0.6
0.4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
350
400
450
500
4.0
4.5
5.0
5.5
1mA
100mA
300mA
2.4
2.0
1.6
1.2
0.8
AP2125-1.8
o
TC=25 C
0.2
0.0
0.0
300
2.8
1mA
100mA
300mA
1.4
250
Figure 13. Current Limit
Figure 12. Current Limit
1.6
200
Output Current (mA)
AP2125-3.3
o
TC=25 C
0.4
0.0
0.0
6.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Input Voltage (V)
Figure 14. Output Voltage vs. Input Voltage
Figure 15. Output Voltage vs. Input Voltage
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
15
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
2.0
3.6
1.8
3.2
2.8
o
1.4
TC=-40 C
1.2
TC=25 C
1.0
TC=85 C
Output Voltage (V)
Output Voltage (V)
1.6
o
o
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
o
TC=-40 C
o
2.4
TC=25 C
2.0
TC=85 C
o
1.6
1.2
AP2125-1.8
o
TC=25 C
0.8
AP2125-3.3
o
TC=25 C
No Load
0.4
No Load
4.5
5.0
5.5
0.0
0.0
6.0
0.5
1.0
1.5
2.0
Input Voltage (V)
4.0
4.5
5.0
5.5
6.0
IOUT=10mA
1.82
IOUT=30mA
1.80
IOUT=100mA
IOUT=300mA
1.78
3.34
3.32
1.74
3.24
1.72
3.22
3.20
25
50
75
IOUT=30mA
3.28
3.26
0
IOUT=10mA
3.30
1.76
-25
AP2125-3.3
VIN=4.3V
3.36
Output Voltage (V)
Output Voltage (V)
3.38
AP2125-1.8
VIN=2.8V
1.84
1.70
3.5
3.40
1.90
1.86
3.0
Figure 17. Output Voltage vs. Input Voltage
Figure 16. Output Voltage vs. Input Voltage
1.88
2.5
Input Voltage (V)
IOUT=100mA
IOUT=300mA
-25
0
25
50
75
o
o
Case Temperature ( C)
Case Temperature ( C)
Figure 19. Output Voltage vs. Case Temperature
Figure 18. Output Voltage vs. Case Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
16
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
100
100
90
80
70
60
50
40
TC=-40oC
30
TC=25 C
o
o
TC=85 C
20
70
60
50
o
TC=-40 C
40
o
TC=25 C
30
TC=85oC
20
10
10
0
AP2125-3.3
No Load
80
Supply Current (µA)
Supply Current (µA)
90
AP2125-1.8
No Load
0
0
1
2
3
4
5
6
0
1
2
Input Voltage (V)
Figure 20. Supply Current vs. Input Voltage
5
6
80
76
76
AP2125-1.8
VIN=2.8V
72
No Load
68
64
60
56
52
64
60
56
52
48
44
44
0
20
40
60
No Load
68
48
-20
AP2125-3.3
VIN=4.3V
72
Supply Current (µA)
Supply Current (µA)
4
Figure 21. Supply Current vs. Input Voltage
80
40
-40
3
Input Voltage (V)
40
-40
80
-20
0
20
40
60
80
o
o
Case Temperature ( C)
Case Temperature ( C)
Figure 22. Supply Current vs. Case Temperature
Figure 23. Supply Current vs. Case Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
17
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
130
150
120
140
130
110
120
110
90
Supply Current (µA)
Supply Current (µA)
100
80
70
o
60
TC=-40 C
50
TC=25 C
40
TC=85 C
o
o
30
AP2125-1.8
VIN=2.8V
20
90
80
70
o
60
TC=-40 C
50
TC=25 C
40
TC=85 C
o
o
30
AP2125-3.3
VIN=4.3V
20
10
0
100
10
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
Output Current (mA)
Output Current (mA)
Figure 24. Supply Current vs. Output Current
Figure 25. Supply Current vs. Output Current
120
150
110
135
100
120
Supply Current (µA)
Supply Current (µA)
90
80
70
VIN=2.8V
60
VIN=6V
50
40
105
90
75
VIN=4.3V
60
VIN=6V
45
30
10
0
30
AP2125-1.8
o
TC=25 C
20
0
40
80
120
160
200
240
280
320
360
400
440
AP2125-3.3
o
TC=25 C
15
0
480
0
40
80
120
160
200
240
280
320
360
Output Current (mA)
Output Current (mA)
Figure 26. Supply Current vs. Output Current
Figure 27. Supply Current vs. Output Current
May. 2010 Rev. 1. 4
400
BCD Semiconductor Manufacturing Limited
18
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
VIN (1V/Div)
VIN (0.5V/Div)
AP2125-1.8
4.8
3.8
2.8
AP2125-3.3
5
4.5
4
∆VOUT (0.05V/Div)
∆VOUT (0.02V/Div)
0.02
0
-0.02
0.05
0
-0.05
Time (100µs/Div)
Time (40µs/Div)
Figure 29. Line Transient
(Conditions: IOUT=30mA, COUT=1µF, VIN=4 to 5V)
Figure 28. Line Transient
(Conditions: IOUT=30mA, COUT=1µF, VIN=2.8 to 3.8V)
VOUT (0.02V/Div)
VOUT (0.02V/Div)
AP2125-1.8
1.84
1.82
IOUT (50mA/Div)
IOUT (50mA/Div)
1.8
100
50
0
AP2125-3.3
3.34
3.32
3.3
100
50
0
Time (40µs/Div)
Time (40µs/Div)
Figure 31. Load Transient
(Conditions: IOUT=10 to 100mA, CIN=1µF,
COUT=1µF, VIN=4.3 V)
Figure 30. Load Transient
(Conditions: IOUT=10 to 100mA, CIN=1µF,
COUT=1µF, VIN=2.8 V)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
19
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
1000
AP2125-1.8
CIN = 1µF
AP2125-2.8
VCE (1V/Div)
3
COUT = 1µF
100
2
ESR (Ω)
1
0
10
Stable Area
vOUT (1V/Div)
3
1
2
1
0.1
0
0
50
100
Time (200µs/Div)
250
300
100
100
AP2125-1.8
VIN=2.8V
90
80
IOUT=30mA
90
AP2125-3.3
VIN=4.3V
80
IOUT=30mA
70
PSRR (dB)
70
PSRR (dB)
200
Figure 33. ESR vs. Output Current
Figure 32. Enable Input Response and Auto-discharge
(Conditions: VCE=0 to 3V, CIN=1µF,
COUT=1µF, VIN=3V, no load)
60
50
40
60
50
40
30
30
20
20
10
10
0
10
150
Output Current (mA)
100
1k
10k
0
10
100k
100
1k
10k
100k
Frequency (Hz)
Frequency (Hz)
Figure 34. PSRR
Figure 35. PSRR
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
20
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Performance Characteristics (Continued)
800
600
550
AP2125-1.8
Package: SC-70-5
No Heatsink
450
AP2125-3.3
Package: SC-70-5
No Heatsink
700
Power Dissipation (mW)
Power Dissipation (mW)
500
400
350
300
250
200
600
500
400
300
200
150
100
100
50
0
0
30
40
50
60
70
80
90
100
110
120
30
40
50
60
70
80
90
100
110
120
o
o
Ambient Temperature ( C)
Ambient Temperature ( C)
Figure 37. Power Dissipation vs. Ambient Temperature
Figure 36. Power Dissipation vs. Ambient Temperature
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
21
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Typical Application
AP2125-1.8
VIN=2.8V
VIN
VIN
VOUT=1.8V
VOUT
GND
VOUT
COUT
1µF
CIN
1µF
VIN
AP2125-3.0
VIN=4V
VIN
VOUT=3V
VOUT
VOUT
GND
COUT
NC
CE
1µF
CIN
1µF
Figure 38. Typical Application of AP2125
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
22
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions
SOT-23-3
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
1.800(0.071)
2.000(0.079)
0.200(0.008)
0
8
0.300(0.012)
0.500(0.020)
1.450(0.057)
MAX.
0.950(0.037)
TYP
0.300(0.012)
0.600(0.024)
2.650(0.104)
2.950(0.116)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
°
°
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
23
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
24
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SC-70-5
Unit: mm(inch)
0°
2.000(0.079)
8°
2.200(0.087)
0.150(0.006)
0.350(0.014)
0.200(0.008)
1.150(0.045)
1.350(0.053)
2.150(0.085)
2.450(0.096)
0.260(0.010)
0.460(0.018)
0.525(0.021)REF
0.650(0.026)TYP
0.000(0.000)
0.100(0.004)
1.200(0.047)
1.400(0.055)
0.080(0.003)
0.150(0.006)
0.900(0.035) 0.900(0.035)
1.000(0.039) 1.100(0.043)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
25
Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Mechanical Dimensions (Continued)
SC-82
Unit: mm(inch)
0.250(0.010)
0.400(0.016)
4°
12°
0.150(0.006)
Typ
1.150(0.045)
1.350(0.053)
4°
12 °
0.100(0.004)
0.260(0.010)
1.800(0.071)
2.400(0.094)
0°
8°
0.260(0.010)
0.460(0.018)
0.350(0.014)
0.500(0.020)
1.800(0.071)
2.200(0.087)
1.300(0.051)
Typ
0.700(0.027)
1.000(0.039)
0.800(0.031)
1.100(0.043)
4°
12°
0.000(0.000)
0.100(0.004)
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
26
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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