DATA SHEET BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Collector Current (Peak) ICM Base Current (Peak) IBM Power Dissipation PD Power Dissipation(TC=25°C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Thermal Resistance BCY78 32 32 -65 to +200 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB= Rated VCBO ICBO VCB= Rated VCBO, TA=150°C IEBO VEB=5.0V BVCBO IC=10µA (BCY78) BVCBO IC=10µA (BCY79) BVCEO IC=2.0mA (BCY78) BVCEO IC=2.0mA (BCY79) BVEBO IE=1.0µA VCE(SAT) IC=10mA, IB=250µA VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250µA VBE(SAT) IC=100mA, IB=2.5mA VBE(ON) VCE=5.0V, IC=2.0mA SYMBOL hFE hFE hFE hFE TEST CONDITIONS VCE=5.0V, IC=10µA VCE=5.0V, IC=2.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA UNITS V V V mA mA mA mW W 5.0 100 200 200 340 1.0 ΘJC BCY78-VII BCY79-VII MIN MAX 140 TYP 120 220 80 40 BCY79 45 45 BCY78-VIII BCY79-VIII MIN MAX 30 180 310 120 400 45 °C 450 °C/W 150 °C/W MIN MAX 15 10 20 32 45 32 45 5.0 0.60 0.70 0.60 BCY78-IX BCY79-IX MIN MAX 40 250 460 160 630 60 0.25 0.80 0.85 1.20 0.75 UNITS nA µA nA V V V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 240 1000 60 (SEE REVERSE SIDE) R3 BCY78/BCY79 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS Continued SYMBOL fT Cob Cib NF ton td tr toff ts tf ton td tr toff ts tf TEST CONDITIONS VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=200µA, RS=2kΩ, f=1.0kHz, B=200Hz VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA MIN 100 TYP MAX 7.0 15 10 100 50 50 700 600 100 100 35 65 400 300 100 TO-18 PACKAGE - MECHANICAL OUTLINE A B D SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J C E F LEAD #2 LEAD #1 I 45° G H DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1) LEAD #3 J R1 Lead Code 1. Emitter 2. Base 3. Collector UNITS MHz pF pF dB ns ns ns ns ns ns ns ns ns ns ns ns