Jiangsu BAS70WS Schottky diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
SCHOTTKY DIODE
BAS70WS
SOD-323
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
1.70
1.30
Marking:
BAS70WS:K73
0.30
·
·
·
1.00
Features
2.65
Unit:mm
Maximum Ratings and Electrical Characteristics, Single Diode @ TA = 25°C unless otherwise specified
Characteristic
Symbol
BAS70
Unit
VRRM
VRWM
VR
70
V
VR(RMS)
49
V
IF
70
mA
IFSM
100
mA
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ tp < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Ratings
Pd
200
mW
RqJA
625
K/W
Tj
-55 to +125
°C
TSTG
-65 to +150
°C
@ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Symbol
V(BR)R
Min
Max
Unit
70
V
Test Condition
IR=10uA
tp <300µs, IF = 1.0mA
tp <300µs, IF = 15mA
Forward Voltage
VF
—
410
1000
mV
Peak Reverse Current
IRM
¾
100
nA
tp < 300µs, VR = 50V
Junction Capacitance
Cj
¾
2.0
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
—
5.0
ns
IF = IR = 10mA to IR = 1.0mA,
RL =100W
Notes:
1. Valid Provided that terminals are kept at ambient temperature.
2. Test period <3000ms.
1 /1
SOD-323 PACKAGE OUTLINE DIMENSIONS
E
A2
b
D
A1
A
E1
L1
c
θ
0.20
L
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
1.050
1.250
0.041
0.049
A1
0.000
0.100
0.000
0.004
A2
1.050
1.150
0.041
0.045
b
0.200
0.400
0.008
0.016
c
0.080
0.150
0.003
0.006
D
1.200
1.400
0.047
0.055
E
1.600
1.800
0.063
0.071
E1
2.500
2.800
0.098
L
0.110
0.019REF
0.475REF
L1
0.250
0.450
0.010
0.018
θ
0°
8°
0°
8°
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