SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD433 VCBO VCEO Collector-base voltage Collector-emitter voltage BD435 Open emitter Emitter -base voltage IC 32 BD437 45 BD433 22 BD435 UNIT 22 Open base BD437 VEBO VALUE 32 V V 45 Open collector 5 V Collector current (DC) 4 A ICM Collector current-Peak 7 A IB Base current 1 A PC Collector power dissipation 36 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat PARAMETER Collector-emitter saturation voltage CONDITIONS MIN BD433/435 0.2 1.1 V 1.2 BD433 Collector-emitter sustaining voltage BD435 22 IC=0.1A; IB=0 BD437 ICES ICES Collector cut-off current Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain BD433 VCB=22V; IE=0 BD435 VCB=32V; IE=0 BD437 VCB=45V; IE=0 BD433 VCE=22V; VBE=0 BD435 VCE=32V; VBE=0 BD437 VCE=45V; VBE=0 VEB=5V; IC=0 hFE-3 DC current gain IC=0.5A ; VCE=1V 100 µA 1 mA 130 85 140 50 IC=2A ; VCE=1V BD437 Transition frequency µA 30 BD433/435 fT 100 40 IC=10mA ; VCE=5V BD437 DC current gain V 32 45 BD433/435 hFE-2 V IC=2A ; VCE=1V BD437 VCEO(SUS) UNIT 0.6 BD437 Base-emitter on voltage MAX 0.5 IC=2A; IB=0.2A BD433/435 VBE TYP. 40 IC=250mA; VCE=1V 2 3 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD433/435/437