ON ESD1014 Low capacitance esd protection array Datasheet

ESD1014, SZESD1014
Low Capacitance ESD
Protection Array for High
Speed Data Lines
Protection
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The ESD1014 transient voltage suppressor is designed to protect
high speed data lines from ESD, EFT, and lightning.
Features
• Low Capacitance (6 pF Maximum Between I/O Lines and GND)
• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model
•
•
•
and Class C (Exceeding 400 V) per Machine Model
Protection for the Following IEC Standards:
IEC 61000−4−2 (ESD) Level 4 − 30 kV (Contact)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
LOW CAPACITANCE
DIODE TVS ARRAY
PIN CONFIGURATION
AND SCHEMATIC
Typical Applications
•
•
•
•
•
•
•
High Speed Communication Line Protection
USB 1.1 and 2.0 Power and Data Line Protection
Digital Video Interface (DVI)
Monitors and Flat Panel Displays
T1/E1 and T3/E3
10/100/1000 Ethernet Protection
Gigabit Ethernet Protection
Value
Unit
Peak Power Dissipation
Ppk
450
W
Maximum Peak Pulse Current
8 x 20 mS @ TA = 25°C
IPP
30
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Lead Solder Temperature −
Maximum (10 Seconds)
TL
260
°C
ESD
16000
400
30000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 6
8
7
6
1014
AYW
G
UDFN10
CASE 517AN
Symbol
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact (ESD)
9
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
10
1
2
3
4
5
1
1014
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
ESD1014MUTAG
UDFN10
(Pb−Free)
3000 / Tape &
Reel
SZESD1014MUTAG
UDFN10
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
ESD1014/D
ESD1014, SZESD1014
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Reverse Working Voltage
Conditions
VRWM
Breakdown Voltage
Min
Typ
(Note 1)
VBR
IT=1 mA, (Note 2)
5.0
Max
Unit
3.3
V
5.3
V
Reverse Leakage Current
IR
VRWM = 3.3 V
5.0
mA
Clamping Voltage
VC
IPP = 1 A, pin 5 to GND
6.2
V
Clamping Voltage
VC
IPP = 1 A
7.5
V
Clamping Voltage
VC
IPP = 10 A
9.0
V
Clamping Voltage
VC
IPP = 25 A
11
V
Maximum Peak Pulse Current
IPP
8x20 ms Waveform
30
A
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins and GND
3.8
5.0
pF
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. VBR is measured at pulse test current IT.
TYPICAL PERFORMANCE CURVES
100
100
90
90
% OF PEAK PULSE CURRENT
PEAK POWER DISSIPATION (%)
(TJ = 25°C unless otherwise noted)
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
200
PEAK VALUE IRSM @ 8 ms
tr
0
TA, AMBIENT TEMPERATURE (°C)
20
40
60
t, TIME (ms)
Figure 2. 8 × 20 ms Pulse Waveform
Figure 1. Pulse Derating Curve
www.onsemi.com
2
80
ESD1014, SZESD1014
PACKAGE DIMENSIONS
UDFN10 2.6x2.6, 0.5P
CASE 517AN
ISSUE B
D
A
ÍÍÍ
ÍÍÍ
ÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
B
E
PIN ONE
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
0.10 C
2X
0.10 C
2X
TOP VIEW
A3
0.10 C
A
10X
0.08 C
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.20
0.30
2.60 BSC
2.00
2.25
2.60 BSC
1.11
1.36
0.50 BSC
0.20
--0.30
0.40
A1
SIDE VIEW
NOTE 4
C
SOLDERING FOOTPRINT*
SEATING
PLANE
2.25
10X
D2
L
1
5
10X
0.58
E2
10X
K
10
6
10X
e
BOTTOM VIEW
1.42 2.90
b
0.10 C A
0.05 C
B
10X
0.30
NOTE 3
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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ESD1014/D
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