Chenmko CH847UPNPT Pnp&npn muti-chip general purpose transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CH847UPNPT
SURFACE MOUNT
PNP&NPN Muti-Chip General Purpose Transistor
VOLTAGE 45 Volts
CURRENT 100 mAmperes
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SC-88/SOT-363
* Small surface mounting type. (SC-88/SOT-363)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Two internal isolated PNP and NPN transistors in
one package.
(1)
(6)
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
CONSTRUCTION
* PNP and NPN transistors in one package.
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
C1
B2
E2
6
5
4
2.15~2.45
TR2
TR1
1
2
3
E1
B1
C2
SC-88/SOT-363
Dimensions in millimeters
LIMITING VALUES of TR1( NPN Transistor )
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
−
VCEO
collector-emitter voltage
open base
VCES
collector-base voltage
open emitter
VEBO
emitter-base voltage
open collector
IC
MAX.
UNIT
50
V
−
45
V
−
50
V
−
6.0
V
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
Tstg
storage temperature
−55
Tj
junction temperature
−
Tamb
operating ambient temperature
−55
Tamb ≤ 25 °C; note 1
−
200
mW
+150
°C
150
°C
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-01
RATING CHARACTERISTIC ( CH847UPNPT )
LIMITING VALUES of TR2(PNP Transistor )
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-50
V
VCEO
collector-emitter voltage
open base
−
-45
V
VCES
collector-base voltage
open emitter
−
-50
V
VEBO
emitter-base voltage
open collector
−
-5.0
V
IC
collector current (DC)
−
-100
mA
ICM
peak collector current
−
-200
mA
IBM
peak base current
−
-200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−55
+150
°C
T amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
note 1
625
UNIT
W/ °C
RATING CHARACTERISTIC ( CH847UPNPT )
CHARACTERISTICS of TR1 ( NPN Transistor )
Tamb = 25 °C unless otherwise specilped.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 30 V
−
−
VCB = 30 V; TA = 125 OC
−
−
5.0
uA
−
−
0.1
uA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
15
nA
hFE
DC current gain
IC = 2.0 mA; VCE = 5.0V; note 1
200
−
450
VCEsat
collector-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
−
−
90
200
250
600
mV
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
−
−
700
900
−
−
mV
mV
VBEon
base-emitter voltage
IC = 2.0 mA ; V cE = 5 V
IC = 10.0 mA ; V CE = 5 V
580
−
660
−
700
720
mV
mV
CCBO
collector-base capacitance
I E = ie = 0; VCB = 10V ; f = 1 MHz
−
3.5
6.0
pF
fT
transition frequency
IC = 10 mA; VCE = 5V ;
f = 100 MHz
100
300
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CHARACTERISTICS of TR2( PNP Transistor )
Tamb = 25 °C unless otherwise specilped.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 30 V
−
−
-15
nA
VCB = 30 V; TA = 125 OC
−
−
-4.0
uA
uA
IEBO
emitter cut-off current
IC = 0; VEB = - 5 V
−
−
-0.1
hFE
DC current gain
IC = -2.0 mA; VCEI = -5.0V
200
290
450
VCEsat
collector-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
−
−
-75
-250
-300
-650
mV
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA ; I B = 0.5 mA
IC = 100 mA ; I B = 5.0 mA
−
−
-700
-850
−
-950
mV
mV
VBEon
base-emitter voltage
IC = 2.0 mA ; V cE = 5 V
IC = 10.0 mA ; V CE = 5 V
-600
−
-650
−
-750
-820
mV
mV
CCBO
collector-base capacitance
IE = ie = 0; VCB = -10V; f = 1 MHz
−
3.0
4.5
pF
fT
transition frequency
IC = -10mA; VCE = -5V ;
f = 100 MHz
100
200
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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