FDS9400A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –3.4 A, –30 V Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) RDS(ON) = 130 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V • Low gate charge (2.4nC typical) • Load switch • Battery protection • High power and current handling capability DD DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current –3.4 A – Continuous (Note 1a) – Pulsed –10 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W –55 to +175 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9400A FDS9400A 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS9400A Rev B1(W) FDS9400A December 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –30 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = 25 V, VGS = –25 V, VDS = 0 V VDS = 0 V 100 –100 NA NA –3 V On Characteristics ID = –250 µA, Referenced to 25°C –23 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 4 VGS = –10 V, ID = –1.0 A VGS = –4.5 V, ID = –0.5 A VGS= –10 V, ID = –1.0 A, TJ=125°C 105 157 147 –1 –1.8 mV/°C 130 200 210 –5 mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –3.4 A 4.5 A VDS = –15 V, f = 1.0 MHz V GS = 0 V, 205 pF 55 pF 26 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 4.5 9 ns 12.5 23 ns ns td(off) Turn–Off Delay Time 11 20 tf Turn–Off Fall Time 2 4 ns Qg Total Gate Charge 2.4 3.5 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –15 V, VGS = –5 V ID = –1 A, 1.0 nC 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) –0.8 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9400A Rev B1(W) FDS9400A Electrical Characteristics FDS9400A Typical Characteristics 2 VGS = -10V -6.0V -5.0V -4.5V 8 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 -4.0V 6 4 -3.5V 2 -3.0V 0 1.8 VGS=-4.5V 1.6 -5.0V 1.4 -6.0V -7.0V 1.2 -8.0V 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.55 ID = -1A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.7 6 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.5 1.3 1.1 0.9 0.7 ID = -0.5A 0.45 0.35 TA = 125oC 0.25 TA = 25oC 0.15 0.05 -50 -25 0 25 50 75 100 125 150 175 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 5 10 4 VGS =0V 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -10V 1 125oC 3 2 1 0 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9400A Rev B1(W) FDS9400A Typical Characteristics 10 300 -VGS, GATE-SOURCE VOLTAGE (V) ID = -1A VDS = -5V -10V CAPACITANCE (pF) -15V 6 4 CISS 200 150 COSS 100 2 50 CRSS 0 0 1 2 3 4 0 5 0 5 Qg, GATE CHARGE (nC) 20 25 30 50 P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 10 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100µs RDS(ON) LIMIT 1ms 10ms 100ms 1 DC VGS = -10V SINGLE PULSE RθJA = 125oC/W 0.1 1s 10s TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE f = 1 MHz VGS = 0 V 250 8 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9400A Rev B1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4