SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO -50 V V CEO -45 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -1 A Continuous Collector Current IC -500 mA Base Current IB -100 mA Peak Base Current I BM -200 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector Cut-Off Current I CBO MIN. TYP. MAX. UNIT CONDITIONS. -0.1 -0.5 µA V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150°C Emitter Cut-Off Current I EBO -10 µA V EB=-5V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) -700 mV I C=-500mA, I B=-50mA* Base-Emitter Saturation Voltage V BE(on) -1.2 V I C=-500mA, V CE=-1V* Static Forward Current Transfer Ratio h FE BC80716 100 250 I C=-100mA, V CE=-1V* BC80725 160 400 I C=-100mA, V CE=-1V* 250 600 BC80740 All bands I C=-100mA, V CE=-1V* I C=-500mA, V CE=-1V* 40 Transition Frequency fT 100 MHz I C=-10mA, V CE=-5V f=35MHz Output Capacitance C obo 8.0 pF V CB=-10V f=1MHz *Measured under pulsed conditions. Spice parameter data is available upon request for these devices tba