UniFETTM FDP19N40 tm N-Channel MOSFET 400V, 19A, 0.24Ω Features Description • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 32nC) • Low Crss ( Typ. 20pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant D G G DS TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP19N40 400 Units V ±30 V -Continuous (TC = 25oC) 19 -Continuous (TC = 100oC) 11.4 - Pulsed A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 19 A EAR Repetitive Avalanche Energy (Note 1) 21.5 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns 76 A (Note 2) 542 mJ (Note 3) (TC = 25oC) 215 W - Derate above 25oC 1.65 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP19N40 RθJC Thermal Resistance, Junction to Case 0.6 RθCS Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2012 Fairchild Semiconductor Corporation FDP19N40 Rev.C0 1 Units o C/W www.fairchildsemi.com FDP19N40 N-Channel MOSFET February 2012 Device Marking FDP19N40 Device FDP19N40 Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 400 - - V ID = 250μA, Referenced to 25oC - 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V - - 1 VDS = 320V, TC = 125oC - - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.2 0.24 Ω - 18.3 - S nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 9.5A gFS Forward Transconductance VDS = 20V, ID = 9.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V, ID = 19A VGS = 10V (Note 4, 5) - 1590 2115 pF - 255 340 pF - 20 29 pF - 32 40 nC - 10 - nC - 13 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200V, ID = 19A RG = 25Ω (Note 4, 5) - 31 72 ns - 70 150 ns - 82 174 ns - 49 108 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 19 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 76 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 19A - - 1.4 V trr Reverse Recovery Time - 349 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 19A dIF/dt = 100A/μs - 3.56 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 3mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 19A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP19N40 Rev.C0 2 www.fairchildsemi.com FDP19N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FDP19N40 N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 40 ID,Drain Current[A] ID,Drain Current[A] VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 Figure 2. Transfer Characteristics 50 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.03 1 0.1 1 VDS,Drain-Source Voltage[V] 4 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 80 IS, Reverse Drain Current [A] 0.35 0.30 VGS = 10V 0.25 VGS = 20V 0.20 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TJ = 25 C 0.15 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz 2500 2000 Ciss 1500 Coss 1000 500 0 0.1 FDP19N40 Rev.C0 0.6 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 3500 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.40 RDS(ON) [Ω], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 Crss *Note: ID = 19A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 35 www.fairchildsemi.com FDP19N40 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 9.5A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area - FDP19N40 200 100 2.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Safe Operating Area 20 10μs 10 16 ID, Drain Current [A] ID, Drain Current [A] 100μs 1ms 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 1. TC = 25 C 12 8 4 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve - FDP19N40 Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 0.05 t2 0.02 *Notes: 0.01 0.01 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP19N40 Rev.C0 PDM 0.1 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 0 10 1 10 www.fairchildsemi.com FDP19N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP19N40 Rev.C0 5 www.fairchildsemi.com FDP19N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP19N40 Rev.C0 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP19N40 Rev.C0 7 www.fairchildsemi.com FDP19N40 N-Channel MOSFET Mechanical Dimensions tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP19N40 Rev.C0 8 www.fairchildsemi.com FDP19N40 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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