Fairchild FDP19N40 N-channel mosfet 400v, 19a, 0.24î© Datasheet

UniFETTM
FDP19N40
tm
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
Description
• RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low Gate Charge ( Typ. 32nC)
• Low Crss ( Typ. 20pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
D
G
G DS
TO-220
FDP Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FDP19N40
400
Units
V
±30
V
-Continuous (TC = 25oC)
19
-Continuous (TC = 100oC)
11.4
- Pulsed
A
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
19
A
EAR
Repetitive Avalanche Energy
(Note 1)
21.5
mJ
dv/dt
Peak Diode Recovery dv/dt
15
V/ns
76
A
(Note 2)
542
mJ
(Note 3)
(TC = 25oC)
215
W
- Derate above 25oC
1.65
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP19N40
RθJC
Thermal Resistance, Junction to Case
0.6
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
©2012 Fairchild Semiconductor Corporation
FDP19N40 Rev.C0
1
Units
o
C/W
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
February 2012
Device Marking
FDP19N40
Device
FDP19N40
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TJ = 25oC
400
-
-
V
ID = 250μA, Referenced to 25oC
-
0.5
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 400V, VGS = 0V
-
-
1
VDS = 320V, TC = 125oC
-
-
10
μA
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.2
0.24
Ω
-
18.3
-
S
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 9.5A
gFS
Forward Transconductance
VDS = 20V, ID = 9.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 320V, ID = 19A
VGS = 10V
(Note 4, 5)
-
1590
2115
pF
-
255
340
pF
-
20
29
pF
-
32
40
nC
-
10
-
nC
-
13
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 200V, ID = 19A
RG = 25Ω
(Note 4, 5)
-
31
72
ns
-
70
150
ns
-
82
174
ns
-
49
108
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
19
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
76
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 19A
-
-
1.4
V
trr
Reverse Recovery Time
-
349
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 19A
dIF/dt = 100A/μs
-
3.56
-
μC
(Note 4)
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 3mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 19A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP19N40 Rev.C0
2
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
FDP19N40 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
40
ID,Drain Current[A]
ID,Drain Current[A]
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
Figure 2. Transfer Characteristics
50
1
o
150 C
10
o
-55 C
o
25 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.1
0.03
1
0.1
1
VDS,Drain-Source Voltage[V]
4
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
80
IS, Reverse Drain Current [A]
0.35
0.30
VGS = 10V
0.25
VGS = 20V
0.20
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
2. 250μs Pulse Test
*Note: TJ = 25 C
0.15
0
10
20
30
ID, Drain Current [A]
40
1
0.2
50
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
2500
2000
Ciss
1500
Coss
1000
500
0
0.1
FDP19N40 Rev.C0
0.6
1.0
VSD, Body Diode Forward Voltage [V]
1.2
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
3500
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.40
RDS(ON) [Ω],
Drain-Source On-Resistance
5
6
7
VGS,Gate-Source Voltage[V]
VDS = 100V
VDS = 200V
VDS = 320V
8
6
4
2
Crss
*Note: ID = 19A
0
1
10
VDS, Drain-Source Voltage [V]
0
30
3
5
10
15
20
25
Qg, Total Gate Charge [nC]
30
35
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-75
-25
25
75
125
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 9.5A
0.5
0.0
-75
175
Figure 9. Maximum Safe Operating Area
- FDP19N40
200
100
2.5
-25
25
75
125
o
TJ, Junction Temperature [ C]
175
Figure 10. Maximum Safe Operating Area
20
10μs
10
16
ID, Drain Current [A]
ID, Drain Current [A]
100μs
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
0.1
o
1. TC = 25 C
12
8
4
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve - FDP19N40
Thermal Response [ZθJC]
1
0.5
0.1
0.2
t1
0.05
t2
0.02
*Notes:
0.01
0.01
o
1. ZθJC(t) = 0.6 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.003
-5
10
FDP19N40 Rev.C0
PDM
0.1
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP19N40 Rev.C0
5
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP19N40 Rev.C0
6
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
FDP19N40 Rev.C0
7
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
Mechanical Dimensions
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDP19N40 Rev.C0
8
www.fairchildsemi.com
FDP19N40 N-Channel MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
The Power Franchise®
F-PFS™
2Cool™
PowerTrench®
®
FRFET®
AccuPower™
PowerXS™
Global Power ResourceSM
AX-CAP™*
Programmable Active Droop™
®
®
Green Bridge™
BitSiC
QFET
TinyBoost™
Green FPS™
Build it Now™
QS™
TinyBuck™
Green FPS™ e-Series™
CorePLUS™
Quiet Series™
TinyCalc™
Gmax™
CorePOWER™
RapidConfigure™
TinyLogic®
GTO™
CROSSVOLT™
™
TINYOPTO™
IntelliMAX™
CTL™
TinyPower™
ISOPLANAR™
Current Transfer Logic™
Saving our world, 1mW/W/kW at a time™
TinyPWM™
Marking Small Speakers Sound Louder SignalWise™
DEUXPEED®
TinyWire™
Dual Cool™
and Better™
SmartMax™
TranSiC®
EcoSPARK®
MegaBuck™
SMART START™
TriFault Detect™
EfficentMax™
MICROCOUPLER™
Solutions for Your Success™
TRUECURRENT®*
ESBC™
MicroFET™
SPM®
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
SuperSOT™-3
MillerDrive™
Fairchild®
UHC®
SuperSOT™-6
MotionMax™
Fairchild Semiconductor®
Ultra FRFET™
SuperSOT™-8
Motion-SPM™
FACT Quiet Series™
UniFET™
SupreMOS®
mWSaver™
FACT®
VCX™
®
SyncFET™
OptoHiT™
FAST
®
VisualMax™
Sync-Lock™
OPTOLOGIC
FastvCore™
®
VoltagePlus™
OPTOPLANAR
®*
FETBench™
XS™
FlashWriter® *
®
FPS™
Similar pages