isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD500/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) -80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD500 -55 BD500B -85 BD500 -50 BD500B -80 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A PC Collector Power Dissipation @ TC=25℃ 75 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.39 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD500/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD500 VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= -30mA ;IB= 0 -80 IC= -5A; IB= -0.5A B Collector-Emitter Saturation Voltage BD500B IC= -3.5A; IB= -0.35A BD500 IC= -5A; VCE= -4V -1.0 V -1.6 V -1.0 mA -1.0 mA B Base-Emitter On Voltage BD500B UNIT V B BD500 VBE(on) TYP. -50 BD500B VCE(sat) MIN IC= -3.5A; VCE= -4V VCB= -55V;IE= 0 ICBO Collector Cutoff Current VCB= -85V;IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 BD500 hFE 15 DC Current Gain BD500B fT IC= -5A; VCE= -4V Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn 90 IC= -3.5A; VCE= -4V IC= -1.0A ; VCE= -10V 2 8 MHz