Intersil EL5177IYZ-T13 550mhz differential twisted-pair driver Datasheet

EL5177
®
Data Sheet
May 10, 2007
FN7344.4
550MHz Differential Twisted-Pair Driver
Features
The EL5177 is a high bandwidth amplifier with an output in
differential form. It is primarily targeted for applications such
as driving twisted-pair lines or any application where
common mode injection is likely to occur. The input signal
can be in either single-ended or differential form but the
output is always in differential form.
• Fully differential inputs, outputs, and feedback
• Differential input range ±2.3V
• 550MHz 3dB bandwidth
• 1100V/µs slew rate
• Low distortion at 20MHz
On the EL5177, two feedback inputs provide the user with
the ability to set the device gain (stable at minimum gain of
one.)
• Single 5V or dual ±5V supplies
• 40mA maximum output current
The output common mode level is set by the reference pin
(REF), which has a -3dB bandwidth of 110MHz. Generally,
this pin is grounded but it can be tied to any voltage
reference.
• Low power, 12.5mA typical supply current
Both outputs (OUT+, OUT-) are short circuit protected to
withstand temporary overload condition.
• Twisted-pair drivers
• Pb-free plus anneal available (RoHS compliant)
Applications
• Differential line drivers
The EL5177 is available in the 10 Ld MSOP package and is
specified for operation over the full -40°C to +85°C
temperature range.
• VGA over twisted-pair
• ADSL/HDSL drivers
• Single ended to differential amplification
See also EL5174 (EL5177 in 8 Ld MSOP.)
• Transmission of analog signals in a noisy environment
Pinout
EL5177
(10 LD MSOP)
TOP VIEW
FBP 1
10 OUT+
IN+ 2
REF 3
9 VS+
-
IN- 4
FBN 5
8 VS+
7 EN
6 OUT-
Ordering Information
PART NUMBER
PART MARKING
TAPE & REEL
PACKAGE
PKG. DWG. #
EL5177IY
3
-
10 Ld MSOP (3.0mm)
MDP0043
EL5177IY-T7
3
7”
10 Ld MSOP (3.0mm)
MDP0043
EL5177IY-T13
3
13”
10 Ld MSOP (3.0mm)
MDP0043
EL5177IYZ (Note)
BAAKA
-
10 Ld MSOP (Pb-free) (3.0mm)
MDP0043
EL5177IYZ-T7 (Note)
BAAKA
7”
10 Ld MSOP (Pb-free) (3.0mm)
MDP0043
EL5177IYZ-T13 (Note) BAAKA
13”
10 Ld MSOP (Pb-free) (3.0mm)
MDP0043
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003-2005, 2007. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
EL5177
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage (VS+ to VS-) . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V
Maximum Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±60mA
VIN, VINB, VREF . . . . . . . . . . . VS- + 0.8V (min) to VS+ - 0.8V (max)
VIN - VINB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5
Recommended Operating Temperature . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, TA = +25°C, VIN = 0V, RLD = 1kΩ, RF = 0, RG = OPEN, CLD = 2.7pF, Unless Otherwise
Specified.
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
AC PERFORMANCE
BW
-3dB Bandwidth
AV = 1, CLD = 2.7pF
550
MHz
AV = 2, RF = 500, CLD = 2.7pF
130
MHz
AV = 10, RF = 500, CLD = 2.7pF
20
MHz
120
MHz
1100
V/µs
10
ns
BW
±0.1dB Bandwidth
AV = 1, CLD = 2.7pF
SR
Slew Rate
VOUT = 3VP-P, 20% to 80%
tSTL
Settling Time to 0.1%
VOUT = 2VP-P
tOVR
Output Overdrive Recovery Time
20
ns
GBWP
Gain Bandwidth Product
200
MHz
800
VREFBW (-3dB) VREF -3dB Bandwidth
AV =1, CLD = 2.7pF
110
MHz
VREFSR+
VREF Slew Rate - Rise
VOUT = 2VP-P, 20% to 80%
134
V/µs
VREFSR-
VREF Slew Rate - Fall
VOUT = 2VP-P, 20% to 80%
70
V/µs
VN
Input Voltage Noise
at 10kHz
21
nV/√Hz
IN
Input Current Noise
at 10kHz
2.7
pA/√Hz
HD2
Second Harmonic Distortion
VOUT = 2VP-P, 5MHz
-95
dBc
VOUT = 2VP-P, 20MHz
-94
dBc
VOUT = 2VP-P, 5MHz
-88
dBc
VOUT = 2VP-P, 20MHz
-87
dBc
HD3
Third Harmonic Distortion
dG
Differential Gain at 3.58MHz
RLD = 300Ω, AV = 2
0.06
%
dθ
Differential Phase at 3.58MHz
RLD = 300Ω, AV = 2
0.13
°
INPUT CHARACTERISTICS
VOS
Input Referred Offset Voltage
IIN
Input Bias Current (VIN+, VIN-)
IREF
Input Bias Current (VREF)
RIN
Differential Input Resistance
150
kΩ
CIN
Differential Input Capacitance
1
pF
DMIR
Differential Mode Input Range
CMIR+
Common Mode Positive Input Range at
VIN+, VIN-
3.4
V
CMIR-
Common Mode Negative Input Range at
VIN+, VIN-
-4.3
V
VREFIN+
Positive Reference Input Voltage Range
3.7
V
2
±1.4
±25
mV
-30
-14
-7
µA
0.5
2.3
4
µA
±2.1
VIN+ = VIN- = 0V
3.4
±2.3
±2.5
V
FN7344.4
May 10, 2007
EL5177
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, TA = +25°C, VIN = 0V, RLD = 1kΩ, RF = 0, RG = OPEN, CLD = 2.7pF, Unless Otherwise
Specified. (Continued)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
VREFIN-
Negative Reference Input Voltage Range VIN+ = VIN- = 0V
-3.3
-3
V
VREFOS
Output Offset Relative to VREF
±50
±100
mV
CMRR
Input Common Mode Rejection Ratio
VIN = ±2.5V
Gain
Gain Accuracy
65
78
dB
VIN = 1V
0.980
0.995
±3.6
±3.8
V
35
50
mA
1.010
V
OUTPUT CHARACTERISTICS
VOUT
Output Voltage Swing
RL = 500Ω to GND
IOUT+(Max)
Maximum Source Output Current
IOUT-(Max)
Maximum Sink Output Current
RL = 10Ω,
VIN+ = 1.1V,
VIN- = -1.1V,
VREF = 0
ROUT
Output Impedance
-40
-30
130
mA
mΩ
SUPPLY
VSUPPLY
Supply Operating Range
IS(ON)
Power Supply Current - Per Channel
IS(OFF)+
Positive Power Supply Current - Disabled EN pin tied to 4.8V
IS(OFF)-
Negative Power Supply Current Disabled
PSRR
Power Supply Rejection Ratio
VS+ to VS-
4.75
10
VS from ±4.5V to ±5.5V
11
V
12.5
14
mA
76
120
µA
-200
-120
µA
60
75
dB
ENABLE
tEN
Enable Time
130
ns
tDS
Disable Time
1.2
µs
VIH
EN Pin Voltage for Power-Up
VIL
EN Pin Voltage for Shut-Down
IIH-EN
EN Pin Input Current High
At VEN = 5V
IIL-EN
EN Pin Input Current Low
At VEN = 0V
VS+ 1.5
VS+ 0.5
V
40
-6
V
-2.5
50
µA
µA
Pin Descriptions
PIN NUMBER
PIN NAME
PIN DESCRIPTION
1
FBP
Non-inverting feedback input; resistor RF1 must be connected from this pin to VOUT
2
IN+
Non-inverting input
3
REF
Output common-mode control; the common-mode voltage of VOUT will follow the voltage on this pin
4
IN-
5
FBN
Inverting feedback input; resistor RF2 must be connected from this pin to VOUT
6
OUT-
Inverting output
Inverting input
7
EN
Enabled when this pin is floating or the applied voltage ≤ VS+ -1.5
8
VS+
Positive supply
9
VS-
Negative supply
10
OUT+
3
Non-inverting output
FN7344.4
May 10, 2007
EL5177
Connection Diagram
RF1
0Ω
VREF
RS3
50Ω
INP
1 FBP
RS1
RG
50Ω
OUT+ 10
OUT+
2 IN+
VS- 9
-5V
3 REF
VS+ 8
+5V
RLD
1kΩ
OPEN
INN-
4 IN-
RS2
50Ω
EN
EN 7
5 FBN
OUT-
OUT- 6
RF2
0Ω
Typical Performance Curves
AV = 1, RLD = 1kΩ, CLD = 2.7pF
3
3
NORMALIZED MAGNITUDE (dB)
4
2
MAGNITUDE (dB)
RLD = 1kΩ, CLD = 2.7pF
4
VOP-P = 200mV
1
0
-1
-2
VOP-P = 1V
-3
-4
-5
-6
1M
10M
100M
2
1
AV = 1
0
-1
-2
-3
AV = 10
-5
FREQUENCY (Hz)
4
CLD = 50pF
3
CLD = 23pF
CLD = 34pF
4
2
0
CLD = 9pF
-2
-4
2
MAGNITUDE (dB)
MAGNITUDE (dB)
1G
AV = 1, CLD = 2.7pF
6
CLD = 2.7pF
0
-1
-3
-8
-5
100M
FREQUENCY (Hz)
FIGURE 3. FREQUENCY RESPONSE vs CLD
4
1G
RLD = 500Ω
-2
-4
10M
RLD= 1kΩ
1
-6
-10
1M
100M
FIGURE 2. FREQUENCY RESPONSE FOR VARIOUS GAIN
AV = 1, RLD = 1kΩ
8
10M
FREQUENCY (Hz)
FIGURE 1. FREQUENCY RESPONSE
10
AV = 2
-4
-6
1M
1G
AV = 5
-6
1M
RLD= 200Ω
10M
100M
1G
FREQUENCY (Hz)
FIGURE 4. FREQUENCY RESPONSE vs RLD
FN7344.4
May 10, 2007
EL5177
Typical Performance Curves
(Continued)
AV = 2, RLD = 1kΩ, CLD = 2.7pF
AV = 2, CLD = 2.7pF, RF = 750Ω
10
10
9
9
RF = 1kΩ
8
7
MAGNITUDE (dB)
MAGNITUDE (dB)
8
6
5
RF = 500Ω
4
RF = 200Ω
3
7
5
1
1
100M
RLD = 200Ω
3
2
10M
RLD = 500Ω
4
2
0
1M
RLD = 1kΩ
6
0
1M
400M
10M
5
0
4
-10
3
-20
2
-30
1
0
-1
-2
-40
PSRR-
-50
-60
PSRR+
-70
-3
-80
-4
-5
100K
1M
10M
-90
10K
100M
1M
100K
100M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 8. PSRR vs FREQUENCY
FIGURE 7. FREQUENCY RESPONSE - VREF
1K
VOLTAGE NOISE (nV/√Hz),
CURRENT NOISE (pA/√Hz)
100
80
CMRR (dB)
400M
FIGURE 6. FREQUENCY RESPONSE vs RLD
PSRR (dB)
MAGNITUDE (dB)
FIGURE 5. FREQUENCY RESPONSE
60
40
20
0
-20
1K
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
10K
1M
100K
10M
100M
FREQUENCY (Hz)
FIGURE 9. CMRR vs FREQUENCY
5
1G
100
EN
10
IN
1
10
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
FIGURE 10. VOLTAGE AND CURRENT NOISE vs FREQUENCY
FN7344.4
May 10, 2007
EL5177
Typical Performance Curves
(Continued)
VS = ±5V, AV = 1, RLD = 1kΩ
100
-40
HD3 (f = 5MHz)
DISTORTION (dB)
IMPEDENCE (Ω)
-50
10
1
-60
HD3 (f = 20MHz)
-70
-80
-90
0.1
10K
100K
1M
-100
100M
10M
HD2 (f = 20MHz)
HD2 (f = 5MHz)
1
1.5
2
2.5
FREQUENCY (Hz)
3
3.5
4
4.5
5
VOP-P, DM (V)
FIGURE 11. OUTPUT IMPEDANCE vs FREQUENCY
FIGURE 12. HARMONIC DISTORTION vs DIFFERENTIAL
OUTPUT VOLTAGE
VS = ±5V, AV = 1, VOP-P, DM = 1V
VS = ±5V, AV = 2, RLD = 1kΩ
-50
-40
-55
-60
-60
HD3 (f = 20MHz)
-70
-80
HD3
-90
-100
(f
H
= 5M
Hz
HD2 (f = 20M
1
2
3
z)
-70
-75
-80
)
8
9
10
-100
100
-40
-50
HD3 (f = 20MHz)
DISTORTION (dB)
DISTORTION (dB)
HD3 (f = 5MHz)
-70
-75
-80
HD2 (f = 20MHz)
-90
-100
200
300
400
500
600 700
RLD (Ω)
800
900
FIGURE 15. HARMONIC DISTORTION vs RLD
6
z)
HD3
(f = 5
MH z
)
1000
(f = 2
0MH
z
)
M Hz)
300
400
500 600
RLD (Ω)
700
800
900 1000
VS = ±5V, RLD = 1kΩ, VOP-P, DM = 1V for AV = 1,
VOP-P, DM = 2V for AV = 2
HD3 (AV = 2)
-60
HD
-70
-80
-100
2 (A V
=2
A =
HD3 ( V
)
=1
(A V
2
HD
-90
HD2 (f = 5MHz)
-95
20M
H
(f = 5
-50
-60
-85
200
(f =
HD3
FIGURE 14. HARMONIC DISTORTION vs RLD
VS = ±5V, AV = 2, VOP-P, DM = 2V
-65
HD2
-95
HD2 (f = 5MHz)
FIGURE 13. HARMONIC DISTORTION vs DIFFERENTIAL
OUTPUT VOLTAGE
-55
HD 2
-85
-90
5
6
7
VOP-P, DM (V)
4
-65
DISTORTION (dB)
DISTORTION (dB)
-50
0
10
20
30
40
FREQUENCY (MHz)
50
)
1)
60
FIGURE 16. HARMONIC DISTORTION vs FREQUENCY
FN7344.4
May 10, 2007
EL5177
Typical Performance Curves
(Continued)
50mV/DIV
0.5V/DIV
10ns/DIV
10ns/DIV
FIGURE 17. SMALL SIGNAL TRANSIENT RESPONSE
FIGURE 18. LARGE SIGNAL TRANSIENT RESPONSE
M = 400ns, CH1 = 200mV/DIV, CH2 = 5V/DIV
M = 400ns, CH1 = 500mV/DIV, CH2 = 5V/DIV
CH1
CH1
CH2
CH2
400ns/DIV
400ns/DIV
FIGURE 20. DISABLED RESPONSE
FIGURE 19. ENABLED RESPONSE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
0.6
POWER DISSIPATION (W)
POWER DISSIPATION (W)
0.9
0.5
486mW
MSOP8/10
0.4
θJA=206°C/W
0.3
0.2
0.1
870mW
0.8
MSOP8/10
0.7
θJA=115°C/W
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
25
50
75 85
100
125
AMBIENT TEMPERATURE (°C)
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
7
0
25
50
75 85
100
125
AMBIENT TEMPERATURE (°C)
FIGURE 22. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FN7344.4
May 10, 2007
EL5177
Simplified Schematic
VS+
R3
R1
R4
R2
R7
IN+
IN-
FBP
R8
FBN
VB1
OUT+
RCD
REF
RCD
R9
VB2
CC
R10
OUTCC
R5
R6
VS-
Description of Operation and Application
Information
Product Description
The EL5177 is a wide bandwidth, low power and
single/differential ended to differential output amplifier. It can
be used as single/differential ended to differential converter.
The EL5177 is internally compensated for closed loop gain
of +1 of greater. Connected in gain of 1 and driving a 1kΩ
differential load, the EL5177 has a -3dB bandwidth of
550MHz. Driving a 200Ω differential load at gain of 2, the
bandwidth is about 130MHz. The EL5177 is available with a
power down feature to reduce the power while the amplifier
is disabled.
The gain setting for EL5177 is:
R F1 + R F2⎞
⎛
V ODM = ( V IN + – V IN - ) × ⎜ 1 + ----------------------------⎟
RG
⎝
⎠
2R F⎞
⎛
V ODM = ( V IN + – V IN - ) × ⎜ 1 + -----------⎟
RG ⎠
⎝
V OCM = V REF
Where:
RF1 = RF2 = RF
RF1
Input, Output, and Supply Voltage Range
The EL5177 has been designed to operate with a single
supply voltage of 5V to 10V or a split supplies with its total
voltage from 5V to 10V. The amplifiers have an input
common mode voltage range from -4.3V to 3.4V for ±5V
supply. The differential mode input range (DMIR) between
the two inputs is from -2.3V to +2.3V. The input voltage
range at the REF pin is from -3.3V to 3.7V. If the input
common mode or differential mode signal is outside the
above-specified ranges, it will cause the output signal
distorted.
The output of the EL5177 can swing from -3.8V to +3.8V at
1kΩ differential load at ±5V supply. As the load resistance
becomes lower, the output swing is reduced.
Differential and Common Mode Gain Settings
The voltage applied at REF pin can set the output common
mode voltage and the gain is one. The differential gain is set
by the RF and RG network.
8
FBP
VIN+
VINVREF
VO+
IN+
RG
INREF
VO-
FBN
RF2
FIGURE 23.
Choice of Feedback Resistor and Gain Bandwidth
Product
For applications that require a gain of +1, no feedback
resistor is required. Just short the OUT+ pin to FBP pin and
OUT- pin to FBN pin. For gains greater than +1, the
feedback resistor forms a pole with the parasitic capacitance
at the inverting input. As this pole becomes smaller, the
amplifier's phase margin is reduced. This causes ringing in
the time domain and peaking in the frequency domain.
Therefore, RF has some maximum value that should not be
exceeded for optimum performance. If a large value of RF
FN7344.4
May 10, 2007
EL5177
must be used, a small capacitor in the few Pico farad range
in parallel with RF can help to reduce the ringing and
peaking at the expense of reducing the bandwidth.
The bandwidth of the EL5177 depends on the load and the
feedback network. RF and RG appear in parallel with the
load for gains other than +1. As this combination gets
smaller, the bandwidth falls off. Consequently, RF also has a
minimum value that should not be exceeded for optimum
bandwidth performance. For gain of +1, RF = 0 is optimum.
For the gains other than +1, optimum response is obtained
with RF between 500Ω to 1kΩ.
The EL5177 has a gain bandwidth product of 200MHz for
RLD = 1kΩ. For gains ≥5, its bandwidth can be predicted by
the following equation:
Gain × BW = 200MHz
Driving Capacitive Loads and Cables
The EL5177 can drive 23pF differential capacitor in parallel
with 1kΩ differential load with less than 5dB of peaking at
gain of +1. If less peaking is desired in applications, a small
series resistor (usually between 5Ω to 50Ω) can be placed in
series with each output to eliminate most peaking. However,
this will reduce the gain slightly. If the gain setting is greater
than 1, the gain resistor RG can then be chosen to make up
for any gain loss which may be created by the additional
series resistor at the output.
When used as a cable driver, double termination is always
recommended for reflection-free performance. For those
applications, a back-termination series resistor at the
amplifier's output will isolate the amplifier from the cable and
allow extensive capacitive drive. However, other applications
may have high capacitive loads without a back-termination
resistor. Again, a small series resistor at the output can help
to reduce peaking.
maintained if the output current never exceeds ±40mA. This
limit is set by the design of the internal metal interconnect.
Power Dissipation
With the high output drive capability of the EL5177. It is
possible to exceed the 135°C absolute maximum junction
temperature under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if the load
conditions or package types need to be modified for the
amplifier to remain in the safe operating area.
The maximum power dissipation allowed in a package is
determined according to:
T JMAX – T AMAX
PD MAX = --------------------------------------------Θ JA
Where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
θJA = Thermal resistance of the package
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the load, or:
ΔV O
PD = V S × I SMAX + V S × -----------R LD
Where:
VS = Total supply voltage
ISMAX = Maximum quiescent supply current per channel
ΔVO = Maximum differential output voltage of the
application
RLD = Differential load resistance
Disable/Power-Down
The EL5177 can be disabled and placed its outputs in a high
impedance state. The turn off time is about 1.2µs and the
turn on time is about 130ns. When disabled, the amplifier's
supply current is reduced to 1.7µA for IS+ and 120µA for IStypically, thereby effectively eliminating the power
consumption. The amplifier's power down can be controlled
by standard CMOS signal levels at the EN pin. The applied
logic signal is relative to VS+ pin. Letting the EN pin float or
applying a signal that is less than 1.5V below VS+ will enable
the amplifier. The amplifier will be disabled when the signal
at EN pin is above VS+ - 0.5V.
Output Drive Capability
The EL5177 has internal short circuit protection. Its typical
short circuit current is ±40mA. If the output is shorted
indefinitely, the power dissipation could easily increase such
that the part will be destroyed. Maximum reliability is
9
ILOAD = Load current
By setting the two PDMAX equations equal to each other, we
can solve the output current and RLD to avoid the device
overheat.
Power Supply Bypassing and Printed Circuit
Board Layout
As with any high frequency device, a good printed circuit
board layout is necessary for optimum performance. Lead
lengths should be as sort as possible. The power supply pin
must be well bypassed to reduce the risk of oscillation. For
normal single supply operation, where the VS- pin is
connected to the ground plane, a single 4.7µF tantalum
capacitor in parallel with a 0.1µF ceramic capacitor from VS+
to GND will suffice. This same capacitor combination should
be placed at each supply pin to ground if split supplies are to
FN7344.4
May 10, 2007
EL5177
be used. In this case, the VS- pin becomes the negative
supply rail.
For good AC performance, parasitic capacitance should be
kept to minimum. Use of wire wound resistors should be
avoided because of their additional series inductance. Use
of sockets should also be avoided if possible. Sockets add
parasitic inductance and capacitance that can result in
compromised performance. Minimizing parasitic capacitance
at the amplifier's inverting input pin is very important. The
feedback resistor should be placed very close to the
inverting input pin. Strip line design techniques are
recommended for the signal traces.
Typical Applications
RF
FBP
50
TWISTED PAIR
IN+
IN+
RT
RG
IN-
EL5177
EL5175
50
REF
ZO = 100Ω
FBN
VO
INREF
RF
RFR
RGR
FIGURE 24. TWISTED PAIR CABLE RECEIVER
As the signal is transmitted through a cable, the high
frequency signal will be attenuated. One way to compensate
this loss is to boost the high frequency gain at the receiver
side.
RF
GAIN
(dB)
FBP
RT
75
VO+
IN+
RGC
RG
IN-
CL
REF
VO-
FBN
fL
RF
2R F
DC Gain = 1 + ----------RG
1
f L ≅ ------------------------2πR G C C
2R F
( HF )Gain = 1 + -------------------------R G || R GC
1
f H ≅ ----------------------------2πR GC C C
fH
FREQUENCY
FIGURE 25. TRANSMIT EQUALIZER
10
FN7344.4
May 10, 2007
EL5177
Mini SO Package Family (MSOP)
0.25 M C A B
D
MINI SO PACKAGE FAMILY
(N/2)+1
N
E
MDP0043
A
E1
MILLIMETERS
PIN #1
I.D.
1
B
(N/2)
e
H
C
SEATING
PLANE
0.10 C
N LEADS
SYMBOL
MSOP8
MSOP10
TOLERANCE
NOTES
A
1.10
1.10
Max.
-
A1
0.10
0.10
±0.05
-
A2
0.86
0.86
±0.09
-
b
0.33
0.23
+0.07/-0.08
-
c
0.18
0.18
±0.05
-
D
3.00
3.00
±0.10
1, 3
E
4.90
4.90
±0.15
-
E1
3.00
3.00
±0.10
2, 3
e
0.65
0.50
Basic
-
L
0.55
0.55
±0.15
-
L1
0.95
0.95
Basic
-
N
8
10
Reference
-
0.08 M C A B
b
Rev. D 2/07
NOTES:
1. Plastic or metal protrusions of 0.15mm maximum per side are not
included.
L1
2. Plastic interlead protrusions of 0.25mm maximum per side are
not included.
A
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
c
SEE DETAIL "X"
A2
GAUGE
PLANE
L
A1
0.25
3° ±3°
DETAIL X
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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11
FN7344.4
May 10, 2007
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