ZP DMP2225L-7 P-channel enhancement mode mosfet Datasheet

DMP2225L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON)
Package
-20V
110mΩ @ VGS = -4.5V
225mΩ @ VGS = -2.5V
SOT23
ID
TA = +25°C
-2.6A
-2.0A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
•
Low On-Resistance:
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
•
Case: SOT23
•
Applications
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
General Purpose Interfacing Switch
•
Power Management Functions
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Top View
Source
Equivalent Circuit
Top View
Ordering Information
Part Number
DMP2225L-7
DMP2225LQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT-23
SOT-23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
YM
2P2
Date Code Key
Year
Code
Month
Code
[email protected]
2008
V
Jan
1
2009
W
Feb
2
Mar
3
2P2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
2010
X
Apr
4
2011
Y
May
5
Jun
6
www.zpsemi.com
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
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DMP2225L
P-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Stead
State
TA = +25°C
TA = +70°C
Units
V
V
IDM
Value
-20
±12
-2.6
-2
8
Symbol
PD
RθJA
TJ, TSTG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
ID
Pulsed Drain Current (Note 6)
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
—
—
—
—
—
—
-800
—
—
±80
V
nA
nA
On-State Drain Current
ID(ON)
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS
-20
—
-6
-3
—
VGS(th)
-0.45
—
-1.25
V
RDS (ON)
—
80
165
110
225
mΩ
|Yfs|
VSD
—
—
4
—
—
-1.26
S
V
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
—
—
—
—
—
—
—
250
88
58
12
4.3
0.9
2.1
—
—
—
16
5.3
—
—
pF
pF
pF
Ω
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes:
A
nC
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VDS ≤ -5V, VGS = -4.5V
VDS ≤ -5V, VGS = -2.5V
VGS = ±12V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -2.6A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.6A
VGS = 0V, IS = -2.6A
VDS = -10V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = -4.5V, VDS = -10V,
ID = -2.7A
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
[email protected]
www.zpsemi.com
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