DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching • Low On-Resistance: • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data performance, making it ideal for high efficiency power management applications. • Case: SOT23 • Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • General Purpose Interfacing Switch • Power Management Functions • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Top View Source Equivalent Circuit Top View Ordering Information Part Number DMP2225L-7 DMP2225LQ-7 Notes: Qualification Commercial Automotive Case SOT-23 SOT-23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information YM 2P2 Date Code Key Year Code Month Code [email protected] 2008 V Jan 1 2009 W Feb 2 Mar 3 2P2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 www.zpsemi.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D 1 of 2 DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Stead State TA = +25°C TA = +70°C Units V V IDM Value -20 ±12 -2.6 -2 8 Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Units W °C/W °C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS — — — — — — -800 — — ±80 V nA nA On-State Drain Current ID(ON) Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS -20 — -6 -3 — VGS(th) -0.45 — -1.25 V RDS (ON) — 80 165 110 225 mΩ |Yfs| VSD — — 4 — — -1.26 S V Ciss Coss Crss Rg Qg Qgs Qgd — — — — — — — 250 88 58 12 4.3 0.9 2.1 — — — 16 5.3 — — pF pF pF Ω Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes: A nC Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VDS ≤ -5V, VGS = -4.5V VDS ≤ -5V, VGS = -2.5V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -2.6A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.6A VGS = 0V, IS = -2.6A VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = -4.5V, VDS = -10V, ID = -2.7A 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. [email protected] www.zpsemi.com 2 of 2