Production specification BAV16W Silicon Epitaxial Planar Diode FEATURES Pb Fast Switching Speed:trr=4ns(Typ) Surface Mount Package Ideally Suited For Lead-free Automatic Insertion For General Purpose Switching Applications High Conductance Available in Lead Free Version APPLICATIONS SOD-123 Surface mount fast switching diode ORDERING INFORMATION Type No. Marking Package Code BAV16W T6 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Average Rectified Output Current Io 150 mA Non-Repetitive Peak Forward Surge Current @t=1.0 μs @t=1.0 s IFSM 2.0 1.0 A Power Dissipation Pd 350 mW Thermal Resistance Junction to Ambient Air RθJA 375 ℃/W Operating and Storage Temperature Rage Tj,TSTG -65 to +150 ℃ A009 Rev.A www.gmesemi.com 1 Production specification BAV16W Silicon Epitaxial Planar Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 75 - V IR=1.0μA 0.715 0.855 1.0 1.25 V IF=1mA IF=10mA IF=50mA IF=150mA Forward Voltage VF Reverse Current IR - 1.0 25 μA nA VR=75V VR=20V Capacitance between terminals CT - 2.0 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 4.0 ns IF=IR=10mA, Irr=0.1×IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified A009 Rev.A www.gmesemi.com 2 Production specification BAV16W Silicon Epitaxial Planar Diode PACKAGE OUTLINE Plastic surface mounted package SOD-123 K SOD-123 B C A D H E J Dim Min Max A 1.45 1.75 B 2.55 2.85 C 1 1.3 D 0.5 0.6 E 0.25 0.45 H 0.02 0.10 J 0.05 0.15 K 3.55 3.85 All Dimensions in mm SOLDERING FOOTPRINT 0.91 1.22 2.36 4.19 Unit：mm PACKAGE INFORMATION Device Package Shipping BAV16W SOD-123 3000/Tape&Reel A009 Rev.A www.gmesemi.com 3