BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 Ω) BD250B Collector-emitter voltage (IC = -30 mA) VCER -115 -45 V CEO Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. -60 V -80 -100 BD250C Continuous collector current V -90 BD250C BD250B Emitter-base voltage -70 BD250 BD250A UNIT -55 BD250 BD250A VALUE VEBO -5 V IC -25 A ICM -40 A IB -5 A Ptot 125 W Ptot 3 W ½LIC2 90 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) BD250 -45 BD250A -60 BD250B -80 BD250C -100 TYP MAX V VCE = -55 V VBE = 0 BD250 -0.7 Collector-emitter VCE = -70 V VBE = 0 BD250A -0.7 cut-off current VCE = -90 V VBE = 0 BD250B -0.7 VCE = -115 V VBE = 0 BD250C -0.7 Collector cut-off VCE = -30 V IB = 0 BD250/250A -1 current VCE = -60 V IB = 0 BD250B/250C -1 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio VCE = -4 V IC = -1.5 A -4 V IC = -15 A VCE = -4 V IC = -25 A Collector-emitter IB = -1.5 A IC = -15 A saturation voltage IB = -5 A IC = -25 A Base-emitter VCE = -4 V IC = -15 A voltage VCE = -4 V IC = -25 A Small signal forward current transfer ratio Small signal forward current transfer ratio mA mA -1 VCE = UNIT mA 25 (see Notes 5 and 6) 10 5 -1.8 (see Notes 5 and 6) -4 -2 (see Notes 5 and 6) V -4 VCE = -10 V IC = - 1A f = 1 kHz 25 VCE = -10 V IC = -1 A f = 1 MHz 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1 °C/W RθJA Junction to free air thermal resistance 42 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -5 A IB(on) = -0.5 A IB(off) = 0.5 A 0.2 µs toff Turn-off time VBE(off) = 5 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.4 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS636AD VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·1 -1·0 -10 -100 TCS636AB -10 -1·0 -0·1 -0·01 -0·001 -0·01 IC - Collector Current - A -0·1 -1·0 -10 -25 A -20 A -15 A -10 A -100 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·8 VBE - Base-Emitter Voltage - V IC = IC = IC = IC = IC = -300 mA IC = -1 A IC = -3 A TCS636AC VCE = -4 V TC = 25°C -1·6 -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 -100 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS636AB tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD250 BD250A BD250B BD250C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MDXXAW 5