BCR16PM-12LD Triac Medium Power Use REJ03G1562-0100 Rev.1.00 Jul 06, 2007 Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Type IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 50 mA Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G1562-0100 Page 1 of 7 Rev.1.00 Jul 06, 2007 Symbol Voltage class 12 Unit VDRM VDSM 600 700 V V BCR16PM-12LD Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 96 A I2 t 38 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 1500 W W V A °C °C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 60°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.75 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 50 50 50 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 4.1 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 — — V/µs Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 8 A/ms 3. Peak off-state voltage VD = 400 V REJ03G1562-0100 Page 2 of 7 Rev.1.00 Jul 06, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12LD Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 10 7 Tj = 25°C 5 3 2 120 Surge On-State Current (A) On-State Current (A) 2 101 7 5 3 2 0 10 7 5 3 2 10 –1 60 40 20 2 3 5 7 10 1 2 3 5 7 10 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 102 7 5 3 2 VGM = 10 V PGM = 5 W 1 10 7 5 3 2 VGT = 1.5 V PG(AV) = 0.5 W IGM = 2 A 0 10 7 5 3 2 IFGT I IRGT I IRGT III VGD = 0.2 V 10–1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 103 7 5 2 Typical Example IRGTIII 3 2 102 7 5 IFGTI 3 2 IRGTI 101 –60 –40–20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 102 7 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100120140160 Junction Temperature (°C) REJ03G1562-0100 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) On-State Voltage (V) Rev.1.00 Jul 06, 2007 Transient Thermal Impedance (°C/W) Gate Voltage (V) 80 0 0 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 100 10 5.0 2 2 3 5 7103 2 3 5 7 104 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Conduction Time (Cycles at 60 Hz) BCR16PM-12LD 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 On-State Power Dissipation (W) 20 360° Conduction Resistive, 15 inductive loads 10 5 0 0 5 2 4 6 8 10 12 14 16 18 20 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 160 Ambient Temperature (°C) Case Temperature (°C) 25 No Fins 160 120 120 × 120 × t2.3 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads 0 0 8 10 12 14 16 18 20 All fins are black painted aluminum and greased 140 Natural convection 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 3 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) REJ03G1562-0100 Page 4 of 7 Rev.1.00 Jul 06, 2007 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example –60 –40–20 0 20 40 60 80 100120140160 Junction Temperature (°C) BCR16PM-12LD 103 7 5 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120140 160 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 T2+, G+ 5 Typical Example 3 2 10 T2–, G– Typical Example 0 –60 –40 –20 0 20 40 60 80 100 120 140160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100120 140160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 1 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C) 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) REJ03G1562-0100 Page 5 of 7 Rev.1.00 Jul 06, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant 1 10 7 5 I Quadrant Minimum Characteristics Value 3 2 Typical Example 0 Tj = 125°C, IT = 4 A τ = 500 µs, VD = 200 V f = 3 Hz 10 7 0 10 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR16PM-12LD Gate Trigger Current vs. Gate Current Pulse Width 7 5 Typical Example Tj = 150°C 3 IT = 4 A 2 τ = 500 µs VD = 200 V 1 f = 3 Hz Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj = 150°C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant 10 7 5 I Quadrant 3 2 100 7 0 10 5 7 101 2 3 2 3 5 7 102 Gate Trigger Characteristics Test Circuits 6Ω A 6V 330 Ω V Test Procedure I V Test Procedure II 6Ω A 6V V 330 Ω Test Procedure III REJ03G1562-0100 Page 6 of 7 A 6V Rev.1.00 Jul 06, 2007 Typical Example IRGT III IRGT I 3 2 IFGT I 102 7 5 3 2 101 0 10 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) Rate of Decay of On-State Commutating Current (A/ms) 6Ω 103 7 5 330 Ω BCR16PM-12LD Package Dimensions Package Name TO-220F JEITA Package Code SC-67 Previous Code RENESAS Code PRSS0003AA-A MASS[Typ.] 2.0g Unit: mm 10.5Max 2.8 17 8.5 5.0 1.2 5.2 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 0.5 2.6 4.5 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G1562-0100 Page 7 of 7 Rev.1.00 Jul 06, 2007 Standard order code example BCR16PM-12LD BCR16PM-12LD -A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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